MATERIAL SCIENCE AND APPLICATION OF ALLOY NITRIC SEMICONDUCTORS

氮合金半导体材料科学与应用

• 批准号: 11102005
• 负责人: SAKAI Shiro
• 金额: $ 149.5万
• 依托单位: TOKUSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Specially Promoted Research
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11102005/
• 关键词: InNAs; Nitride; Narrow gap semiconductor; MOCVD; Plasma; Wide gap semiconductor; GaN; Material properties; 窒化III-V族混晶

Among III-V group, Nitrogen that is included in the second rank in the periodic table and the rest of the group V elements can produce special features. Purposes of this research are the growth of III-V-nitride and the method of utilizing this structure.A GaNP grown on sapphire is a good example, and it is the method that utilizes this porosity. The dislocation dies when they meet the other one and the total dislocation is the sum of the alive. The dislocation in the grown films can be minimized and can be as low as 10^8 cm^2. Using this approach, AlGaInN LEDs with 3 % and 6 % external efficacy are obtained for 365 nm and 370 nm wavelengths, respectively.If we consider the same approach to AlN, a bad thing can happen. The AlN is three dimensional growth modes and it cannot ridge grow. AlN can be grown under AlN/Al. By doing this, the 340 nm LEDs is developed.As long wavelength application, we considered In(As, Sb)N. A temperature used for the growth is not so good for NH_3, we used di-methly-hydrazine. As a precaution, we grow cubic GaN and InN on GaAs. InNAs was found to shrinks with its bang gap energy with the N elements by FTIR. InNSb is more difficult due to the difference in Sb and N.

在III-V族中，元素周期表中第二位的氮和其余的V族元素可以产生特殊的特征。这项研究的目的是III-V-氮化物的生长和利用这种结构的方法。蓝宝石上生长的GaNp就是一个很好的例子，它是利用这种孔洞的方法。当它们相遇时，位错就死了，而总的位错就是活着的人的总和。采用这种方法可以得到365 nm和370 nm波长的外效率分别为3%和6%的AlGaInN发光二极管。如果我们考虑同样的方法来处理AlN，可能会发生不好的事情。AlN为三维生长模式，不能脊状生长。在AlN/Al下可以生长AlN。考虑到(As，Sb)N的长波长应用，生长温度对NH_3的生长不是很好，我们采用二甲肼。作为预防措施，我们在GaAs上生长了立方GaN和InN。傅立叶变换红外光谱分析发现，InNAs随其与N元素的能带隙而收缩。由于Sb和N的不同，InNSb的难度更大。

项目成果

Jie Bai: "Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures"Jpn. J. Appl. Phys. Part1. 41・10. 5909-5911 (2002)

白杰：“金字塔缺陷对掺镁AlGaN/GaN超晶格结构的光致发光的影响”J. Phys. Part1. 5909-5911。

M.Tsukihara: "Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers"Jpn. J. Appl. Phys.. 42・4A(4月号掲載予定). (2003)

M.Tsukihara：“通过引入富含GaN的GaN中间层来减少GaN层”J.Appl. 42・4A（预定于4月号出版）。

J.J.Harris: "Phase giagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure"J.Phys.:Condens.Matter. 13. L175-L181 (2001)

J.J.Harris：“高迁移率 AlGaN/GaN 异质结构中量子霍尔效应的相图”J.Phys.:Condens.Matter。

T.Wang: "Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrate"Journal of Crystal Growth. 224. 5-10 (2001)

T.Wang：“InGaN/GaN量子阱结构对蓝宝石衬底上生长的发光二极管和激光二极管性能的影响”晶体生长杂志。

T.Wang: "Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes"Appl.Phys.Lett. 78 18. 2617-2619 (2001)

T.Wang：“InGaN/GaN基发光二极管发射机制的研究”Appl.Phys.Lett。