Developement of a new modulation spectroscopy by exciting polarized light

通过激发偏振光开发新的调制光谱

• 批准号: 08555006
• 负责人: NISHINO Taneo
• 金额: $ 8.19万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555006/
• 关键词: Modulation Spectroscopy; Reflectance difference; Semiconductor Surface; Electronic States; 半導体量子構造; 分子線エピタキシ-; 変調分光法; 非破壊評価; 半導体量子構造デバイス

We developed a new modulation technique for semiconductor quantum structures by using polarization anisotropy. We focus our attention on reflectance signal modulated by polarized light. The summary of this research are followed. (1) In order to develope an analysis method, we theoretically investigated dielectric functions at semiconductor surfaces. (2) We developed a new in-situ characterization system to observe electronic states during the crystal growth. A probe light irradiate the sample surface, and the polarization modulated signal was detected. It was found that the incident angle of the probe light is important to observe the surface electronic states. (3) An anisotropic character was observed for the p and s waves of the probe light, which reflect the anisotropy of the dielectric function coming from surface morphology and surface reconstructions.This realizes a new sensitive detection of electronic states localized at the surface. By using this technique, we can observe the electronic states changed by the abrupt surface and adsorped atoms. (4) Our developed system can measure a modulation spectrum and its dynamic character during the growth. This technique promises a practical use of the in-situ modulation spectroscopy.

我们发展了一种利用偏振各向异性对半导体量子结构进行调制的新技术。我们把注意力集中在偏振光调制的反射率信号上。本研究的结论如下。(1)为了发展一种分析方法，我们从理论上研究了半导体表面的介电函数。(2)我们开发了一个新的原位表征系统，以观察晶体生长过程中的电子状态。用探测光照射样品表面，探测到偏振调制信号。研究发现，探测光的入射角对观察表面电子态是很重要的。(3)探测光的p波和s波具有各向异性，反映了表面形貌和表面重构引起的介电函数的各向异性，实现了对表面局域电子态的灵敏探测。利用这种技术，我们可以观察到突变表面和吸附原子对电子态的影响。(4)我们研制的系统可以测量调制光谱及其在生长过程中的动态特性。该技术为原位调制光谱技术的实际应用提供了保证。

项目成果

T.Kita and T.Nishino: "Electron-Beam Electroreflectance Spectroscopy of Semiconductors" Jpn.J.Appl.Phys.Vol.35, No.10. 5367-5373 (1996)

T.Kita 和 T.Nishino：“半导体的电子束电反射光谱”Jpn.J.Appl.Phys.Vol.35，No.10。

K.Yamashita, T.Kita, H.Nakayama, T.Nishino: "Role of carrier lonlization in energy up-conversion at (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P/GaAs heterointerface" Proc. Electronic Materials Sympasium. 16th. 101-103 (1997)

K.Yamashita、T.Kita、H.Nakayama、T.Nishino：“载流子离子化在 (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P/GaAs 异质界面能量上转换中的作用”

H.Nakayama, A.Furuichi, T.Kita, T.Nishino: "Stochastic growth theory of molecular beam epitary with atom correlation effects : A monte-carlo master equation method" Applied Surface Science. vol 113/114. 631-637 (1997)

H.Nakayama、A.Furuichi、T.Kita、T.Nishino：“具有原子相关效应的分子束外延的随机生长理论：蒙特卡罗主方程方法”应用表面科学。

K.Yamashita, T.Kita, H.Nakayama, T.Nishino: "Photaliminescence from mestable state in long-rang ordered (Al_<0.5>Ga_<0.5>)_<0.51>Ino.49P" Physical Review B. vol.55 No.7. 4411-4416 (1997)

K.Yamashita、T.Kita、H.Nakayama、T.Nishino：“长程有序中稳态的光致发光 (Al_<0.5>Ga_<0.5>)_<0.51>Ino.49P”物理评论 B. 卷。

K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Up-Converted Photoluminescene from Long-Range Ordered (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P on GaAs substrates" Proc.The 2nd Asia Symposium on Condensed Matter Photophysics Nara. 89-92 (1996)

K.Yamashita、T.Kita、H.Nakayama 和 T.Nishino：“GaAs 衬底上长程有序 (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P 的上转换光致发光”