Measurements of the strain in strained Si wafers by X-ray diffraction methods

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The aim of this study was to establish a method for characterizing the crystalline perfection and strain on the whole area of the strained Si wafers which would be promising as the LSI wafers of the next era. Synchrotron radiation was used to obtain X-ray topographs of whole area of 30cm wafers and the amount of the strain was estimated with the reciprocal lattice mapping method. From the CCD topographic images obtained by successively changing incident angles, locking curves of all points corresponding to the pixels of the CCD were obtained. The peak positions, FWHMs and integrated intensities of the locking curves were imaged independently. From these images it was revealed that the commercial strained silicon wafers contain crystalline imperfections such as inclination of crystalline planes, while the amount of the strain was nearly 0.75% and almost constant whole over the wafers. The aim of the present study could be attained.