权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Characterization of Wide-Bandgap Heterostructures by Reflectance-Difference Spectroscopy

通过反射差光谱表征宽带隙异质结构

基本信息

批准号：
12450014
负责人：
NISHINO Taneo
金额：
$ 8.51万
依托单位：
Kobe City College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450014/
关键词：
RDS Wide-bandgap materials Heterointerface in-situ monitoring

项目摘要

The purpose of this research is to establish the technique to analyze electronic structures of wide-gap heterostructures. In this research, we developed the new optical characterization technique so called reflectance-difference spectroscopy(RDS). This technique achieves in-situ characterizations during the crystal growth. The RDS spectra reveal the electronic structures localized at the surface and interface. In the case of heteroepitaxial growth, especially heterovalent system such as GaN/GaAs, understanding and control of the electronic structures at the heterointerface are very important to control the interface. RDS and reflection-high-energy-electron diffraction(RHEED) include information of short- and long-range ordering of the crystal structures, respectively. Therefore, simultaneous observation of both RDS and RHEED realize detailed in-situ characterization of heterointerfaces. For our goal, RDS and RHEED systems mounted on a molecular-beam epitaxy(MBE) were developed. We appl … More ied this newly developed characterization technique to GaN grown on GaAs(001), and got the following important resuts.(1)We used a RE-plasma source for nitrogen. Spectroscopy of plasma luminescence enables us to control precisely the plasma conditions.(2)RDS spectra of GaN were observed for the first time. The gand gap of GaN is about 3.5 eV, which acts as a window when we characterize the heterointerface. This is the most important feature in this technique.(3)We measured RDS spectra under various growth conditions. The results give relations between the growth conditions and the interface electronic conditions.(4)Furthermore, we succeeded to characterize the interface during the GaN growth. These dynamic characterizations will open new field of growth monitoring.From our research results, we confirmed that the newly developed spectroscopy, RDS, combined with RHEED is most suitable for the evaluation of the wide-gap semiconductor heterostructures. Moreover, an outlook to the realization of this new technique was made. Less

本研究旨在建立宽禁带异质结电子结构分析技术。在本研究中，我们发展了一种新的光学表征技术，称为反射差光谱（RDS）。该技术在晶体生长过程中实现了原位表征。RDS谱揭示了局域在表面和界面的电子结构。在异质外延生长的情况下，特别是异质结系统如GaN/GaAs，理解和控制异质界面处的电子结构对于控制界面非常重要。RDS和反射高能电子衍射（RHEED）分别包括晶体结构的短程和长程有序信息。因此，同时观察RDS和RHEED实现详细的异质界面的原位表征。为了我们的目标，RDS和RHEED系统安装在分子束外延（MBE）的开发。我们申请 ...更多信息将这种新的表征技术应用于GaAs（001）衬底上生长的GaN，得到了如下重要结果。(1)We使用RE等离子体源作为氮源。等离子体发光光谱学使我们能够精确地控制等离子体条件。（2）首次观测到GaN的RDS谱。GaN的禁带宽度约为3.5eV，这是我们表征异质界面的窗口。这是这项技术最重要的特点。(3)We在各种生长条件下测量RDS光谱。结果给出了生长条件与界面电子条件之间的关系。（4）对GaN生长过程中的界面进行了表征。从我们的研究结果中，我们证实了新发展的光谱学，RDS，结合RHEED是最适合的宽禁带半导体异质结构的评价。最后，对该技术的实现进行了展望。少