Development of quantitative characterization method of microstructures by X-ray scattering
Development of quantitative characterization method of microstructures by X-ray scattering
批准号:
07555337
负责人:
UMENO Masataka
金额:
$0.7万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
High-resolution X-ray diffraction from a Si (001) grating surface using a conventional laboratory X-ray source reveals resolution-limited grating interference peaks around each Bragg reflection. As the results it was found that the positions and the intensities of the satellite peaks provide us with structural information such as the period and the width, as well as the roughness of the side walls of the gratings in a nanometer scale.The gratings were made on a Si (001) surface, of which width, height, period, and length were 0.8mum, 10mum, 4.5mum, and 6.5mm, respectively. The number of the gratings is 47. The X-ray diffraction measurements were performed with a Ge (220) channel-cut monochrometor (CuKalpha_1) and a Ge (220) channel-cut analyzer in front of the detector. The satellite peaks were observed around the 113 and 111 Bragg points by using the automatic program for the diffractometer. Two diffraction geometries, high- and low-angle incidence geometries, were selected for the 113 Bragg point. In the high-angle geometry the satellite peaks were not observed, while the interference peaks of the -0.8mum separation were measured in the low-angle geometry. The actual width of the gratings can be estimated from the positions of the peaks. The intensity decay of the peaks give us the information for the roughness of the side walls of the gratings. Furthermore, the fine fringes for the period of the gratings were observed on the peaks around the 111 Bragg point.
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Takayoshi Shimura: "X-ray diffraction evidence for crystalline SiO_2 in thermal oxide layers on Si substrate" The Physics and Chemistry of Si-SiO_2 Interface 3. 96-1. 456-467 (1996)
Takayoshi Shimura:“Si 衬底上热氧化物层中晶体 SiO_2 的 X 射线衍射证据”Si-SiO_2 界面的物理和化学 3. 96-1。
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作者:
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Takayoshi Shimura: "X-ray scattering from crystalline SiO_2 in the thermal oxide layers on viccinal Si (111) surfaces" Acta Crystallographica. A52. C465-C465 (1996)
Takayoshi Shimura:“邻近 Si (111) 表面热氧化层中晶体 SiO_2 的 X 射线散射”《晶体学报》。
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T.Shimura, I.Takahashi, J.Harada, and M.Umeno: "X-ray diffraction evidence for crystalline SiO_2 in thermal oxide layrs on Si substrate" The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface 3. 96-1. 456-467 (1996)
T.Shimura、I.Takahashi、J.Harada 和 M.Umeno:“Si 基板上热氧化物层中结晶 SiO_2 的 X 射线衍射证据”The Chemistry of SiO_2 and the Si-SiO_2 Interface 3. 96-
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作者:
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通讯作者:
Takayoshi Shimura: "X-RAY DIFFRACTION EVIDENCE FOR CRYSTALLINE SiO_2 IN THERMAL OXIDE LAYERS ON Si SUBSTRATES" The Physics and Chemistry of Si-SiO_2 Interface 3. (in press).
Takayoshi Shimura:“Si 基板上热氧化层中晶体 SiO_2 的 X 射线衍射证据”Si-SiO_2 界面的物理和化学 3。(出版中)。
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通讯作者:
Takayoshi Shimura: "X-ray diffraction evidence for the existence of epitaxial microcrystalites in thermally oxidized SiO_2 thin films on Si (111) surfaces" J. Cryst. Growth. 166. 786-791 (1996)
Takayoshi Shimura:“X 射线衍射证明 Si (111) 表面热氧化 SiO_2 薄膜中存在外延微晶” J. Cryst。
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共 11 条
Measurements of the strain in strained Si wafers by X-ray diffraction methods
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批准号:20560017
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2008
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负责人:UMENO Masataka
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依托单位:
X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces
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批准号:11450014
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.05万
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财政年份:1999
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负责人:UMENO Masataka
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依托单位:
Development of room-temperature oxidation method of Si due to pulsed hyperthermal atomic oxygen beam
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批准号:09555004
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.46万
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财政年份:1997
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负责人:UMENO Masataka
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依托单位:
Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction
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批准号:09450016
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.36万
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财政年份:1997
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负责人:UMENO Masataka
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依托单位:
Control of electric charge at the interface in the RTO and low temperature oxidation of SOI
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批准号:07455025
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.1万
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财政年份:1995
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负责人:UMENO Masataka
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依托单位:
Development of High Voltage Field Ion Microscope for the Studies of Surface, Interface, and Substrate of Materials
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批准号:60850031
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$3.84万
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财政年份:1985
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负责人:UMENO Masataka
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依托单位:
海外基金