Development of New Quantum Structure by Long-Range Ordered Semiconductor Superlattice Thin Films

长程有序半导体超晶格薄膜开发新量子结构

• 批准号: 09305020
• 负责人: NISHINO Taneo
• 金额: $ 18.05万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09305020/
• 关键词: Atomic Ordering; Quantum Structure; Molecular Beam Epitaxy; Ultra Fase Spectroscopy; Reflectance difference; 分線エピタキシー; 分子線エビタキシー; 分子線エピタキシ-

We have performed the material research of the natural superlattice super-thin film from two view points ; (1)physics and (2)preparation of the new semiconductor quantum structure material, in order to create new quantum structure materials which semiconductor natural superlattice super-thin film was used for. Relations between order parameter and the band-gap fluctuation of the natural superlattice thin film were cleared, and it succeeded in the control of the fluctuations that result. It became clear that injected or excited carriers in the natural superlattice thin film have quantum behavior from the ultra-fast spectroscopy and the electronic transport ptoperty by Time-of Flight measurements. On the other hand, development of the crystal growth technology controlled in atom scale was indispensable, and we built the system which therefore measured a RDS(reflectance-difference spectroscopy)signal with RHEED during the crystal growth in real time to grow new natural superlattice quantum structure materials. It succeeded in observing atomic behavior in the crystal growth front during the atomic layer growth by using this technology with molecular beam epitaxy.

我们从两个角度对天然超晶格超薄膜的材料进行了研究；(1)物理(2)新型半导体量子结构材料的制备，以制备以半导体天然超晶格超薄膜为载体的新型量子结构材料。澄清了阶参量与自然超晶格薄膜带隙涨落之间的关系，成功地控制了由此产生的涨落。从超快光谱和飞行时间测量的电子输运性质可以清楚地看出，在天然超晶格薄膜中注入或激发的载流子具有量子行为。另一方面，在原子尺度上控制晶体生长技术的发展是必不可少的，因此我们建立了一个系统，在晶体生长过程中利用RHEED实时测量RDS（反射-差分光谱）信号，以生长新的天然超晶格量子结构材料。利用分子束外延技术，成功地观察到了原子层生长过程中晶体生长前沿的原子行为。

项目成果

S. Abe: "Auger valence electron spectra in Ca-silicides"J. Mat. Res.. Vol. 12, No. 2. 407-411 (1997)

S. Abe：“硅化钙中的俄歇价电子谱”J。

H.Nishida, S.Fujii, H.Nakayama and T.Nishino: "Molecular Beam Scattering-Desorption Study of Surface-Reaction Kinetics of MBE Growth of GaAs(001)"Proc. 2nd Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach. 61-64 (1997)

H.Nishida、S.Fujii、H.Nakayama 和 T.Nishino：“GaAs(001) 的 MBE 生长表面反应动力学的分子束散射-解吸研究”Proc。

A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (1999)

A.Shimizu：“超薄二氧化硅生长过程中的结构演化和价电子态变化”应用表面科学。

T.Kita: "Observation of ordered-induced indirect to direct transition in AlGaInP" Proc.Electronic Materials Conferences. 40th (Invited). 27-27 (1998)

T.Kita：“观察 AlGaInP 中有序诱导的间接到直接转变”Proc.Electronic Materials Conferences。

N. Tsukada: "Rotational Transfer and Dynamical Bunching of an Electron in Three Coupled Quantum Dots Induced by a Circularly Polarized Electric field"Solid State Electron. Vol. 42, No.7-8. 1273-1280 (1998)

N. Tsukada：“圆极化电场诱导的三个耦合量子点中电子的旋转转移和动态聚束”固态电子。