Grain Boundary Conduction Control in Polycrystalline Semiconductors

在本研究项目中，我们研究了多晶半导体的导电性，重点研究了化学vopr沉积法沉积在玻璃衬底上的多晶氧化锡（SnO_2）薄膜的导电性。为此，我们利用计算机构建了一个宽温度范围内霍尔效应的自动测量系统。在该系统中，我们能够在15 ~ 300 K的温度范围内测量一系列SnO_2多晶薄膜的霍尔效应，并自动分析SnO_2薄膜载流子浓度和迁移率数据。因此，我们得到了以下结果：(1) SnO_2薄膜中的F杂质沉积在晶界处，减少载流子散射，导致SnO_2薄膜的电阻率降低；(2)SnO_2中F的中性和离子化杂质在晶界处的散射决定了SnO_2薄膜中电子的迁移率；iii)我们也尝试在低电阻率的SnO_2薄膜中掺杂其他杂质，如3d传统金属或稀土金属，以寻找新的杂质，但目前还没有找到有效的杂质。

In this research project, we have investigated the electrical conduction in polycrystalline semiconductors, with emphasis on the electrical conduction of polycrystalline tin oxide (SnO_2) thin films deposited on glass substrate by the chemical vopr deposition method. For the purpose we have constructed an automatic measurement system of Hall effect in a wide temperature range by using a computer. In this system we were able to measure Hall effect of a series of SnO_2 polycrystalline thin films in the temperature range from 15 K to 300 K, and also analyze automatically data of carrier concentration and mobility of SnO_2 films. As a result, we have obtained the following results: i) F impurities in SnO_2 films deposit at grain boundaries and reduce carrier scattering, resulting in the reduction of resistivity of SnO_2 films, ii) the mobility of electrons in SnO_2 films is determined by the scattering due to neutral and ionized impurities of F in SnO_2 which are locarized at the region of grain boundaries in this polycrybtalline semicondcutors, iii) we have also tried to dope other impurities such as 3d trandition metals or rare earth metals to find a new impurity in SnO_2 films with low resistivity, but at present could not find an effective impurity for the purpose.