Measurements of the strain in strained Si wafers by X-ray diffraction methods

通过 X 射线衍射法测量应变硅片的应变

• 批准号: 20560017
• 负责人: UMENO Masataka
• 金额: $ 3万
• 依托单位: Fukui University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560017/
• 关键词: 結晶評価; 歪シリコンウエーハ; X線回折; トポグラフィ; 歪シリコン; 酸化濃縮; 放射光; 逆格子マッピング

The aim of this study was to establish a method for characterizing the crystalline perfection and strain on the whole area of the strained Si wafers which would be promising as the LSI wafers of the next era. Synchrotron radiation was used to obtain X-ray topographs of whole area of 30cm wafers and the amount of the strain was estimated with the reciprocal lattice mapping method. From the CCD topographic images obtained by successively changing incident angles, locking curves of all points corresponding to the pixels of the CCD were obtained. The peak positions, FWHMs and integrated intensities of the locking curves were imaged independently. From these images it was revealed that the commercial strained silicon wafers contain crystalline imperfections such as inclination of crystalline planes, while the amount of the strain was nearly 0.75% and almost constant whole over the wafers. The aim of the present study could be attained.

本研究的目的是建立一种方法来表征晶体完整性和应变的应变硅晶片的整个区域，这将是有前途的LSI晶片的下一个时代。利用同步辐射获得了30cm厚硅片的全面积X射线形貌图，并利用倒易晶格映射方法估算了应变量。从连续改变入射角获得的CCD地形图像中，获得与CCD像素对应的所有点的锁定曲线。锁定曲线的峰位置、半高宽和积分强度独立成像。从这些图像中可以看出，商业应变硅晶片包含结晶缺陷，例如结晶平面的倾斜，而应变量接近0.75%，并且在晶片上几乎是恒定的。本研究的目的是可以达到的。

项目成果

Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

同步辐射X射线形貌观察绝缘体晶片上超临界厚度应变硅的晶体缺陷

• 发表时间: 2008
• 期刊: ECS Transactions 16
• 作者: T.Shimura;T.Inoue;Y.Okamoto;T.Hosoi;H.Edo;S.Iida;A.Ogura;H.Watanabe
• 通讯作者: H.Watanabe

Thermal Stability and Electron Irradiation Damage of Ordered Structure in the Thermal Oxide Layer on Si

硅热氧化层有序结构的热稳定性和电子辐照损伤

• 发表时间: 2010
• 期刊: J.Electrochem.Soc. 157
• 作者: T.Shimura;D.Shimokawa;T.Inoue;T.Hosoi;H.Watanabe;O.Sakata;M.Umeno
• 通讯作者: M.Umeno

Observation of Two-Dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography

同步辐射X射线形貌观察应变硅片晶格倾角和应变的二维分布

• 发表时间: 2009
• 作者: Takayoshi Shimura;Atsushi Ogura;他
• 通讯作者: 他

Interface Reaction and Rate Enhancement of SiGe Thermal Oxidation SiGe Thermal Oxidation

SiGe 热氧化的界面反应和速率增强 SiGe Thermal Oxidation

• 发表时间: 2010
• 期刊: ECS Trans.
• 作者: M.Hojo;K.Okimura;T.shimura
• 通讯作者: T.shimura

放射光X線トポグラフィによる歪みSiウエーハの歪み及び格子面傾斜揺らぎの2次元分布測定

利用同步加速器X射线形貌测量应变硅片应变和晶面倾斜波动的二维分布

• 发表时间: 2009
• 作者: S. Nishikawa;S. Yamamura;Y.Sugawara;M.M.Matsushita;T.Sugawara;志村考功
• 通讯作者: 志村考功