Fabrication of quantum dots with visible light emission and study of its stimulated emission

可见光发射量子点的制备及其受激发射研究

• 批准号: 09450119
• 负责人: SUEMUNE Ikuo
• 金额: $ 9.02万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450119/
• 关键词: blue semiconductor lasers; quantum dots; blue-shift; nanolithography; AFM; selective growth; MOMBE; MOVPE

The special type of the density of states in quantum dots and wires are expected to have the capability to improve the performance of semiconductor lasers. The researches toward this direction are now mainly promoted on the infrared InGaAS systems. However for the applications such as the high-density optical information processing and storage and also for increasing the absorption coefficient of Silicon photodetectors to have small integrated photonic devices in optoelectronic integrated circuits, visible and especially short wavelength semiconductor lasers with high performance and high efficiency are necessary. Excitons and excitonic molecules confined in quantum dots are predicted to have the large oscillator strength or large optical gain. Therefore if such a situation is prepared with wide bandgap semiconductors with their large exciton binding energies, the possibility to realize such a high-performance short wavelength lasers will be high.In this project, CdSe, ZnSe, CdS wide b … More andgapsemiconductor quantum dots were studied. The instability due to the Ostwald ripening in CdSe dots, much higher stability in ZnSe and CdS quantum dots, the blue shift of the light emission in ZnSe quantum dots due to the quantum confinement effect, the study of the type II band lineup in CdS/ZnSe heterostructures, the role of the energy conservation in the energy relaxation processes in the CdS quantum dots during the longitudinal optical phonon emission were studied. It was also shown that CdS/ZnMgCdS heterostructures are type I and this will prove to be effective to have the higher luminescence efficiency. For the purpose of realizing the strong coupling between the quantum dots and the optical field, AFM nanolithography was developed and the fabrication of quantum dot array with the period of 100nm could be fabricated. The stimulated emission based on these structures are now under study, but the stimulated emission in doped GaN was observed in the ultra-violet wavelength region. Less

量子点和量子线中的特殊态密度有望提高半导体激光器的性能。这方面的研究目前主要在红外InGaAS系统上进行。然而，对于诸如高密度光信息处理和存储的应用，以及为了提高硅光电探测器的吸收系数以在光电集成电路中具有小型集成光子器件，需要高性能和高效率的可见光特别是短波长半导体激光器。量子点中的激子和激子分子具有很大的振子强度和光学增益。因此，如果用具有大激子结合能的宽带隙半导体材料来制备这种情况，那么实现这种高性能短波长激光器的可能性就很大B ...更多信息 和Gap半导体量子点。研究了CdSe量子点中Ostwald熟化引起的不稳定性、ZnSe和CdS量子点中更高的稳定性、量子限制效应引起的ZnSe量子点发光的蓝移、CdS/ZnSe异质结构中的Ⅱ型带列的研究、能量守恒在CdS量子点中纵向光学声子发射的能量弛豫过程中的作用。CdS/ZnMgCdS异质结构为I型结构，这将被证明是有效的，具有较高的发光效率。为了实现量子点与光场的强耦合，发展了原子力显微镜纳米光刻技术，可以制作出周期为100 nm的量子点阵列。基于这些结构的受激发射现在正在研究中，但在掺杂GaN中观察到的受激发射在紫外波长区域。少

项目成果

M.Arita, I.Suemune, et.el.: "Self-Organized CdSe Quantum Dots on (100) ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy." Jpn.J.Appl.Phys.Vol.36 No.6B. 4097-4101 (1997)

M.Arita、I.Suemune 等人：“通过金属有机分子束外延生长在 (100) ZnSe/GaAs 表面上自组织 CdSe 量子点”。

A. Ueta: "Fabrication of Selectively Grown II-VI Widegap Semiconductor Photonic Dots on (001) GaAs with MOMBE"J. Cryst. Growth. 209. 518-521 (2000)

A. Ueta：“利用 MOMBE 在 (001) GaAs 上选择性生长 II-VI 宽禁带半导体光子点”J。

I.Suemune,A.Ueta, et al.: "semiconductor Optical Dots : Visible-Warelength-Sized Optical Resonators." Appl.Phys.Lett.Vol.74 No.14. (1999)

I.Suemune、A.Ueta 等人：“半导体光学点：可见光波长大小的光学谐振器”。

A.Ueta: "Nucleation and Faceting in Selectively Grown 2nS Pyramiclal Dot Array for Short-wavelength Light Emitters"Jpn.J.Appl.Phys.. 38,7A. L710-L713 (1999)

A.Ueta：“用于短波长光发射器的选择性生长的 2nS 锥体点阵列中的成核和刻面”Jpn.J.Appl.Phys.. 38,7A。

A. Ueta: "Enhancement of Spontaneous Emission by ZnS-based II-VI Semiconductor Photonic Dots"J.Cryst.Growth. (印刷中).

A. Ueta：“ZnS 基 II-VI 半导体光子点增强自发发射”J.Cryst.Growth。