Development of characterization system for strain distribution at semiconductor heterojunction interfaces
半导体异质结界面应变分布表征系统的开发
基本信息
- 批准号:62850002
- 负责人:
- 金额:$ 5.5万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research
- 财政年份:1987
- 资助国家:日本
- 起止时间:1987 至 1988
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this research project, we have investigated the interface stress at some semiconductor heterojunction interfaces and developmed a new characterization sysytem for two-dimensional distribution of the heterointerface stress. Here we have studied mainly two cases of InGaAsP/GaAs heterostructure grown on GaAs substrate by liquid phase epitaxy and ZnSSe/GaAs heterostructure grown on GaAs by organometallic vapor hpase epitaxy. In particular, we have introduced a new characterization method for interface stress at semiconductor heterostructures which was developed by ourselves several years ago. This method utilizes the luminescence due to 3d transition-metal impurities in GaAs crystal which is very sensitive to strain field around the impurities. With the use of this method we have developed a new system shich measures Cr-related luminescence in GaAs near semiconductor heterointerfaces by excitation of Ar- or Kr-ion laser and characterizes two-dimensional distribution of the interface stress at heterostructures. In this system we have introduced a new optics system for the luminescence measurements. Using this system developed in this project, we have investigated two semiconductor heterostructures of InGasP/GaAs and ZnS_xSe_<1-x>/GaAs, and obtained information on the distribution of the interface stress at these heterostructures and the origin of such interface stress.
在本研究项目中,我们研究了一些半导体异质结界面的界面应力,并建立了一种新的异质结界面应力二维分布表征体系。本文主要研究了液相外延法在GaAs衬底上生长InGaAsP/GaAs异质结构和有机金属气相外延法在GaAs衬底上生长ZnSSe/GaAs异质结构两种情况。特别地,我们介绍了我们几年前开发的一种新的半导体异质结构界面应力表征方法。该方法利用了砷化镓晶体中三维过渡金属杂质对杂质周围应变场非常敏感的发光特性。利用这种方法,我们开发了一种新的系统,该系统在半导体异质界面附近的GaAs中,通过Ar或k离子激光激发来测量cr相关发光,并表征了异质结构界面应力的二维分布。在该系统中,我们介绍了一种用于发光测量的新型光学系统。利用本项目开发的系统,研究了InGasP/GaAs和ZnS_xSe_<1-x>/GaAs两种半导体异质结构,获得了这些异质结构界面应力的分布和界面应力的来源。
项目成果
期刊论文数量(13)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Tonami; T. Nishino; Y. Hamakawa; T. Sakamoto; S. Fujita: ""Interface Stress at OMVPE-Grown ZnS_xSe_<1-x>/GaAs: Cr Heterostructures"" Jpn. J. Appl. Phys.27. 506-508 (1988)
砺波 Y.
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T.Nishino: 1987 Workshop on Semiconductor Defect Physics and Engineering,Tainan,RUC.35-46 (1987)
T.Nishino: 1987年半导体缺陷物理与工程研讨会,台南,RUC.35-46 (1987)
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T.Nishino: ""A New High-Sensitivity Charactezation Method of Interface Stress at Heterostructures by Cr-Related Luminescence"" IEEE Quantum Electronics. QE-25. (1989)
T.Nishino:“一种通过 Cr 相关发光来表征异质结构界面应力的新高灵敏度方法”,IEEE 量子电子学。
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T.Nishino: 1987 Workshop or Semiconductor Defect physico and Eugineering, Tainav, ROC. 35-46 (1987)
T.Nishino:1987 年研讨会或半导体缺陷物理学和 Eugineering,Tainav,中华民国。
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T.Nishino: IEEE.Quanfum Electronics. QE25. May (1989)
T.Nishino:IEEE.Quantfum Electronics。
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NISHINO Taneo其他文献
NISHINO Taneo的其他文献
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{{ truncateString('NISHINO Taneo', 18)}}的其他基金
Characterization of Wide-Bandgap Heterostructures by Reflectance-Difference Spectroscopy
通过反射差光谱表征宽带隙异质结构
- 批准号:
12450014 - 财政年份:2000
- 资助金额:
$ 5.5万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Mudulation Spectroscopy for Wide-Gap Semiconductors
宽带隙半导体调制光谱学的发展
- 批准号:
10555004 - 财政年份:1998
- 资助金额:
$ 5.5万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of New Quantum Structure by Long-Range Ordered Semiconductor Superlattice Thin Films
长程有序半导体超晶格薄膜开发新量子结构
- 批准号:
09305020 - 财政年份:1997
- 资助金额:
$ 5.5万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Developement of a new modulation spectroscopy by exciting polarized light
通过激发偏振光开发新的调制光谱
- 批准号:
08555006 - 财政年份:1996
- 资助金额:
$ 5.5万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Developement of In-situ Modulation Spectroscopy for Atomically Localized Electronic States
原子局域电子态原位调制光谱学的发展
- 批准号:
05555088 - 财政年份:1993
- 资助金额:
$ 5.5万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Grain Boundary Conduction Control in Polycrystalline Semiconductors
多晶半导体中的晶界传导控制
- 批准号:
63460120 - 财政年份:1988
- 资助金额:
$ 5.5万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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