Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction

通过光刻和KOH化学刻蚀在Si（O01）表面形成沟槽的微观结构。沟渠的宽度为0.2至5.0米。沟宽与沟距之比为1:1 ~ 1:20。每个区域的大小为1.0 × 2. mm^2。原子力显微镜证实了光栅的形状，表明它们具有V形。在对称设置下，在111 Bragg点周围观察到x射线衍射图。通过在样品和探测器前放置0.5mm宽的狭缝和Ge通道切割晶体来限制有效表面积，从而分别测量邻近区域的x射线衍射图。根据几个区域的衍射图估计了光栅的周期长度和斜率方向。傅里叶变换计算的强度分布与观测值相近。此外，还成功地观察到了热氧化光栅的衍射图样。在布拉格点附近的强度分布有轻微的不对称，但与未氧化时的强度分布基本一致。由于不对称性不能仅用形状效应来解释，因此认为强度分布不仅提供了晶体形状的信息，还提供了晶体微观结构的信息，如晶格弛豫。

Microstructures of ditches were formed on the Si(O01) surfaces by lithography and chemical etching with KOH.The width of the ditches ranges from 0.2 to 5.0mum.The ratio of the width and the space of the ditches ranges from 1 : 1 to 1 : 20. The size of each area was 1.0x2.Omm^2. The shape of the gratings were confiqried by atomic force microscopy, indicating that they have V shape. X-ray diffraction patterns were observed around the 111 Bragg point in the symmetrical setting. The effective surface area was limited by placing slits of 0.5mm wide and Ge channel cut crystal before the samples and the detector so that the X-ray diffraction patterns from the neighboring areas were measured separately. The periodic length of the gratings and the direction of the slopes were estimated from the diffraction patterns from the several areas. The intensity distributions calculated by Fourie transform were similar to those of the observations. Furthermore, the diffraction patterns were successfully observed from the thermally oxidized gratings. They were almost as same as those form the non-oxidized ones, while the intensity distributions showed slight asymmetry around the Bragg point. It is considered that the intensity distribution give us the information not only about the shape of the crystal, but also the crystal structure in the microstructure, such as lattice relaxation, because the asymmetry could not be interpreted only by the shape effect.