课题基金 / 基金详情

Development of High Voltage Field Ion Microscope for the Studies of Surface, Interface, and Substrate of Materials

Development of High Voltage Field Ion Microscope for the Studies of Surface, Interface, and Substrate of Materials
开发用于材料表面、界面和基底研究的高压场离子显微镜
批准号:
60850031
负责人:
UMENO Masataka
金额:
$3.84万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1985
资助国家:
日本
项目状态:
已结题
起止时间:
1985 至 1986

项目摘要

项目成果

UMENO Masataka的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
A high voltage field ion microscope (HV-FIM) has been developed for technological advances of observing atomic structures of surface, interface, and substrate of materials. As is well known, the applications of field io <eta> microscopy have been limited to fine refractory metal wires primarily due to the requirement of a high electric field of 10GV/m. One would require the design of a high voltage vacuum feedthrough in order to observe atomic arrangements of tip-specimen with a large radius of curvature. Main components of the present HV-FIM are ultra-high vacuum chamber of <10^(-7)> Pa, liquid <N_2> cooled cold finger, and the high voltage devices with a maximum voltage of 60kV. An equipment of the specimen exchange chamber enabled efficient observations of a specimen without leaking the whole vacuum system to an ordinary atmosphere.HV-FIM observations boron-coated tungsten were carried out. By heating the coated specimen at 1200 K, the formation of <W_2B_5> was identified, and this coincides with the existence of tungsten borides at the core of boron fibers. An observation of the atomic structure of bulk tungsten, instead of fine tungsten wire, was successfully made using the HV-FIM, and He-ion image of W-atoms was obtained with a high resolution of 0.4nm. The above results obtained from the tip having a large radius of curvature may not be possible without a use of HV-FIM.
期刊论文(30)
专著(0)
科研奖励(0)
会议论文
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
M.Tagawa;S.Koike;N.Inoue;N.Ohmae;M.Umeno: Proc.34th Field Emission Symp.,Osaka,. (1987)
M.Takawa;S.Koike;N.Inoue;N.Ohmae;M.Umeno:Proc.34th Field Emission Symp.,大阪,。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
J.Mater.Sci.21-3. (1986)
J.Mater.Sci.21-3。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
15
    Measurements of the strain in strained Si wafers by X-ray diffraction methods
    • 批准号:
      20560017
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2008
    • 负责人:
      UMENO Masataka
    • 依托单位:
    X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces
    • 批准号:
      11450014
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.05万
    • 财政年份:
      1999
    • 负责人:
      UMENO Masataka
    • 依托单位:
    Development of room-temperature oxidation method of Si due to pulsed hyperthermal atomic oxygen beam
    • 批准号:
      09555004
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $6.46万
    • 财政年份:
      1997
    • 负责人:
      UMENO Masataka
    • 依托单位:
    Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction
    • 批准号:
      09450016
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.36万
    • 财政年份:
      1997
    • 负责人:
      UMENO Masataka
    • 依托单位:
    海外基金