Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction

用光刻和KOH化学腐蚀的方法在Si（O 01）表面形成了沟槽微结构，沟槽宽度为0.2 ~ 5.0 μ m，沟槽的宽度与间距之比为1：1 ~ 1：20。每个区域的大小为1.0x2.0mm^2。用原子力显微镜对光栅的形状进行了观察，结果表明光栅为V形。在对称设置中在111布拉格点周围观察X射线衍射图案。通过在样品和检测器前放置0.5mm宽的狭缝和Ge通道切割晶体来限制有效表面积，使得来自相邻区域的X射线衍射图案被分别测量。光栅的周期长度和斜坡的方向估计从几个区域的衍射图案。用傅里叶变换计算得到的强度分布与观测结果基本一致。此外，成功地观察到衍射图案从热氧化光栅。它们几乎与未氧化的那些相同，而强度分布在布拉格点附近显示出轻微的不对称性。人们认为，强度分布给我们的信息，不仅是关于晶体的形状，而且在微观结构中的晶体结构，如晶格弛豫，因为不对称性不能解释的形状效应。

Microstructures of ditches were formed on the Si(O01) surfaces by lithography and chemical etching with KOH.The width of the ditches ranges from 0.2 to 5.0mum.The ratio of the width and the space of the ditches ranges from 1 : 1 to 1 : 20. The size of each area was 1.0x2.Omm^2. The shape of the gratings were confiqried by atomic force microscopy, indicating that they have V shape. X-ray diffraction patterns were observed around the 111 Bragg point in the symmetrical setting. The effective surface area was limited by placing slits of 0.5mm wide and Ge channel cut crystal before the samples and the detector so that the X-ray diffraction patterns from the neighboring areas were measured separately. The periodic length of the gratings and the direction of the slopes were estimated from the diffraction patterns from the several areas. The intensity distributions calculated by Fourie transform were similar to those of the observations. Furthermore, the diffraction patterns were successfully observed from the thermally oxidized gratings. They were almost as same as those form the non-oxidized ones, while the intensity distributions showed slight asymmetry around the Bragg point. It is considered that the intensity distribution give us the information not only about the shape of the crystal, but also the crystal structure in the microstructure, such as lattice relaxation, because the asymmetry could not be interpreted only by the shape effect.