Establishment of Film-Formation Method by lonization in TEOS-CVD Process

TEOS-CVD工艺电离成膜方法的建立

• 批准号: 05650769
• 负责人: ADACHI Motoaki
• 金额: $ 1.47万
• 依托单位: University of Osaka Prefecture
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650769/
• 关键词: CVD; Thin film; Ion-molecule reaction; Ion-induced nucleation; TEOS; Cluster ion; Nanometer-sized particle; Selective growth; ナノサイズ超微粒; TE0S; ナノ超微粒子

A new chemical vapor deposition (CVD) method named for an ionization CVD,where source molecules were ionized and deposited by electrophoresis, was proposed to develop a particle-free CVD process. Tetraethylorthosilicate (TEOS)/ozone system was used to certify the film formation by the ionization CVD method. The ionization CVD reactor for TEOS/O_3 system was built up, and the size distribution and charges of particles generated in the reactor were measured simultaneously to improve the reactor. As the results, 90% of nanometer-sized particles generated in the reactor had a negative charge, Film growth rates increased linearly with the electric intensity. It was certified from this results that the ionization CVD method can form the thin film. The FT-IR spectra of the films showed the the structure was an SIO_2 containing very small amount of a hydroxyl group, that is, a good quality film. From the results of compositional analysis of nanometer-sized particles and SEM observation of resultant films on the trenched Si substrates, the intermediate species which form films with excellent flow-like shape were found to contain relatively large amounts of ethoxy group and small amounts of hydroxyl group.

提出了一种新的化学气相沉积(CVD)方法，即电离CVD，通过电泳法将源分子电离并沉积，以开发一种无粒子的CVD工艺。采用正硅酸乙酯(TEOS)/臭氧体系对电离化学气相沉积(CVD)成膜进行了验证。建立了TEOS/O_3体系的电离化学气相沉积反应器，并对反应器内生成的粒子的尺寸分布和电荷进行了测量，对反应器进行了改进。结果表明，在反应器中生成的纳米粒子中有90%带负电荷，薄膜生长速率随着电场强度的增加而线性增加。这一结果证明了电离CVD方法可以形成薄膜。红外光谱分析表明，薄膜的结构是含有少量羟基的SiO_2，是一种高质量的薄膜。从纳米颗粒的成分分析和在硅槽衬底上生成的薄膜的扫描电子显微镜观察结果表明，形成流形良好的薄膜的中间物种含有较多的乙氧基和少量的羟基。

项目成果

M.Adachi,K.Okuyama and N.Tohge: "Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposiiton Process using Tetraethylorthosilicate" Journal of Materials Science. (印刷中).

M. Adachi、K. Okuyama 和 N. Tohge：“使用原硅酸四乙酯的大气压化学气相沉积过程中的粒子生成和成膜”《材料科学》杂志（正在出版）。

M.Adachi,K.Okuyama and N.Tohge: "Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposiiton Process using Tetraethylorthosilicate" Journal of Materials Science. 30. 932-937 (1995)

M.Adachi、K.Okuyama 和 N.Tohge：“使用原硅酸四乙酯的大气压化学气相沉积过程中的颗粒生成和薄膜形成”材料科学杂志。

M.Adachi, K.Okuyam, N.Tohge et al.: "Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System" Japanese Journal of Applied Physics. 33. L447-L450 (1994)

M.Adachi、K.Okuyam、N.Tohge 等人：“原硅酸四乙酯/臭氧系统中二氧化硅薄膜的大气压化学气相沉积中的前体”日本应用物理学杂志。

M.Adachi,K.Okuyama,N.Tohge et al.: "Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System" Japanese Journal of Applied Physics. 33. L447-L450 (1994)

M.Adachi、K.Okuyama、N.Tohge 等人：“原硅酸四乙酯/臭氧系统中二氧化硅薄膜的大气压化学气相沉积前体”，日本应用物理学杂志。

M.Adachi,K.Okuyama N.Tohge et al.: "Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System" Japanese Journal of Applied Physics. 33. L447-L450 (1994)

M.Adachi、K.Okuyama N.Tohge 等人：“原硅酸四乙酯/臭氧系统中二氧化硅薄膜的大气压化学气相沉积中的前体”日本应用物理学杂志。