Ultrafast carrier dynamics in the 10fs-time range probed by time-domain terahertz emission spectroscopy
通过时域太赫兹发射光谱探测 10fs 时间范围内的超快载流子动力学
基本信息
- 批准号:12450140
- 负责人:
- 金额:$ 8.58万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In ultrafast transistors with cutoff frequencies higher than 500 GHz, carriers are expected to travel in the channel in a very nonstationary manner. It is, therefore, essential to understand nonequilibrium transport of carriers subjected to high electric fields. The aim of this study was to make a quantitative comparison between the nonequilibrium transport data obtained by the time-domain THz spectroscopy and ensemble Monte Carlo (EMC) results and extract intrinsic carrier transport properties. It is found that the experimental results are strongly affected by finite sample thickness. Furthermore, the contribution of holes to the THz signal is found to become significant when the acceleration field is greater than 20 kV/cm. When the sample geometries and the photoexcitation conditions were property taken into account, the agreement between the THz data and the EMC calculations was good.Furthermore, we have also investigated the quantum mechanical transport in quantum heterostructures. … More Since the first proposal of Bloch oscillators by Esaki and Tsu, considerable effort from both experiments and theories has been made to search for Bloch oscillations and obtain terahertz (THz) emission. Even after three decades from the proposal, however, THz Bloch oscillators have not been realized yet It is, therefore, of prime importance to establish an understanding of the dynamical electron motion in the THz regime.In this work, we obtained a strong experimental support for the THz gain due to Bloch oscillating electrons in wide miniband GaAs/Al_<0.3>Ga_<0.7>/As SLs. For determining the high-frequency electron conductivity in SL minibands, we proposed a totally new approach, by noting that the time-domain THz spectroscopy inherently measures the step-response of the electron system to the applied bias electric field and that the Fourier spectra of the THz emission is closely related with the high-frequency electron conductivity. The Fourier spectra of the emitted THz electromagnetic wave were compared with the predicted conductivity spectra. The excellent agreement between theory and experiment strongly suggests that the THz gain due to Bloch oscillating electrons persists at least up to 1.7THz. Less
在截止频率高于500 GHz的超快晶体管中,预计载流子将以非常不稳定的方式在沟道中行进。因此,理解高电场下载流子的非平衡输运是非常必要的。本研究的目的是将时域太赫兹光谱获得的非平衡输运数据与系综蒙特卡罗(EMC)结果进行定量比较,并提取本征载流子输运性质。实验结果表明,有限的样品厚度对实验结果有很大的影响。当加速场大于20 kV/cm时,空穴对THz信号的贡献变得显著.当考虑样品的几何形状和光激发条件时,THz数据与EMC计算结果吻合较好。此外,我们还研究了量子异质结构中的量子力学输运。 ...更多信息 自江崎和大津首次提出布洛赫振荡器以来,人们从实验和理论两方面对布洛赫振荡进行了大量的研究,并获得了太赫兹辐射。然而,从提出到现在已经过去了30年,太赫兹布洛赫振荡器还没有被实现。因此,建立对太赫兹区电子动力学运动的理解是至关重要<0.3>的<0.7>。为了确定SL微带中的高频电子电导率,我们提出了一种全新的方法,注意到时域太赫兹光谱固有地测量电子系统对外加偏置电场的阶跃响应,并且太赫兹发射的傅立叶光谱与高频电子电导率密切相关。发射的太赫兹电磁波的傅立叶谱与预测的电导率谱进行了比较。理论和实验之间的良好一致性强烈表明,由于布洛赫振荡电子的太赫兹增益至少持续到1.7THz。少
项目成果
期刊论文数量(133)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.-W.Lee, K.Hirakawa, Y.Shimada: "Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded In Modulation Doped GaAs Quantum Wells"MRS Symposia Proceedings. Vol.607 Infrared. 147-152 (2000)
S.-W.Lee、K.Hirakawa、Y.Shimada:“使用嵌入调制掺杂 GaAs 量子阱中的自组装 InAs 量子点的中红外光电探测器”MRS 研讨会论文集。
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Ph. Lelong, S. -W. Lee, K. Hirakawa, and H. Sakaki: "Fano profile in intersubband transitions in InAs quantum dots"Physica E. 7. 174-178 (2000)
勒隆博士,S.-W。
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O. Astafiev, S. Komiyama, T. Kutsuwa, V. Antonov, Y. Kawaguchi, and K. Hirakawa: "Single photon detector in the microwave range"Applied Physics Letters. 80, No.22. 4250-4252 (2002)
O. Astafiev、S. Komiyama、T. Kutsuwa、V. Antonov、Y. Kawaguchi 和 K. Hirakawa:“微波范围内的单光子探测器”应用物理快报。
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- 影响因子:0
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Y.Shimada, T.Matsuo, K.Hirakawa: "Thz Emission due to Miniband Transport in GaAs/AlGaAs Superlattices"Japanese Journal of Applied Physics. vol.40, No.4B. 3009-3010 (2001)
Y.Shimada、T.Matsuo、K.Hirakawa:“GaAs/AlGaAs 超晶格中微带传输引起的太赫兹发射”日本应用物理学杂志。
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- 影响因子:0
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- 通讯作者:
Ph.Lelong,K.Hirakawa,K.Hirotani,S.-W.Lee,and H.Sakaki: "Fano profiles in bound-to-continuum intersubband transitions in negatively charged InAs quantum dots"Proceedings of the 25th International Conference on the Physics of Semiconductors. (印刷中).
Ph.Lelong、K.Hirakawa、K.Hirotani、S.-W.Lee 和 H.Sakaki:“带负电荷的 InAs 量子点中束缚到连续谱间子带跃迁的 Fano 剖面”第 25 届国际会议论文集半导体物理学(正在出版)。
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HIRAKAWA Kazuhiko其他文献
HIRAKAWA Kazuhiko的其他文献
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{{ truncateString('HIRAKAWA Kazuhiko', 18)}}的其他基金
Physics and applications of strong coupling beitnweternsublevel transitions in semiconductor heterostructures and electromagnetic waves in terahertz resonators
半导体异质结构亚能级跃迁与太赫兹谐振器电磁波强耦合物理及应用
- 批准号:
22241036 - 财政年份:2010
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Physics and applications of terahertz dynamics of quantum nanostructures
量子纳米结构太赫兹动力学物理及应用
- 批准号:
18201027 - 财政年份:2006
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Investigation of dynamical conductivity in quantum nanostructures by time-domain terahertz spectroscopy
通过时域太赫兹光谱研究量子纳米结构的动态电导率
- 批准号:
15206037 - 财政年份:2003
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
High-sensitivity mid infrared detection using photoionization of quantum dots
利用量子点光电离的高灵敏度中红外检测
- 批准号:
13555104 - 财政年份:2001
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Electron dynamics in semiconductor quantum structures investigated by time-resolved terahertz spectrosccopy
通过时间分辨太赫兹光谱研究半导体量子结构中的电子动力学
- 批准号:
09450138 - 财政年份:1997
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Ultrahigh-sensitivity far infrared photodetectors by using the quantum Hall effect
利用量子霍尔效应的超高灵敏度远红外光电探测器
- 批准号:
09555108 - 财政年份:1997
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Terahertz Emission Spectroscopy of Hot Electron Systems in Semiconductor Heterostructures
半导体异质结构中热电子系统的太赫兹发射光谱
- 批准号:
06452104 - 财政年份:1994
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Terahertz emission from two-dimensional plasmons in semiconductor heterostructures
半导体异质结构中二维等离子体激元的太赫兹发射
- 批准号:
06555003 - 财政年份:1994
- 资助金额:
$ 8.58万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
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