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X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces

SiO_2/Si界面形成过程的X射线衍射研究

基本信息

批准号：
11450014
负责人：
UMENO Masataka
金额：
$ 10.05万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11450014/
关键词：
SiO_2 silicon oxidation thin film interface x-ray diffraction

项目摘要

A lot of studies for the silicon dioxide have been carried out so far, but the oxidation process is not clear. For example, a layer-by-layer growth of the thermal oxidation is one of unprecedented phenomena. A SIMOX (seperatiorr-hy-implanted oxygen) wafer is one of the SOI (silicon-on-insulator) substrate, which is expected for low-power and high-speed devices. However, the formation process of the buried oxide layer is obscure. In this study we studied the formation process of the interface between the SiO_2 and Si crystals by X-ray diffraction technique.The growth of epitaxially ordered Si0_2 in oxygen-implanted silicon during thermal annealing was investigated. The extra diffraction streak was observed at the initial stage of annealing. This means that the small precipitate itself has the ordered structure of 2x2 symmetry with respect to the Si layers. As the size of the precipitates became larger upon further annealing, the intensity of the extra streak gradually increased. This indicates that epitaxial growth of the ordered precipitates occurred, particulary, in the lateral direction because the ordered structure has better periodicity in the lateral direction than in the perpendicular direction. The formation of the buried oxide layer in the perpendicular direction was due mainly to coalescence rather than to epitaxial growth.It was also found that the thermal oxide layer on Si(113) did not simple amorphous structure, but has the ordered sturucture with an epitaxial relation with the Si substrate, which was similar to those on the Si(001) and (111) substrates.

目前对二氧化硅的氧化过程进行了大量的研究，但氧化过程尚不清楚。例如，热氧化的逐层生长是前所未有的现象之一。SIMOX（隔离注氧）晶片是SOI（绝缘体上硅）衬底的一种，有望用于低功耗和高速器件。然而，埋氧层的形成过程是模糊的。本文利用X射线衍射技术研究了SiO_2与Si晶体界面的形成过程，并对注氧硅中外延有序SiO_2的生长过程进行了研究。在退火的初始阶段观察到额外的衍射条纹。这意味着小沉淀物本身具有相对于Si层2x2对称的有序结构。随着沉淀物的尺寸在进一步退火后变得更大，额外条纹的强度逐渐增加。这表明，外延生长的有序沉淀物发生，特别是在横向方向上，因为有序结构具有更好的周期性在横向方向比在垂直方向。垂直方向的埋氧层主要是由聚结而不是外延生长形成的，Si（113）上的热氧化层不是简单的非晶结构，而是与Si衬底有外延关系的有序结构，这与Si（001）和（111）衬底上的热氧化层相似。