Research on photon recycling lasers

光子回收激光器的研究

• 批准号: 05650016
• 负责人: SAKAI Shiro
• 金额: $ 1.34万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650016/
• 关键词: GaAs on Si; Photon recycling; Micro cavity; Dislocation; Semiconductor lasers; UCGAS; Lasers on Si; Residual stress

The main problem in growing GaAs on Si substrate is the thermal stress produced by the thermal expansion coefficient mismatch, since it significantly affects lifetime of the light emitters. We have proposed UCGAS (undercut GaAs on Si)to combat this problem, and more than 3000 hours of lifetime was demonstrated. Since a thin double-heterostructure (DH) is sandwiched in air in this structure, light produced inside DH is strongly reflected at the surface, light is absorbed in the active layr and is re-emitted from the active layr. The purposed of this research is to investigate this photon recycling effects in UCGAS and to apply this effect to light emitters on Si.As for the light emitters on Si, the research on the dislocation dynamics has been performed. The dislocation motion in GaAs on Si is monitored, in situ, while applying external stress. The dislocation is found to move for the first time. This may be applied to manipulate dislocation, since the dislocation can be artificially moved by the external stress. This technology is important, because optical devices which is smaller than the averaged spacing of the dislocation density of 10^5 cm^<-2> can be made in dislocation-free regions.As for the photon recycling experiments, we have tried to fabricate a three dimensional small sphere to confine light within that ball. The research on MOCVD growth mechanism was performed to find a suitable growth conditions to obtain sphere-shaped GaAs in a small grooves fabricated on Si substrate. We could obtain, by selecting growth condition, flat or convex surfaces affer the growth, however, a perfect sphere was not obtained.The technology developed in this research will be important not only in the application to photon recycling lasers but it also be a basic technology in fabricating optical IC's incorporating both GaAs and Si devices.

在Si衬底上生长GaAs的主要问题是由热膨胀系数失配产生的热应力，因为它显著影响发光体的寿命。我们提出了UCGAS（硅上的GaAs底切）来解决这个问题，并证明了超过3000小时的寿命。由于在该结构中薄的双异质结构（DH）被夹在空气中，所以在DH内部产生的光在表面处被强烈反射，光在有源层中被吸收并且从有源层再发射。本研究的目的是研究这种光子再循环效应在UCGAS中的应用，并将其应用于Si上的发光体。在外加应力作用下，对GaAs/Si中的位错运动进行了原位监测。首次发现位错运动。这可以应用于操纵位错，因为位错可以通过外部应力人为地移动。这项技术很重要，因为在无位错区可以制造出小于位错密度平均间距10^5 cm^2的光学器件<-2>。至于光子再循环实验，我们试图制造一个三维小球，将光限制在球内。通过对MOCVD生长机理的研究，寻找合适的生长条件，在Si衬底上制备出具有小沟槽的球形GaAs。通过选择生长条件，我们可以得到平坦或凸起的表面，但不能得到完美的球形，本研究所发展的技术不仅在光子循环激光器的应用中有重要意义，而且也是制备GaAs和Si器件的光学集成电路的基础技术。

项目成果

酒井士郎: "シリコン上集積化光源" 電子情報通信学会誌. 76. 918-922 (1993)

Shiro Sakai：“硅上集成的光源”电子、信息和通信工程师学会杂志 76. 918-922 (1993)。

Y.Naoi: "Stress Distribution and Dislocation Dynamics in GaAs Grown on Si by MOCVD" J.Crystal Growth. 145. 321-325 (1994)

Y.Naoi：“通过 MOCVD 在 Si 上生长的 GaAs 中的应力分布和位错动力学”J.Crystal Growth。

S.Sakai: "Monolithic III-V Light-Emitting Devices on Si Substrates" Fiber and Integrated Optics. 13. 31-44 (1994)

S.Sakai：“硅衬底上的单片 III-V 族发光器件”光纤和集成光学。

N.Wada: "Photoluminescence Dark Spot Dynamics in GaAs Grown on Si" Jpn.J.Appl.Phys.33. 864-868 (1994)

N.Wada：“Si 上生长的 GaAs 的光致发光暗斑动力学”Jpn.J.Appl.Phys.33。

Y.Ueta: "MOCVD Growth of GaN on III-V,Si and GaAs-Coated Si Substates" "Control of Semiconductor Interfaces",Ed.by I.Ohdomari,M.Oshima and A.Hiraki,(Elsevier,Amsterdam,1994). 477-482 (1994)

Y.Ueta：“III-V、Si 和 GaAs-Coated Si 衬底上 GaN 的 MOCVD 生长”“半导体界面的控制”，I.Ohdomari、M.Oshima 和 A.Hiraki 编辑，（爱思唯尔，阿姆斯特丹，1994 年）