Vertical Transparent Conductive Oxide Transistors on Flexible Substrates

柔性基板上的垂直透明导电氧化物晶体管

• 批准号: 415044933
• 负责人: Professor Dr. Karl Leo
• 金额: --
• 依托单位: Institut für Angewandte Physik (IAP)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/415044933?language=en
• 关键词: Vertical; Transparent; Conductive; Oxide; Transistors

The goal of the project is to realize novel oxide-based vertical transistors on flexible substrates. The devices will employ the permeable-base transistor (PBT) concept which we have successfully used for organic transistors. A main goal is to develop suitable techniques for the permeable base electrode, where different approaches to form a barrier and different deposition techniques for the base electrode will be tested. We plan to derive scaling laws in order to fabricate devices allowing for ultra-high-frequency (UHF, > 1GHz) applications. To achieve a detailed understanding of device working principles, charge carrier transport will be studied in vertical Schottky-type diodes and compared to drift-diffusion simulations. Based on the device scaling laws, we will optimize the PBT layout and the device itself regarding cut-off frequency. UHF characterization will be done for single PBT devices and an oscillator circuit including at least two integrated transistor devices.

该项目的目标是在柔性衬底上实现新型氧化物基垂直晶体管。这些器件将采用我们已成功用于有机晶体管的可渗透基极晶体管（PBT）概念。主要目标是开发用于可渗透基础电极的合适技术，其中将测试形成屏障的不同方法和用于基础电极的不同沉积技术。我们计划推导出比例律，以便制造允许超高频（UHF，> 1GHz）应用的器件。为了详细了解器件的工作原理，将在垂直肖特基二极管中研究电荷载流子输运，并与漂移扩散模拟进行比较。基于器件的比例定律，我们将优化PBT布局和器件本身的截止频率。UHF特性将对单个PBT器件和包括至少两个集成晶体管器件的振荡器电路进行表征。