Grain Boundary Conduction Control in Polycrystalline Semiconductors

多晶半导体中的晶界传导控制

• 批准号: 63460120
• 负责人: NISHINO Taneo
• 金额: $ 3.9万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-63460120/
• 关键词: Polycrystals; Tin Oxide Films; Grain Boundary Conduction; Solar Cells; 多結晶導体; 電気伝導性; 薄膜表示デバイス

In this research project, we have investigated the electrical conduction in polycrystalline semiconductors, with emphasis on the electrical conduction of polycrystalline tin oxide (SnO_2) thin films deposited on glass substrate by the chemical vopr deposition method. For the purpose we have constructed an automatic measurement system of Hall effect in a wide temperature range by using a computer. In this system we were able to measure Hall effect of a series of SnO_2 polycrystalline thin films in the temperature range from 15 K to 300 K, and also analyze automatically data of carrier concentration and mobility of SnO_2 films. As a result, we have obtained the following results: i) F impurities in SnO_2 films deposit at grain boundaries and reduce carrier scattering, resulting in the reduction of resistivity of SnO_2 films, ii) the mobility of electrons in SnO_2 films is determined by the scattering due to neutral and ionized impurities of F in SnO_2 which are locarized at the region of grain boundaries in this polycrybtalline semicondcutors, iii) we have also tried to dope other impurities such as 3d trandition metals or rare earth metals to find a new impurity in SnO_2 films with low resistivity, but at present could not find an effective impurity for the purpose.

在本研究项目中，我们研究了多晶半导体中的导电性，重点研究了通过化学vopr沉积方法在玻璃基板上沉积的多晶氧化锡（SnO_2）薄膜的导电性。为此，我们利用计算机构建了宽温度范围内霍尔效应的自动测量系统。在该系统中，我们能够测量一系列SnO_2多晶薄膜在15 K至300 K温度范围内的霍尔效应，并自动分析SnO_2薄膜的载流子浓度和迁移率数据。结果,我们得到了以下结果:i)SnO_2薄膜中的F杂质沉积在晶界处并减少了载流子散射,导致SnO_2薄膜的电阻率降低;ii)SnO_2薄膜中电子的迁移率是由SnO_2中的中性和电离杂质F的散射决定的,这些杂质位于该多晶的晶界区域 iii)我们还尝试掺杂其他杂质如3d传统金属或稀土金属，以在低电阻率SnO_2薄膜中寻找新的杂质，但目前无法找到有效的杂质。

项目成果

T.Terahara: "Effects of Fluorine Doping or Electrical Corduction of Tramsparent Tin Oxide Thin Films" Memoirs of the Fawlty of Engineering,Kobe University. 36. 129-143 (1989)

T.Terahara：“透明氧化锡薄膜的氟掺杂或电传导的影响”神户大学工程学院回忆录。

T. Terahara and T. Nishino: "Effects of Fluorine Doping on Electrical Conduction of Transparent Tin Oxide Thin Films" Memoirs of the Faculty of Kobe University, Vol. 36, pp.129-143, 1989.

T. Terahara 和 T. Nishino：“氟掺杂对透明氧化锡薄膜导电的影响”神户大学学院回忆录，卷。

T.Terahara: "Effects of Fluorine Doping on Electrical Conduction of Transparent Tin Oxide Thin Films" Memoirs of the Faculty of Engineering,Kobe University. 36. 129-143 (1989)

T.Terahara：《氟掺杂对透明氧化锡薄膜导电的影响》神户大学工学部回忆录。