In situ resistance and magnetoresistance experiments on spin orbit torque systems

自旋轨道扭矩系统的原位电阻和磁阻实验

• 批准号: 366210174
• 负责人: Professor Dr. Günter Reiss
• 金额: --
• 依托单位: Arbeitsgruppe Dünne Schichten und Physik der Nanostrukturen
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/366210174?language=en
• 关键词: situ; resistance; magnetoresistance; experiments; spin

In this project, we want on the one hand to establish in-situ measurements of the electric resistance, the magnetoresistance and the anomalous Hall effect in an evaporation- and a sputter-chamber. The measurements will be done during the growth of single layer films and of multilayers that are known as spin orbit torque systems. The spin orbit torque uses the accumulation of spins driven by, e.g., the spin Hall effect to switch the magnetisation of non-symmetric multilayers made from non-magnets and ferro- or ferrimagnets. This technique is extremely promising for future electronic device. In addition, it is of basic interest because the systems used show a locking between the momentum of the charge carriers and their spin.On the other hand, we want to evaluate in detail the spin Hall angle and the spin orbit torque switching for the samples that have been characterised by the in-situ measurements. From these in-situ experiments, the resistivities of the individual layers can be determined as first quantity. Moreover, it is possible to analyse the resistance increase when a metal A is covered by a metal B and to draw conclusions on the strength of the scattering of the charge carriers at the interface between A and B.These informations are at present not available for the interpretation of experiments on spin orbit torque. The resistivities of the individual layers are often taken from data of bulk materials, and large errors are commonly accepted. Moreover, the relation between the size of the spin Hall angle and the scattering of the charge carriers at the interfaces is an open and very important question. We hope, that our research in this project can contribute to the following scientific questions:- Which current flows in the individual layers?- How strong is the scattering of the electrons at the interfaces?- How do the effects (spin Hall, spin orbit torque, anomalous Hall effect, SMR, USMR, ..) depend on the thicknesses of the individual layers and the quality of the interfaces?- Is there a correlation between the strength of the spin orbit torque and the interface scattering of the charge carriers?

在这个项目中，我们希望一方面建立电阻，磁阻和异常霍尔效应在蒸发室和蒸发室的原位测量。测量将在单层薄膜和多层薄膜的生长过程中进行，这些薄膜被称为自旋轨道扭矩系统。自旋轨道转矩使用由例如，自旋霍尔效应来切换由非磁体和铁磁体或亚铁磁体制成的非对称多层膜的磁化强度。这种技术在未来的电子设备中是非常有前途的。此外，它是基本的兴趣，因为所使用的系统显示的电荷载流子的动量和他们的spin.On另一方面，我们要详细评估的自旋霍尔角和自旋轨道转矩切换的样品，其特征在于通过原位测量之间的锁定。从这些原位实验中，可以确定各个层的折射率作为第一量。此外，当金属A被金属B覆盖时，可以分析电阻的增加，并得出关于A和B之间界面处的电荷载流子散射强度的结论。这些信息目前还不能用于解释自旋轨道力矩的实验。各个层的折射率通常取自散装材料的数据，并且通常可以接受较大的误差。此外，自旋霍尔角的大小与载流子在界面处的散射之间的关系是一个开放的和非常重要的问题。我们希望，我们在这个项目中的研究可以有助于以下科学问题： 哪种电流流过各个层？ 电子在界面处的散射有多强？ 如何影响（自旋霍尔，自旋轨道扭矩，反常霍尔效应，SMR，USMR，.）取决于各层的厚度和界面的质量？ 自旋轨道力矩的强度和载流子的界面散射之间是否存在相关性？

项目成果

Silicon-compatible antiferromagnets switch on

• DOI: 10.1038/s41928-020-0373-4
• 发表时间: 2020-02
• 期刊: Nature Electronics
• 影响因子: 34.3
• 作者: G. Reiss;M. Meinert

Element-Specific Detection of Sub-Nanosecond Spin-Transfer Torque in a Nanomagnet Ensemble.

• DOI: 10.1021/acs.nanolett.0c01868
• 发表时间: 2020-05
• 期刊: Nano letters
• 影响因子: 10.8
• 作者: S. Emori;C. Klewe;J. Schmalhorst;Jan Krieft;P. Shafer;Youngmin Lim;David A. Smith;A. Sapkota;A. Srivastava;C. Mewes;Zijian Jiang;B. Khodadadi;Hesham Elmkharram;J. Heremans;E. Arenholz;Günter Reiss;T. Mewes

Resistive contribution in electrical-switching experiments with antiferromagnets

• DOI: 10.1103/physrevresearch.2.033077
• 发表时间: 2020-07-15
• 期刊: PHYSICAL REVIEW RESEARCH
• 影响因子: 4.2
• 作者: Matalla-Wagner, Tristan;Schmalhorst, Jan-Michael;Meinert, Markus
• 通讯作者: Meinert, Markus