Vertical Transparent Conductive Oxide Transistors on Flexible Substrates

点击翻译按钮获取中文摘要

The goal of the project is to realize novel oxide-based vertical transistors on flexible substrates. The devices will employ the permeable-base transistor (PBT) concept which we have successfully used for organic transistors. A main goal is to develop suitable techniques for the permeable base electrode, where different approaches to form a barrier and different deposition techniques for the base electrode will be tested. We plan to derive scaling laws in order to fabricate devices allowing for ultra-high-frequency (UHF, > 1GHz) applications. To achieve a detailed understanding of device working principles, charge carrier transport will be studied in vertical Schottky-type diodes and compared to drift-diffusion simulations. Based on the device scaling laws, we will optimize the PBT layout and the device itself regarding cut-off frequency. UHF characterization will be done for single PBT devices and an oscillator circuit including at least two integrated transistor devices.