A research on characterization of GaN-related compounds and blue lasers

GaN相关化合物及蓝光激光器的表征研究

• 批准号: 07455009
• 负责人: SAKAI Shiro
• 金额: $ 3.39万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455009/
• 关键词: GaN; InGaN; Bulk GaN; Homoepitaxy; Sublimation; GaPN; Semiconductor lasers; ワイドギャップ半導体; 半金属; 秩序混晶; 青色発光素子; 窒化物半導体; 混晶

Although a blue-to UV nitride lasers were realized, many unknown problems such as the effects of very high density of dislocation, problems associated with cladding layrs and p-type layrs were still remain unsolved. The purpose of this research is to solve these problems and to establish a basis for homoepitaxial lasers utilizing III-nitrides. For these purposes, the following research topics were performed.1.Growth and characterization of GaPN alloy : An alloy of GaPN with bandgap energy in the range of 2.5-3 eV were obtained for the first time. A blue emission was obtained, but the composition control was found to depend strongly on the growth condition.2.Growth of thick GaN and bulk GaN by sublimation method : A GaN with a thickness of several tens of mum to several hundred of mum on sapphire and a bulk GaN with the size of several hundreds of mum to several mm were obtained. A technique to grow bulk GaN in the selective area on the substrate was developed, and the devices processing of the bulk GaN became possible.3.Growth of InGaN on sapphire : GaN and InGaN films were grown on sapphire by MOCVD,and the layrs were characterized. Especially, the formation mechanism of the inhomogeneity in InGaN was investigated in detail.4.Homoepitaxial growth : GaN and GaN/InGaN double-heterostructure were grown on bulk GaN by MOCVD and the grown layrs were characterized. It was found that the growth mode on the bulk substrate was very different of that on the sapphire substrate.Above research results provided the basis for fabricating nitride lasers on a bulk GaN substrate.

虽然实现了蓝光到紫外的氮化物激光器，但许多未知的问题，如非常高的位错密度的影响，与包覆层和p型层相关的问题仍然没有解决。本研究的目的是解决这些问题，并建立一个基础的同质外延激光器利用III族氮化物。为此，进行了以下研究课题。1. GaPN合金的生长和表征：首次获得了带隙能量在2.5-3 eV范围内的GaPN合金。获得了蓝色发光，但发现组分控制强烈依赖于生长条件。2.通过升华法生长厚GaN和体GaN：在蓝宝石上获得了厚度为几十μ m至几百μ m的GaN和尺寸为几百μ m至几mm的体GaN。发展了一种在衬底上选择性区域生长GaN体材料的技术，使GaN体材料的器件加工成为可能。3.蓝宝石衬底上InGaN的生长：采用MOCVD方法在蓝宝石衬底上生长了GaN和InGaN薄膜，并对其进行了表征。4.同质外延生长：采用MOCVD方法在体GaN上生长GaN和GaN/InGaN双异质结构，并对生长层进行表征。研究发现，在体衬底上的生长模式与在蓝宝石衬底上的生长模式有很大的不同，这为在体GaN衬底上制备氮化物激光器提供了依据。

项目成果

S.Kurai, Y.Naoi, T.Abe, S.Ohmi and S.Sakai: "Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method" Jpn.J.Appl.Phys.Vol.35, No.1B. L77-79 (1996)

S.Kurai、Y.Naoi、T.Abe、S.Ohmi 和 S.Sakai：“在升华法制备的块状 GaN 上生长的同质外延 GaN 的光泵受激发射”Jpn.J.Appl.Phys.Vol.35，第 35 期。

T.Yang.S.Nakajima and S.Sakai: "Electronic Structures of Wurtzite GaN,InN and their Alloy Ga_<1-x>In_xN Calculated by the Tight-Binding Method" Jpn.J.Appl.Phys.34-No.11. 5912-5921 (1995)

T.Yang.S.Nakajima 和 S.Sakai：“通过紧束缚法计算的纤锌矿 GaN、InN 及其合金 Ga_<1-x>In_xN 的电子结构”Jpn.J.Appl.Phys.34-No.。

Shiro Sakai: "Electronic structure of Ga_<1X>In_XN by the tight-binding method with nearest-neighbor s,p and d and second-neighbor s and p interactions" International Conference on Silicon Carbide and Related Materials-1995. 423-424 (1995)

Shiro Sakai：“Ga_<1X>In_XN 的电子结构，通过最近邻 s、p 和 d 以及次邻 s 和 p 相互作用的紧束缚方法”，碳化硅及相关材料国际会议 - 1995。

Shiro Sakai: "XPS Measurement of Valance Band Discontinuity at GaP/GaN Heterointerfaces" Topical Workshop on III-V Nitrides. F8- (1995)

Shiro Sakai：“GaP/GaN 异质界面价带不连续性的 XPS 测量”III-V 族氮化物专题研讨会。

H.Sato,Y.Naoi and S.Sakai: "X-ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by MOCVD" Jpn.J.Appl.Phys.(in press). (1996)

H.Sato、Y.Naoi 和 S.Sakai：“通过 MOCVD 在蓝宝石衬底上生长的 GaN 和 GaN/InGaN/GaN 双异质结构的 X 射线衍射分析”Jpn.J.Appl.Phys.（出版中）。