Control of gas phase reactions in low pressure chemical vapor deposition film formation process

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The low-pressure ionization CVD film formation process was developed. The UV/photoelectron emission and corona discharge methods were used as the ion source at low pressures. Tetraethylorthosilicate (TEOS)/O_3 LPCVD films were prepared from ionized TEOS/O_3 mixtures and their morphologies were observed to investigate effects of ionization on film formation. Following results were obtained.(1)The cold wall type low-pressure CXTD reactor was built.(2)For UV/photoelectron emission method, a low pressure mercury lamp and a KrF excimer laser were used as a UV source and metals films of many kinds were used as a photoelectron emitter.(3)When a Au film was irradiated by UV rays from a low pressure mercury lamp, the photoelectron generation was most stable.(4)When a KrF excimer laser was used as a UV source, the electrons generated with high density but the density reduced quickly with time.(5)When TEOS/O_3 LPCVD films prepared using photoelectron emission from Au film by a low pressure mercury lamp, the film growth rates increased 20%.(6)A sonic-jet ionizer using corona discharge was developed to feed the high density ions to low pressure chamber.(7)The ion density produced by the sonic-jet ionizer was more than 10^<10> cm^<-3>.(8)When TEOS/O_3 LPGVD films were prepared using the sonic-jet ionizer, the film growth rates increased 10 times and the gap filling and substrate dependence of films were, improved but the flow shape did not appear.