Study on Irradiation Effects of Semiconductors by Measurement of Deep Level Defect

深能级缺陷测量研究半导体辐照效应

• 批准号: 03452301
• 负责人: KIMURA Itsuro
• 金额: $ 3.97万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452301/
• 关键词: Semiconductor; Radiation Damage; Neutron Transmutation; Lattice Defect; Capacitance Trangent Spectroscopy; Rutherford Back Scattering; Channeling; ラザフォ-ド後方散乱法

1. Seven kinds of silicon wafers with different oxygen concentration and with different production processes were irradiated by neutrons with different energy spectra, i.e., at pneumatic tube facility and thermal column facility of Kyoto University Research Reactor Institute, and at the fast neutron source of YAYOI (Nuclear Engineering Research Laboratory, University of Tokyo). The resistivities of the irradiated silicon wafers were measured by four probe method. The energy levels and their concentrations were measured at 90K to 350K by the semiconductor impurity measuring system. With these measurements, thermal neutron, which was taken as ineffective for the production of the lattice defects, was found effective. A lattice defect with unfamiliar energy level was observed.2. Oxygen ions and silicon ions were injected into silicon wafers by using tandem accelerator of Department of Engineering, Kyoto University. The concentration of the produced lattice defects were observed by the channeling method : low concentration defect with no irradiation dose dependence at the surface and high concentration defect with strong dependence on dose at the end of ion range. A model was developed which included the recombination, diffusion of point defects, production of defect clusters and amorphous and their accumulation. With model calculations, the defects at the surface were shown as point defects, and at the end of range as amorphous defects.

1. 在京都大学研究堆研究所的气动管设施和热柱设施以及YAYOI（东京大学核工程研究实验室）的快中子源处，用不同能谱的中子辐照了7种不同氧浓度和不同生产工艺的硅片。采用四探针法测量辐照硅片的电阻率。通过半导体杂质测量系统在90K至350K下测量能级及其浓度。通过这些测量，热中子被认为对产生晶格缺陷无效，但被发现是有效的。观察到具有陌生能级的晶格缺陷。 2．使用京都大学工学部的串联加速器将氧离子和硅离子注入硅片。通过沟道法观察产生的晶格缺陷的浓度：表面处不具有照射剂量依赖性的低浓度缺陷和离子范围末端处的剂量依赖性强的高浓度缺陷。开发了一个模型，其中包括点缺陷的重组、扩散、缺陷簇和非晶的产生及其积累。通过模型计算，表面缺陷显示为点缺陷，范围末端显示为非晶缺陷。

项目成果

神野 郁夫: "シリコン表面障壁型半導体検出器のエネルギー応答特性" 研究会「放射線検出器とその応用」要旨論文集UTNL-R0288. 20-23 (1993)

Ikuo Jinno：“硅表面势垒半导体探测器的能量响应特性”研究组“辐射探测器及其应用”摘要集UTNL-R0288（1993）。

Ikuo Kanno: "Recombination Effect as Component of Residual Defect in Silicon Surface Barrier Detector" Journal of Nuclear Science and Tachnology. 29. 690-694 (1992)

Ikuo Kanno：“复合效应作为硅表面势垒探测器中残余缺陷的组成部分”核科学与技术杂志。

Ikuo Kanno: "Electric Field Dependent Effect of Residual Defect in Silicon Surface Barrier Detector" Journal of Nuclear Science and Technologyへ投稿中.

菅野郁夫：“硅表面势垒探测器中残余缺陷的电场相关效应”提交给核科学与技术杂志。

Ikuo Kanno: "Energy Response of Silicon Surface Barrier Detector" UTNL-R. 0288. 20-23 (1993)

Ikuo Kanno：“硅表面势垒探测器的能量响应”UTNL-R。

Ikuo Kanno: "Feasibility Study of Silicon Surface Barrier Detector as Charged Particle Identifier" Journal of Nuclear Science and Technology. 28. 1061-1064 (1991)

菅野郁夫：“硅表面势垒探测器作为带电粒子识别器的可行性研究”核科学与技术杂志。