Investigation of Visible Light Emission From GaP/AlGaP Type II Heterostructures

很明显，一类由间接-间接异质结构形成的新型量子阱在光谱的可见区域具有高效率的发光。尽管这些异质结构中存在交错的II型排列，但可以通过在量子阱两侧适当的限制层来设计电子和空穴波函数的充分重叠。AIP/AIO.6GaO的初步实验。作者利用金属有机气相外延在GaP衬底上生长了4P量子阱。除了在绿色附近有很强的无声子发射外，在橙色附近也观察到很强的发射。该发射被认为来自量子阱中的(-点，可以通过改变材料参数转移到更长的波长。P.I.将设计异质结构的带隙，将主要发光峰转移到蓝色区域。＊＊＊

9705094 Bhattacharya It is apparent that a new class of quantum wells, formed with indirect-indirect heterostructures, give highly efficient luminescence in the visible region of the optical spectrum. In spite of the staggered type II lineup in these heterostructures a sufficient overlap of the electron and hole wavefunctions can be engineered by appropriate confining layers on either side of the quantum wells. Preliminary experiments with AIP/AIO.6GaO.4P quantum wells grown on GaP substrates by metalorganic vapor epitaxy have been carried out by the author. In addition to a strong no-phonon emission near green, a very strong emission is observed near orange. The emission is believed to be from the (- point in the quantum well and can be shifted to longer wavelengths by changing the material parameters. The P.I. will engineer the bandgap of the heterostructures to shift the dominant luminescence peak into the blue region. ***