Development of New Quantum Structure by Long-Range Ordered Semiconductor Superlattice Thin Films

我们从物理和新型半导体量子结构材料的制备两个角度对天然超晶格超薄膜材料进行了研究，以期创造出半导体天然超晶格超薄膜所适用的新型量子结构材料。揭示了有序参数与自然超晶格薄膜带隙涨落之间的关系，并成功地控制了由此产生的带隙涨落。通过超快光谱和飞行时间测量的电子输运性质表明，在天然超晶格薄膜中注入或激发的载流子具有量子行为。另一方面，发展原子尺度控制的晶体生长技术是必不可少的，因此，我们建立了一个系统，在晶体生长过程中用RHEED测量RDS（反射差光谱）信号在真实的时间生长新的天然超晶格量子结构材料。利用该技术与分子束外延技术相结合，成功地观察到了原子层生长过程中晶体生长前沿的原子行为。

We have performed the material research of the natural superlattice super-thin film from two view points ; (1)physics and (2)preparation of the new semiconductor quantum structure material, in order to create new quantum structure materials which semiconductor natural superlattice super-thin film was used for. Relations between order parameter and the band-gap fluctuation of the natural superlattice thin film were cleared, and it succeeded in the control of the fluctuations that result. It became clear that injected or excited carriers in the natural superlattice thin film have quantum behavior from the ultra-fast spectroscopy and the electronic transport ptoperty by Time-of Flight measurements. On the other hand, development of the crystal growth technology controlled in atom scale was indispensable, and we built the system which therefore measured a RDS(reflectance-difference spectroscopy)signal with RHEED during the crystal growth in real time to grow new natural superlattice quantum structure materials. It succeeded in observing atomic behavior in the crystal growth front during the atomic layer growth by using this technology with molecular beam epitaxy.