Research on GaAs Optical Switches on InP Substrate

InP衬底上GaAs光开关的研究

• 批准号: 01550250
• 负责人: SAKAI Shiro
• 金额: $ 1.66万
• 依托单位: Tokushima University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550250/
• 关键词: Optical switch; Lattice mismatch; Gallium arsenide on indium phosphide; Gallium arsenide on silicon; Hetero structure; Optical waveguide; ヘテロエピタキシ-; 熱歪; 格子不整; 光方向性結合器; ガリウム砒素; インジウムリン

The optical switches operating at high frequency is required in optical computing and optical communication field. Although LiNbO_3 optical switches with on/off ratio exceeding 20 dB has already been realized, the integration of this switch with other optical devices like light sources and detectors is difficult. On the other hand, it is hard to control the accurate refractive index profile of the material system InGaAsP/InP which is important in the wavelength range of 1.3 to 1.6 mum, because the composition have to be selected to maintain the same lattice constant. AlGaAs which has the composition-independent-latitice constant is quite convenient to design the refractive index profile, however, it lacks the lattice matched substrate when it is combined with InGaAsP light sources. The purpose of this research project is to grow GaAlAs on lattice-mismatched substrate and to test its feasibility as a material for optical switches and waveguide devices. InPon which the lattice-matched In … More GaAsP/InP layers can be grown is first tried as a possible candidate to grow GaAs. Later, we used Si because the integration with other electronic devices is easy on this substrate.As a first stage of the research project, a new optical directional coupler/switch in which the two channel waveguides are integrated in the vertical direction is proposed and designed. It is shown that the superlattice waveguide have advantage to fabricate this type of the structures. A new method to reduce both defect and thermal stress in GaAs grown on Si substrate is proposed and ixperimentally demonstrated. In this new methods, the GaAs/Si interface which acts as a dislocation source is partially eliminated. The double hetro structure optical wave guides are then fabricated and its propagation characteristics are shown to agree with the theoretically calculated ones. These research results clearly demonstrate that AlGaAs grown on lattice-mismatched substrate is quite useful in fabricating various optical devices. The research will continue to demonstrate some of the new devices using lattice-mismatched-heteroepitaxy. Less

光计算和光通信领域需要高频工作的光开关。尽管开关比超过20 dB的LiNbO_3光开关已经实现，但这种开关与光源和探测器等其他光学器件的集成很困难。另一方面，很难控制材料系统InGaAsP/InP的精确折射率分布，这在1.3至1.6μm的波长范围内很重要，因为必须选择成分以保持相同的晶格常数。 AlGaAs具有与成分无关的晶格常数，非常方便设计折射率分布，但与InGaAsP光源结合时缺乏晶格匹配的衬底。该研究项目的目的是在晶格失配的衬底上生长GaAlAs，并测试其作为光开关和波导器件材料的可行性。 InPon 可以生长晶格匹配的 In … 更多 GaAsP/InP 层，它首先被尝试作为生长 GaAs 的可能候选材料。后来，我们使用了硅，因为在这种基板上很容易与其他电子器件集成。作为研究项目的第一阶段，提出并设计了一种新型光学定向耦合器/开关，其中两个通道波导在垂直方向上集成。结果表明，超晶格波导具有制造此类结构的优势。提出了一种减少硅衬底上生长的砷化镓缺陷和热应力的新方法并进行了实验证明。在这种新方法中，作为位错源的GaAs/Si界面被部分消除。然后制作了双异质结构光波导，其传播特性与理论计算的一致。这些研究结果清楚地表明，在晶格失配衬底上生长的 AlGaAs 在制造各种光学器件方面非常有用。该研究将继续展示一些使用晶格失配异质外延的新器件。较少的

项目成果

酒井 士郎: "“Si基板上のGaAsの熱歪み"" 固体物理. 25. 53-62 (1990)

Shiro Sakai：“Si 衬底上 GaAs 的热应变””固体物理 25. 53-62 (1990)。

酒井 士郎: "“ここまで来た薄膜化技術"" Quartech(財団法人四国産業技術振興センタ-). 6. 2-4 (1990)

Shiro Sakai：“迄今为止的薄膜技术”Quartech（四国工业技术振兴中心）。 6. 2-4 (1990)。

Shiro SAKAI: CRC Press., USA. "Compound Semiconductors : Growth, Processing, and Devices", 151 (1989)

Shiro SAKAI：CRC 出版社，美国。

酒井士郎: ":Stress distribution analysis in structured GaAs layers fabricated on Si substrates" Jpn.J.Appl.phys.

Shiro Sakai：“：在 Si 衬底上制造的结构化 GaAs 层中的应力分布分析”Jpn.J.Appl.phys。

Shiro SAKAI: "“LIQUID PHASE EPITAXIAL GROWTH AND LAYER PROPERTIES OF GaAs ON Si SUBSTRATES"" Bulletin of Faculty of Engineering,The University of Tokushima. 26. 27-41 (1989)

Shiro SAKAI：“Si 衬底上 GaAs 的液相外延生长和层特性””德岛大学工学部通报 26. 27-41 (1989)。