Development of quantitative characterization method of microstructures by X-ray scattering

X射线散射微观结构定量表征方法的发展

• 批准号: 07555337
• 负责人: UMENO Masataka
• 金额: $ 0.7万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555337/
• 关键词: X-ray diffraction; CTR scattering; microdevice; microstructure; X線回折

High-resolution X-ray diffraction from a Si (001) grating surface using a conventional laboratory X-ray source reveals resolution-limited grating interference peaks around each Bragg reflection. As the results it was found that the positions and the intensities of the satellite peaks provide us with structural information such as the period and the width, as well as the roughness of the side walls of the gratings in a nanometer scale.The gratings were made on a Si (001) surface, of which width, height, period, and length were 0.8mum, 10mum, 4.5mum, and 6.5mm, respectively. The number of the gratings is 47. The X-ray diffraction measurements were performed with a Ge (220) channel-cut monochrometor (CuKalpha_1) and a Ge (220) channel-cut analyzer in front of the detector. The satellite peaks were observed around the 113 and 111 Bragg points by using the automatic program for the diffractometer. Two diffraction geometries, high- and low-angle incidence geometries, were selected for the 113 Bragg point. In the high-angle geometry the satellite peaks were not observed, while the interference peaks of the -0.8mum separation were measured in the low-angle geometry. The actual width of the gratings can be estimated from the positions of the peaks. The intensity decay of the peaks give us the information for the roughness of the side walls of the gratings. Furthermore, the fine fringes for the period of the gratings were observed on the peaks around the 111 Bragg point.

使用常规实验室X射线源从Si（001）光栅表面的高分辨率X射线衍射揭示了每个布拉格反射周围的分辨率受限的光栅干涉峰。结果表明，卫星峰的位置和强度提供了纳米尺度上光栅的周期、宽度以及侧壁粗糙度等结构信息，光栅制作在Si（001）表面上，其宽度、高度、周期和长度分别为0.8 μ m、10 μ m、4.5 μ m和6.5mm。光栅的数量为47。X射线衍射测量用Ge（220）沟道切割单色仪（CuKalpha_1）和位于检测器前面的Ge（220）沟道切割分析仪进行。用衍射仪自动程序在113和111布喇格点附近观察到卫星峰。两个衍射几何形状，高和低角度入射的几何形状，被选择为113布拉格点。在高角度的几何形状的卫星峰没有观察到，而-0.8mum分离的干扰峰在低角度的几何形状进行了测量。光栅的实际宽度可以从峰的位置估计。峰值的强度衰减给我们提供了光栅侧壁粗糙度的信息。此外，在111布拉格点周围的峰上观察到了光栅周期的精细条纹。

项目成果

Takayoshi Shimura: "X-ray diffraction evidence for crystalline SiO_2 in thermal oxide layers on Si substrate" The Physics and Chemistry of Si-SiO_2 Interface 3. 96-1. 456-467 (1996)

Takayoshi Shimura：“Si 衬底上热氧化物层中晶体 SiO_2 的 X 射线衍射证据”Si-SiO_2 界面的物理和化学 3. 96-1。

Takayoshi Shimura: "X-ray scattering from crystalline SiO_2 in the thermal oxide layers on viccinal Si (111) surfaces" Acta Crystallographica. A52. C465-C465 (1996)

Takayoshi Shimura：“邻近 Si (111) 表面热氧化层中晶体 SiO_2 的 X 射线散射”《晶体学报》。

T.Shimura, I.Takahashi, J.Harada, and M.Umeno: "X-ray diffraction evidence for crystalline SiO_2 in thermal oxide layrs on Si substrate" The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface 3. 96-1. 456-467 (1996)

T.Shimura、I.Takahashi、J.Harada 和 M.Umeno：“Si 基板上热氧化物层中结晶 SiO_2 的 X 射线衍射证据”The Chemistry of SiO_2 and the Si-SiO_2 Interface 3. 96-

Takayoshi Shimura: "X-RAY DIFFRACTION EVIDENCE FOR CRYSTALLINE SiO_2 IN THERMAL OXIDE LAYERS ON Si SUBSTRATES" The Physics and Chemistry of Si-SiO_2 Interface 3. (in press).

Takayoshi Shimura：“Si 基板上热氧化层中晶体 SiO_2 的 X 射线衍射证据”Si-SiO_2 界面的物理和化学 3。（出版中）。

Takayoshi Shimura: "X-ray diffraction evidence for the existence of epitaxial microcrystalites in thermally oxidized SiO_2 thin films on Si (111) surfaces" J. Cryst. Growth. 166. 786-791 (1996)

Takayoshi Shimura：“X 射线衍射证明 Si (111) 表面热氧化 SiO_2 薄膜中存在外延微晶” J. Cryst。