Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction

X射线衍射定量表征半导体表面微结构的方法的发展

基本信息

  • 批准号:
    09450016
  • 负责人:
  • 金额:
    $ 7.36万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1997
  • 资助国家:
    日本
  • 起止时间:
    1997 至 1998
  • 项目状态:
    已结题

项目摘要

Microstructures of ditches were formed on the Si(O01) surfaces by lithography and chemical etching with KOH.The width of the ditches ranges from 0.2 to 5.0mum.The ratio of the width and the space of the ditches ranges from 1 : 1 to 1 : 20. The size of each area was 1.0x2.Omm^2. The shape of the gratings were confiqried by atomic force microscopy, indicating that they have V shape. X-ray diffraction patterns were observed around the 111 Bragg point in the symmetrical setting. The effective surface area was limited by placing slits of 0.5mm wide and Ge channel cut crystal before the samples and the detector so that the X-ray diffraction patterns from the neighboring areas were measured separately. The periodic length of the gratings and the direction of the slopes were estimated from the diffraction patterns from the several areas. The intensity distributions calculated by Fourie transform were similar to those of the observations. Furthermore, the diffraction patterns were successfully observed from the thermally oxidized gratings. They were almost as same as those form the non-oxidized ones, while the intensity distributions showed slight asymmetry around the Bragg point. It is considered that the intensity distribution give us the information not only about the shape of the crystal, but also the crystal structure in the microstructure, such as lattice relaxation, because the asymmetry could not be interpreted only by the shape effect.
通过光刻和KOH化学刻蚀在Si(O01)表面形成沟槽的微观结构。沟渠的宽度为0.2至5.0米。沟宽与沟距之比为1:1 ~ 1:20。每个区域的大小为1.0 × 2. mm^2。原子力显微镜证实了光栅的形状,表明它们具有V形。在对称设置下,在111 Bragg点周围观察到x射线衍射图。通过在样品和探测器前放置0.5mm宽的狭缝和Ge通道切割晶体来限制有效表面积,从而分别测量邻近区域的x射线衍射图。根据几个区域的衍射图估计了光栅的周期长度和斜率方向。傅里叶变换计算的强度分布与观测值相近。此外,还成功地观察到了热氧化光栅的衍射图样。在布拉格点附近的强度分布有轻微的不对称,但与未氧化时的强度分布基本一致。由于不对称性不能仅用形状效应来解释,因此认为强度分布不仅提供了晶体形状的信息,还提供了晶体微观结构的信息,如晶格弛豫。

项目成果

期刊论文数量(0)
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Takayoshi Shimura: "Analysis of Ordered Structure of Buried Oxide Layers in SIMOX Wafers" Proceedings of 9th Int.Symp.on Silicon on Insulator Tech and Dev.(in press). (1999)
Takayoshi Shimura:“SIMOX 晶圆中埋氧化层的有序结构分析”第九届 Int.Symp.on Silicon on Insulator Tech and Dev 论文集(正在出版)。
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Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno: ""Analysis of ordered structure of buried oxide layrs in SIMOX wafers"" Proceedings of the 9th Intermational Symposium on Silicon-on-Insulator Technology and Devices. (in press).
Takayoshi Shimura、Takuji Hosoi 和 Masataka Umeno:“SIMOX 晶圆中埋氧化层的有序结构分析”第九届绝缘体上硅技术与器件国际研讨会论文集。
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T.Shimura et al.: "Comment on "Observation of a Distributed Epitacxial Oxide in Thermally Grown SiO2 on Si (001)"" Phys.Rev.Lett.7(24). 4932-4932 (1997)
T.Shimura 等人:“对“Si (001) 上热生长 SiO2 中分布外延氧化物的观察”的评论”Phys.Rev.Lett.7(24)。
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Takayoshi Shimura: "Analysis of Ordered Structue of Buried Oxide Layers in SIMOX Wafers" Proceedings of 9th Int.Symp.on Silicon on Insulator. (in press). (1999)
Takayoshi Shimura:“SIMOX 晶圆中埋氧化层的有序结构分析”第九届绝缘体上硅国际会议论文集。
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    0
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志村考功 他: "シリコン熱酸化膜中のSiO_2結晶相" 日本放射光学会誌. 10巻3号. 36-298 (1997)
Takako Shimura 等:“硅热氧化膜中的 SiO_2 晶相”日本辐射光学学会杂志第 10 卷,第 3. 36-298 期(1997 年)。
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UMENO Masataka其他文献

UMENO Masataka的其他文献

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{{ truncateString('UMENO Masataka', 18)}}的其他基金

Measurements of the strain in strained Si wafers by X-ray diffraction methods
通过 X 射线衍射法测量应变硅片的应变
  • 批准号:
    20560017
  • 财政年份:
    2008
  • 资助金额:
    $ 7.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces
SiO_2/Si界面形成过程的X射线衍射研究
  • 批准号:
    11450014
  • 财政年份:
    1999
  • 资助金额:
    $ 7.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of room-temperature oxidation method of Si due to pulsed hyperthermal atomic oxygen beam
脉冲高温原子氧束硅室温氧化方法的研制
  • 批准号:
    09555004
  • 财政年份:
    1997
  • 资助金额:
    $ 7.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Control of electric charge at the interface in the RTO and low temperature oxidation of SOI
RTO界面电荷控制及SOI低温氧化
  • 批准号:
    07455025
  • 财政年份:
    1995
  • 资助金额:
    $ 7.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of quantitative characterization method of microstructures by X-ray scattering
X射线散射微观结构定量表征方法的发展
  • 批准号:
    07555337
  • 财政年份:
    1995
  • 资助金额:
    $ 7.36万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of High Voltage Field Ion Microscope for the Studies of Surface, Interface, and Substrate of Materials
开发用于材料表面、界面和基底研究的高压场离子显微镜
  • 批准号:
    60850031
  • 财政年份:
    1985
  • 资助金额:
    $ 7.36万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

相似海外基金

Development and application of a holographic method for the analysis of interfaces with atomic resolution using X-ray CTR scattering
利用 X 射线 CTR 散射分析原子分辨率界面的全息方法的开发和应用
  • 批准号:
    22360018
  • 财政年份:
    2010
  • 资助金额:
    $ 7.36万
  • 项目类别:
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Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurement
通过 X 射线 CTR 散射测量分析半导体中杂质原子的分布
  • 批准号:
    14550007
  • 财政年份:
    2002
  • 资助金额:
    $ 7.36万
  • 项目类别:
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