Development of Particle-free CVD Reactor Using Ionization of source Gas

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The low pressure chemical vapor deposition reactor using ionization of source gas was developed to control particle generation in gas phase. UV/photoelectron method, in which photoelectron was released from the emitter by UV irradiation, was used as the ion source to produce ions at low pressure. From many materials such as metal, metal oxide, semiconductor, and alloy, Au thin film deposited by the spattering was selected as the photoelectron emitter because of the stability of photoelectron emission at low pressure. The highest concentration of photoelectron was released from Au film in the range of UV wave length shorter than 200 um. The low pressure differential mobility analyzer/Faraday cup electrometer system was also developed to measure the particle generation in LPCVD reactor. The film formation and particle generation from TEOS and OィイD23ィエD2 in the developed CVD reactor was estimated experimentally. Film growth rate and particle generation increased 20-50% and decreased 20-80%, respectively, by the UV irradiation. The shape of film deposited on the trenched wafer showed a conformal growth in both cases of UV irradiation and non-irradiation, but did not a flow like shape which was formed by the ionization of TEOS in TEOS/OィイD23ィエD2-APCVD.