Establishment of Film-Formation Method by lonization in TEOS-CVD Process

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A new chemical vapor deposition (CVD) method named for an ionization CVD,where source molecules were ionized and deposited by electrophoresis, was proposed to develop a particle-free CVD process. Tetraethylorthosilicate (TEOS)/ozone system was used to certify the film formation by the ionization CVD method. The ionization CVD reactor for TEOS/O_3 system was built up, and the size distribution and charges of particles generated in the reactor were measured simultaneously to improve the reactor. As the results, 90% of nanometer-sized particles generated in the reactor had a negative charge, Film growth rates increased linearly with the electric intensity. It was certified from this results that the ionization CVD method can form the thin film. The FT-IR spectra of the films showed the the structure was an SIO_2 containing very small amount of a hydroxyl group, that is, a good quality film. From the results of compositional analysis of nanometer-sized particles and SEM observation of resultant films on the trenched Si substrates, the intermediate species which form films with excellent flow-like shape were found to contain relatively large amounts of ethoxy group and small amounts of hydroxyl group.