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Study on Irradiation Effects of Semiconductors by Measurement of Deep Level Defect

深能级缺陷测量研究半导体辐照效应

基本信息

批准号：
03452301
负责人：
KIMURA Itsuro
金额：
$ 3.97万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

1. Seven kinds of silicon wafers with different oxygen concentration and with different production processes were irradiated by neutrons with different energy spectra, i.e., at pneumatic tube facility and thermal column facility of Kyoto University Research Reactor Institute, and at the fast neutron source of YAYOI (Nuclear Engineering Research Laboratory, University of Tokyo). The resistivities of the irradiated silicon wafers were measured by four probe method. The energy levels and their concentrations were measured at 90K to 350K by the semiconductor impurity measuring system. With these measurements, thermal neutron, which was taken as ineffective for the production of the lattice defects, was found effective. A lattice defect with unfamiliar energy level was observed.2. Oxygen ions and silicon ions were injected into silicon wafers by using tandem accelerator of Department of Engineering, Kyoto University. The concentration of the produced lattice defects were observed by the channeling method : low concentration defect with no irradiation dose dependence at the surface and high concentration defect with strong dependence on dose at the end of ion range. A model was developed which included the recombination, diffusion of point defects, production of defect clusters and amorphous and their accumulation. With model calculations, the defects at the surface were shown as point defects, and at the end of range as amorphous defects.

1.用不同能谱的中子辐照七种不同氧浓度和不同生产工艺的硅片，在京都大学研究反应堆研究所的气动管设施和热柱设施，以及在YAYOI（东京大学核工程研究实验室）的快中子源。用四探针法测量了辐照硅片的电阻率。用半导体杂质测量系统测量了90 ~ 350 K的能级及其浓度。通过这些测量，发现热中子是有效的，而热中子被认为对晶格缺陷的产生是无效的。发现了一个不熟悉能级的晶格缺陷.利用京都大学工学部的串列加速器，将氧离子和硅离子注入到硅晶片中。用沟道法观察了产生的晶格缺陷的浓度：在表面处为低浓度缺陷，与辐照剂量无关;在离子射程末端处为高浓度缺陷，与辐照剂量有很强的依赖关系。建立了一个包括点缺陷复合、扩散、缺陷团和非晶的产生及其积累的模型。通过模型计算，在表面的缺陷被显示为点缺陷，并且在范围的末端被显示为非晶缺陷。