Research on the thermal stress and the dislocation in GaAs grown on Si substrates

Si衬底上生长的GaAs的热应力和位错研究

• 批准号: 03650018
• 负责人: SAKAI Shiro
• 金额: $ 1.34万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03650018/
• 关键词: GaAs on Si; Thermal stress; Light emitting diodes; Opto-electronic IC; Degradation; dislocation; 発光ダイオ-ド; 寿命; CaAs on Si

The thermal stress which is produced in GaAs grown on Si substrates by the thermal expansion coefficient mismatch between the two materials is known to introduce dislocation into GaAs during the cooling stage after the growth and to degrade lifetime of the light emitting devices on Si.We have proposed the new UCGAS(undercut GaAs on Si)structure to reduce the stress and the stress-induced dislocation.We have found that 1.complete stress relaxation is obtained only in the annealed UCGAS since the as-grown GaAs on Si is plastically deformed,2.the reduction in both the stress and the dislocation is obtained by growing the layer on the UCGAS.The UCGAS LED(light emitting diodes)and LD(laser diodes)were successfully fabricated,and the LED lifetime is demonstrated to be more than 3000 hours which is the longest lifetime among the GaAs LED's that are ever fabricated on the Si substrates.On the contrarily,the conventional mesa-type LED which contains high stress degrades in 30 minutes. The degradation mechanism is investigated.It was shown that the degradation is caused by the increased density of the dislocation during operation.The thermal stress relaxation is quite essential to suppress the degradation.The above findings were published in the papers listed in the reverse side of this abstract.

由于两种材料之间的热膨胀系数失配而在Si衬底上生长的GaAs中产生热应力，已知在生长后的冷却阶段将位错引入GaAs中，并且降低Si上发光器件的寿命。（底切Si上GaAs）结构以减小应力，并且应力-我们发现：1.由于Si上生长的GaAs发生塑性变形，仅在退火的UCGAS中获得完全的应力弛豫，2.通过在UCGAS上生长该层来获得应力和位错两者的减少。（发光二极管）和LD（激光二极管）被成功制造，并且LED寿命被证明超过3000小时，这是在Si衬底上制造的GaAs LED中寿命最长的。相反，包含高应力的传统台面型LED在30分钟内劣化。研究了退化机理，指出退化是由于工作过程中位错密度增加引起的，热应力松弛是抑制退化的关键，上述研究结果发表在本摘要背面的论文中。

项目成果

S.Sakai: "Selective growth of GaAs on GaAs-coated Si substrate by liquid phase electro-epitaxy" Proc.of the Mater.Res.Soc.Symp. Vol.237. 565-570 (1992)

S.Sakai：“通过液相电外延在 GaAs 涂覆的 Si 基板上选择性生长 GaAs”Proc.of the Mater.Res.Soc.Symp。

S.Sakai: "Thermal annealing effects on the defect and stress reduction in undercut GaAs on Si" Inst.Phys.Conf.Ser. No.120. 113-118 (1991)

S.Sakai：“热退火对 Si 上底切 GaAs 的缺陷和应力减少的影响”Inst.Phys.Conf.Ser。

S.Sakai: "Selective liquid-phase electroepitaxy of GaAs on GaAs-coated Si substrates" J.Appl.Phys.70. 4899-4902 (1991)

S.Sakai：“GaAs 涂覆的 Si 基板上 GaAs 的选择性液相电外延”J.Appl.Phys.70。

S.Sakai: "Selective liquid-phase electroepitaxy of GaAs on GaAs-coated Si substrates" J.Appl.Phys. Vol.70,No.9. 4899-4902 (1991)

S.Sakai：“GaAs 涂覆的 Si 基板上 GaAs 的选择性液相电外延”J.Appl.Phys。

N.Wada,K.Higashiyama,S.Sakai,S.Shintani,Y.Ueta,T.Yuasa,S.Koshiba,M.Umeno,K.Uematsu: "A New reactor for metalorganic Chemical vapor deposition equipped with an internal flow selector" Jpn.J.Appl.Phys.Vol.30,No.3A. L396-397 (1991)

N.Wada，K.Higashiyama，S.Sakai，S.Shintani，Y.Ueta，T.Yuasa，S.Koshiba，M.Umeno，K.Uematsu：“一种配备内流式金属有机化学气相沉积的新型反应器