Microstructured Carbon/SiCX (X=O, N)-Based High Temperature Strain Gauge

微结构碳/SiCX (X=O, N) 基高温应变片

• 批准号: 411658150
• 负责人: Professor Thomas P. Burg, Ph.D.
• 金额: --
• 依托单位: Fachgebiet Disperse Feststoffe
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/411658150?language=en
• 关键词: Microstructured; Carbon; SiCX; X=O; Based

The project aims to develop micro-sized strain gauges applicable at elevated temperatures (T > 400 °C) addressing both basic and application-related research. The project is mainly focused on the investigation of the piezoresistive effect of C/SiCX (X = O, N) nanocomposite thin layers with 13 to 20 vol% carbon as well as enabling the realization of high-temperature stable sensor structures superior to the state-of-the-art piezoresistive sensors based on silicon. The synthesis and characterization of C/SiCX thin films with a thickness of ~1 µm and their integration in a laboratory sensor test structure will be realized. Silicon cantilevers, spin-coated with C/SiCX thin films, will be used as piezoresistive sensor elements. Their performance will be assessed using a 3-point bending test setup, which will be designed and built for this specific purpose. To enable 4-point measurements of the resistance of the C/SiCX-based ceramic film, high temperature stable connections will be developed and characterized. Furthermore, the crosstalk between the single measurement elements will be investigated, as they are placed on top of an unstructured high impedance piezoresistive C/SiCX layer. The bending tests, including measurements of the gauge factor for both tensile as well as compressive stress, will be performed in a temperature range spanning from room temperature up to 800°C. The tests of the sensor elements will be combined with structural characterization e.g. crack formation under mechanical stress and its evolution concerning composition and thickness in corrosive atmospheres. In a subsequent project, the results from the silicon cantilever experiments can be transferred to the actual application of a backside etched silicon membrane sensor with the piezoresistive C/SiCX layer.

该项目旨在开发适用于高温（100 - 400°C）的微型应变片，解决基础研究和应用相关研究。该项目主要侧重于研究碳含量为13至20 vol%的C/SiCX （X = O， N）纳米复合材料薄层的压阻效应，以及实现优于最先进的基于硅的压阻传感器的高温稳定传感器结构。实现厚度为~1 μ m的C/SiCX薄膜的合成和表征，并将其集成到实验室传感器测试结构中。用C/SiCX薄膜自旋涂覆的硅悬臂将用作压阻式传感器元件。它们的性能将使用三点弯曲测试装置进行评估，该装置将为此特定目的而设计和制造。为了实现C/ sicx基陶瓷膜电阻的四点测量，将开发和表征高温稳定的连接。此外，将研究单个测量元件之间的串扰，因为它们被放置在非结构化高阻抗压阻C/SiCX层的顶部。弯曲测试，包括拉伸和压应力的测量系数，将在室温到800°C的温度范围内进行。传感器元件的测试将与结构表征相结合，例如在机械应力下的裂纹形成及其在腐蚀性气氛中成分和厚度的演变。在后续的项目中，硅悬臂实验的结果可以转移到具有压阻C/SiCX层的背面蚀刻硅膜传感器的实际应用中。