Role of Carbon on the electrical, optical and structural properties of GaN

碳对 GaN 电学、光学和结构特性的作用

• 批准号: 348524434
• 负责人: Professor Dr.-Ing. Thomas Mikolajick
• 金额: --
• 依托单位: Institut für Halbleiter- und Mikrosystemtechnik (IHM)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/348524434?language=en
• 关键词: Role; Carbon; electrical; optical; structural

Intense interest and research over the past 3 years in gallium nitride (GaN) doped with carbon points at the fact that carbon will not act as a practical acceptor in GaN. Independent experiments concluded on a deep acceptor state ~ 0.7 – 1 eV above the valence band and with this, room temperature p-type conductivity of carbon-doped GaN seems illusive. Our recent research on C-doped GaN grown by molecular beam epitaxy (MBE) supports these aspects, as we could not identify the acceptor character spectroscopically or electrically, as e.g. possible for the case of GaN doped with magnesium. The exact microscopic character of the deep defect formed by C in GaN remains of big interest, since it presents a possibility to compensate residual n-type conductivity. MBE-grown ultra-pure GaN represents a perfect reference system, as it allows for the comparison between this reference and material with intentionally introduced impurities. Our recent results point at the formation of structural defects during the growth of carbon-doped GaN. This aspect will be further investigated by referring spectroscopic photoluminescence signatures in the energy range between 3.0 and 3.4 eV to the carbon doping level. Further it was realized that carbon is not exclusively related to the appearance of a yellow luminescence band around 2.2 eV, which will be studied in further detail by co-doping carbon-containing material. A last pillar of the proposed work are investigations to link carbon concentrations in AlGaN/GaN HEMT layer stacks with their electrical properties and operation modes.

在过去的3年里，人们对掺杂碳的氮化镓（GaN）的浓厚兴趣和研究表明，碳在GaN中不会充当实际的受体。独立的实验得出结论，深受主状态~ 0.7 - 1 eV以上的价带，并与此，室温p型导电性的碳掺杂的GaN似乎虚幻。我们最近对通过分子束外延（MBE）生长的C掺杂GaN的研究支持这些方面，因为我们不能在光谱或电学上识别受主特征，例如，对于掺杂镁的GaN的情况是可能的。GaN中由C形成的深缺陷的精确微观特征仍然具有很大的兴趣，因为它提供了补偿残余n型导电性的可能性。MBE生长的超纯GaN代表了一个完美的参考系统，因为它允许在该参考和有意引入杂质的材料之间进行比较。我们最近的研究结果指出，在碳掺杂GaN的生长过程中形成的结构缺陷。将通过将3.0至3.4 eV能量范围内的光谱光致发光特征与碳掺杂水平进行比较来进一步研究这一方面。此外，认识到碳并不仅仅与2.2eV附近的黄色发光带的出现有关，这将通过共掺杂含碳材料来进一步详细研究。拟议工作的最后一个支柱是研究AlGaN/GaN HEMT层堆叠中的碳浓度与其电学特性和操作模式之间的联系。

项目成果

Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

磁光确认在块状 GaN 上生长的 GaN/AlGaN 2DEG 中的朗道能级分裂

• DOI: 10.1116/1.5088927
• 发表时间: 2019
• 期刊: Journal of Vacuum Science & Technology B
• 影响因子: 1.4
• 作者: S. Schmult;V.V. Solovyev;S. Wirth;A. Großer;T. Mikolajick;I.V. Kukushkin
• 通讯作者: I.V. Kukushkin

Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN

在块状 GaN 上生长的光诱导 GaN/AlGaN 2DEG 的量子和传输寿命

• DOI: 10.1116/1.5145198
• 发表时间: 2020
• 期刊: Journal of Vacuum Science & Technology B
• 影响因子: 1.4
• 作者: Luisa Krückeberg;Steffen Wirth;Victor Solovyev;Andreas Großer;Igor Kukushkin;Thomas Mikolajick;Stefan Schmult
• 通讯作者: Stefan Schmult

Carbon-doped MBE GaN: Spectroscopic insights

• DOI: 10.1016/j.jcrysgro.2019.02.041
• 发表时间: 2019-05
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: D. Pohl;V. V. Solovyev-V.;S. Röher;J. Gärtner;I. Kukushkin;T. Mikolajick;A. Großer;S. Schmult

Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

由超纯 GaN/AlGaN 异质结构制成的横向场效应晶体管的常关操作

• DOI: 10.1002/pssa.201900732
• 发表时间: 2020
• 期刊: physica status solidi (a)
• 作者: S. Schmult;S. Wirth;V.V. Solovyev;R. Hentschel;A. Wachowiak;T. Scheinert;A. Großer;I.V. Kukushkin;T. Mikolajick
• 通讯作者: T. Mikolajick

Light-tunable 2D subband population in a GaN/AlGaN heterostructure

GaN/AlGaN 异质结构中的光可调 2D 子带群

• DOI: 10.1063/5.0027010
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: V.V. Solovyev;S. Schmult;L. Krückeberg;A. Großer;T. Mikolajick;I.V. Kukushkin
• 通讯作者: I.V. Kukushkin