Investigation of Visible Light Emission From GaP/AlGaP Type II Heterostructures

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9705094 Bhattacharya It is apparent that a new class of quantum wells, formed with indirect-indirect heterostructures, give highly efficient luminescence in the visible region of the optical spectrum. In spite of the staggered type II lineup in these heterostructures a sufficient overlap of the electron and hole wavefunctions can be engineered by appropriate confining layers on either side of the quantum wells. Preliminary experiments with AIP/AIO.6GaO.4P quantum wells grown on GaP substrates by metalorganic vapor epitaxy have been carried out by the author. In addition to a strong no-phonon emission near green, a very strong emission is observed near orange. The emission is believed to be from the (- point in the quantum well and can be shifted to longer wavelengths by changing the material parameters. The P.I. will engineer the bandgap of the heterostructures to shift the dominant luminescence peak into the blue region. ***