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Terahertz Emission Spectroscopy of Hot Electron Systems in Semiconductor Heterostructures

半导体异质结构中热电子系统的太赫兹发射光谱

基本信息

批准号：
06452104
负责人：
HIRAKAWA Kazuhiko
金额：
$ 2.82万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452104/
关键词：
Terahertz light Far-infrared lingt semiconductor heterostructure Plasmon Hot electron Garium Arsenide Ultra short a lifeti photoconductor Dipole anntena 遠赤外光ガリウムム素

项目摘要

Application of strong external electric fields to the high-mobility low dimensional electron systems in semiconductor heterostructures and quantum wire structures results in a rapid rise in electron temperature as well as a drastic reduction of electron mobility. Such "hot carrier" phenomena are one of the most important issues in practical device applications.The combination of a broadband terahertz (THz) detector and a magnetic-field tuned cyclotron resonance filter allows us a unique opportunity for a spectroscopic as well as an absolute intensity analysis of weak THz radiation from semiconductor devices. In this work, we have utilized this technique as a tool for a diagnosis of "hot carrier" phenomena in semiconductors and studied the broadband THz radiation from hot low-dimensional electrons in smiconductor nanostructures. From its spectral line shape the observed broadband THz radiation was identified as the blackbody radiation from the hot electron systems. This fact enabled us to successfully determine the effective blackbody temperature (or the thermodynamic temperature) of the hot electron systems, T_e in a wide temperature range (-5K to-100K) when the lattice temperature was kept at 4.2K.The behavior of T_e is quantitatively explained by a theory of acoustic and optical phonon emission.

在半导体异质结构和量子线结构中的高迁移率低维电子系统中施加强外电场会导致电子温度的迅速升高和电子迁移率的急剧降低。这种“热载流子”现象是实际器件应用中最重要的问题之一。宽带太赫兹（THz）探测器和磁场调谐回旋共振滤波器的组合为我们提供了一个独特的机会，可以对半导体器件的弱太赫兹辐射进行光谱分析和绝对强度分析。在这项工作中，我们利用该技术作为诊断半导体中“热载流子”现象的工具，并研究了半导体纳米结构中热低维电子的宽带太赫兹辐射。从其谱线形状可以确定观测到的宽带太赫兹辐射是来自热电子系统的黑体辐射。这一事实使我们能够成功地确定热电子系统的有效黑体温度（或热力学温度），当晶格温度保持在4.2K时，T_e在宽温度范围内（-5K至100k）。用声子发射理论和光声子发射理论定量地解释了T_e的行为。