Investigation of Visible Light Emission From GaP/AlGaP Type II Heterostructures

GaP/AlGaP II 型异质结构可见光发射的研究

• 批准号: 9705094
• 负责人: Pallab Bhattacharya
• 金额: $ 5万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-02-15 至 1998-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9705094&HistoricalAwards=false
• 关键词: Investigation; Visible; Light; Emission; GaP

9705094 Bhattacharya It is apparent that a new class of quantum wells, formed with indirect-indirect heterostructures, give highly efficient luminescence in the visible region of the optical spectrum. In spite of the staggered type II lineup in these heterostructures a sufficient overlap of the electron and hole wavefunctions can be engineered by appropriate confining layers on either side of the quantum wells. Preliminary experiments with AIP/AIO.6GaO.4P quantum wells grown on GaP substrates by metalorganic vapor epitaxy have been carried out by the author. In addition to a strong no-phonon emission near green, a very strong emission is observed near orange. The emission is believed to be from the (- point in the quantum well and can be shifted to longer wavelengths by changing the material parameters. The P.I. will engineer the bandgap of the heterostructures to shift the dominant luminescence peak into the blue region. ***

很明显，用间接-间接异质结构形成的一类新的量子威尔斯在光谱的可见光区给出了高效的发光。 尽管在这些异质结构中交错的II型排列，但是可以通过在量子威尔斯的任一侧上的适当限制层来设计电子和空穴波函数的充分重叠。 作者进行了用金属有机物气相外延法在GaP衬底上生长AIP/AlO·6 GaO·4P量子威尔斯阱的初步实验。 除了在绿色附近观察到强的非声子发射之外，在橙子附近观察到非常强的发射。 发射被认为是从量子阱中的（-点，并且可以通过改变材料参数而转移到更长的波长。 私家侦探将设计异质结构的带隙以将主要发光峰移动到蓝色区域中。 ***