Development of High Voltage Field Ion Microscope for the Studies of Surface, Interface, and Substrate of Materials

开发用于材料表面、界面和基底研究的高压场离子显微镜

• 批准号: 60850031
• 负责人: UMENO Masataka
• 金额: $ 3.84万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60850031/
• 关键词: Surface; Interface; Substrate; Atomic Structure; 高電圧電界イオン顕微鏡; 電界イオン顕微鏡; 高電圧印加方式

A high voltage field ion microscope (HV-FIM) has been developed for technological advances of observing atomic structures of surface, interface, and substrate of materials. As is well known, the applications of field io <eta> microscopy have been limited to fine refractory metal wires primarily due to the requirement of a high electric field of 10GV/m. One would require the design of a high voltage vacuum feedthrough in order to observe atomic arrangements of tip-specimen with a large radius of curvature. Main components of the present HV-FIM are ultra-high vacuum chamber of <10^(-7)> Pa, liquid <N_2> cooled cold finger, and the high voltage devices with a maximum voltage of 60kV. An equipment of the specimen exchange chamber enabled efficient observations of a specimen without leaking the whole vacuum system to an ordinary atmosphere.HV-FIM observations boron-coated tungsten were carried out. By heating the coated specimen at 1200 K, the formation of <W_2B_5> was identified, and this coincides with the existence of tungsten borides at the core of boron fibers. An observation of the atomic structure of bulk tungsten, instead of fine tungsten wire, was successfully made using the HV-FIM, and He-ion image of W-atoms was obtained with a high resolution of 0.4nm. The above results obtained from the tip having a large radius of curvature may not be possible without a use of HV-FIM.

高压场离子显微镜（HV-1000）是为观察材料表面、界面和基体的原子结构而研制的。众所周知，场致显微镜的应用<eta>主要由于需要10 GV/m的高电场而被限制于细的难熔金属线。为了观察具有大曲率半径的针尖样品的原子排列，需要设计高压真空馈通。该装置的主要组成部分是&lt;10^（-7）&gt; Pa的超高真空室、液体<N_2>冷却的冷指和最高电压为60 kV的高压装置。样品交换室的设备可以有效地观察样品，而不会将整个真空系统泄漏到普通大气中。对硼涂层钨进行了HV-XRD观察。通过在1200 K下加热涂层试样，确定了形成<W_2B_5>，这与硼纤维芯部存在硼化钨相一致。用高压电子显微镜成功地代替细钨丝观察了钨的原子结构，获得了高分辨的钨原子He离子像，分辨率达0.4nm。如果不使用HV-1000，从具有大曲率半径的尖端获得的上述结果可能是不可能的。

项目成果

M. Tagawa, (S. Takenobu, N. Ohmae & M. Umeno): "Electric Field Disribution of Emitter Surfaces" Appl. Phys. Lett.50. (1987)

M. Takawa（S. Takenobu，N. Ohmae）

M.Tagawa;S.Koike;N.Inoue;N.Ohmae;M.Umeno: Proc.34th Field Emission Symp.,Osaka,. (1987)

M.Takawa;S.Koike;N.Inoue;N.Ohmae;M.Umeno：Proc.34th Field Emission Symp.，大阪，。

A. Nakamura, (S. Koike, M. Tagawa, N. Ohmae & M. Umeno): "FIM Investigations of Orientation Relations at the Heat Treated B/W Interfaces" Proc. 14th Congr. and General Assembly of Intl. Union of Crystallography, Perth, Australia, August, 1987. (1987)

A. Nakamura, (S. Koike, M. Takawa, N. Ohmae

J.Mater.Sci.21-3. (1986)

J.Mater.Sci.21-3。

Phil.Mag.53. (1986)

Phil.Mag.53。