Development of Particle-free CVD Reactor Using Ionization of source Gas

利用源气体电离开发无颗粒 CVD 反应器

• 批准号: 09555240
• 负责人: ADACHI Motoaki
• 金额: $ 5.5万
• 依托单位: Osaka Prefecture University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555240/
• 关键词: Low pressure CVD; Thin film; Ion cluster; UV excitation; Photoelectron emission; Ionization; TEOS; Particle generation; 無発塵

The low pressure chemical vapor deposition reactor using ionization of source gas was developed to control particle generation in gas phase. UV/photoelectron method, in which photoelectron was released from the emitter by UV irradiation, was used as the ion source to produce ions at low pressure. From many materials such as metal, metal oxide, semiconductor, and alloy, Au thin film deposited by the spattering was selected as the photoelectron emitter because of the stability of photoelectron emission at low pressure. The highest concentration of photoelectron was released from Au film in the range of UV wave length shorter than 200 um. The low pressure differential mobility analyzer/Faraday cup electrometer system was also developed to measure the particle generation in LPCVD reactor. The film formation and particle generation from TEOS and OィイD23ィエD2 in the developed CVD reactor was estimated experimentally. Film growth rate and particle generation increased 20-50% and decreased 20-80%, respectively, by the UV irradiation. The shape of film deposited on the trenched wafer showed a conformal growth in both cases of UV irradiation and non-irradiation, but did not a flow like shape which was formed by the ionization of TEOS in TEOS/OィイD23ィエD2-APCVD.

为控制气相颗粒的生成，研制了利用源气电离的低压化学气相沉积反应器。紫外/光电子法是利用紫外辐照从发射极释放光电子作为离子源，在低压下产生离子。在金属、金属氧化物、半导体和合金等多种材料中，由于在低压下光电子发射的稳定性，选择了通过溅射沉积的金薄膜作为光电子发射体。在紫外波长小于200 um的范围内，金薄膜释放出的光电子浓度最高。开发了低压差迁移率分析仪/法拉第杯静电计系统，用于LPCVD反应器中粒子生成的测量。膜的形成和粒子生成的teo和Oィイc15ィエD2发达CVD反应器估计实验。紫外线照射可使膜生长速率提高20 ~ 50%，颗粒生成量降低20 ~ 80%。薄膜沉积在切入晶圆的形状显示保形增长在这两种情况下的紫外线照射和non-irradiation,但没有一个像的形状是由电离的teo teo / Oィイc15ィエD2-APCVD。

项目成果

M. Adachi, T. Fujimoto, Y. Itoh and K. Okuyam: "Numerical Simulation of Films Formed by Cluster/particle Dposition in Aimospheric Pressure Chemical Vapor Deposition Process Using Organic Slilcon Vapors and Ozone Gas"Jpn. J. Appl. Phys.. 39(印刷中). (2000)

M. Adachi、T. Fujimoto、Y. Itoh 和 K. Okuyam：“使用有机硅蒸气和臭氧气体在大气压力化学气相沉积过程中通过簇/颗粒沉积形成的薄膜的数值模拟”J. Appl。 39（正在出版）（2000）。

M.Adachi, T.Fujimoto, Y.Itoh and K.Okuyama: "Numerical Simulation of Films Formed by Cluster/Particle Deposition in Atmospheric Pressure Chemical Vapor Deposition Process Using Organic Silicon Vapors and Ozone Gas."Jpn. J. Appl. Phys.. 39-6 (in press). (2

M.Adachi、T.Fujimoto、Y.Itoh 和 K.Okuyama：“使用有机硅蒸气和臭氧气体在大气压化学气相沉积过程中通过团簇/颗粒沉积形成的薄膜的数值模拟。”Jpn。

Fujimoto, K. Okuyama, S. Yamada and M. Adachi: "Effect of Cluster/Particle Deposition on Atmospheric Pressure Chemical Vapor Deposition of SiO_2 from Four Gaseous Organic Si-containing Precursors and Ozone"J. Appl. Phys.. 85. 4196-4206 (1999)

Fujimoto、K. Okuyama、S. Yamada 和 M. Adachi：“团簇/颗粒沉积对四种气态有机含硅前体和臭氧中 SiO_2 常压化学气相沉积的影响”J。

足立元明、奥山喜久夫: "新版 シリコンウェーハ表面の超クリーン化技術"服部毅編 リアライズ社. 526 (2000)

Motoaki Adachi、Kikuo Okuyama：“新版：硅晶圆表面的超洁净技术”，服部刚编辑，Realize Inc. 526 (2000)

M.Adachi,T.Hayashi,T.Fujimoto and K.Okuyama: "Film Formation by a New CVD Process using Ionization of TEOS" Proceedings of the Fourteenth International Conference on Chemical Vapor Deposition and EUROCVD-11. 97-25. 1160-1166 (1997)

M.Adachi、T.Hayashi、T.Fujimoto 和 K.Okuyama：“利用 TEOS 电离的新型 CVD 工艺形成薄膜”第十四届化学气相沉积和 EUROCVD-11 国际会议论文集。