Ultrahigh-sensitivity far infrared photodetectors by using the quantum Hall effect
利用量子霍尔效应的超高灵敏度远红外光电探测器
基本信息
- 批准号:09555108
- 负责人:
- 金额:$ 5.7万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1997
- 资助国家:日本
- 起止时间:1997 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
When a two-dimensional electron system (2DES) is subjected to a strong magnetic field at low temperatures, the motion of electrons are completely quantized by cyclotron motion and O-dimensional like, equi-distant energy levels (Landau levels) are formed. In such a situation, a novel phenomenon called the quantum Hall effect appears. Although the quantum Hall effect (QHE) is most often applied to resistance standards, we are pursuing a possibility of using QHE for the detection of far infrared radiation (or sometimes called terahertz radiation). The major results of this project are ;(1) We have found that the diagonal resistance of the 2DES exhibits a very large photosensitivity in the vicinity of the quantum Hall states. From the analysis of the excitation spectra, it is clarified that the photosensitivity is induced by the cyclotron resonance absorption and that there are two mechanisms in the process, i. e., (i) electron heating due to photoabsorption and (ii) modulation of edge channel transport through potential redistribution by spatial separation of photoexcited electron and holes.(2) The responsivity of the QHE detector increases linearly with increasing the bias current and reaches 10ィイD17ィエD1 V/W, which is 1000 times larger than that of conventional bolometers. Further increase of the bias current results in the reduction in responsivity due to joule heating.(3) We have found that the dominant noise of the QHE detector is the 1/f noise and that it increases very quickly with increasing the bias current. Consequently, the maximum detectivity was obtained at relatively low bias currents (-μA).(4) The overall detectivity of the QHE photodetector was estimated to be 3x10ィイD113ィエD1 HzィイD11/2ィエD1cm/W, which is approximately 50 times larger than that of conventional bolometers. This high detectivity indicates the superiority of the QHE photodetector as a ultirahigh-sensitivity far infrared photodetector.
当二维电子系统(2DES)在低温下受到强磁场作用时,电子的运动被回旋运动完全量子化,形成了类似于0维的等距能级(朗道能级)。在这种情况下,一种叫做量子霍尔效应的新现象就出现了。虽然量子霍尔效应(QHE)最常应用于电阻标准,但我们正在寻求使用量子霍尔效应检测远红外辐射(或有时称为太赫兹辐射)的可能性。本项目的主要成果有:(1)我们发现2DES的对角线电阻在量子霍尔态附近表现出非常大的光敏性。从激发光谱分析可知,光敏性是由回旋共振吸收引起的,这一过程有两种机制,即(1)光吸收引起的电子加热和(2)光激发电子与空穴的空间分离通过势重分布调制边缘通道输运。(2)随着偏置电流的增大,QHE探测器的响应度呈线性增加,达到10 μ l μ l D17 μ l μ l D1 V/W,是传统测辐射热计的1000倍。由于焦耳加热,偏置电流的进一步增加导致响应率的降低。(3)我们发现QHE检测器的主导噪声是1/f噪声,并且随着偏置电流的增加,它的增加非常快。因此,在相对较低的偏置电流(-μA)下获得了最大的检测率。(4) QHE光电探测器的总探测率估计为3 × 10 μ m/ D113 μ m/ D1 Hz μ m/ D11/2 μ m/ D1cm/W,约为传统测辐射热计的50倍。这种高探测率表明了QHE光电探测器作为超高灵敏度远红外光电探测器的优越性。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
K.Hirakawa(分担執筆): "Terahertz Spectroscopy of Semiconductor Nanostructures" Springer, 96-103 (1998)
K. Hirakawa(贡献者):“半导体纳米结构的太赫兹光谱”Springer,96-103 (1998)
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H.Sakakibara: "Interaction effects on cyclotron resonance in semiconductor double quantum well structures" Surface Science. (印刷中).
H.Sakakibara:“半导体双量子阱结构中回旋共振的相互作用效应”表面科学(正在出版)。
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S.-W.Lee: "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures"Applied Physics Letters. 75・10. 1428-1430 (1999)
S.-W.Lee:“调制掺杂异质结构中自组装 InAs 量子点的束缚到连续子带间光电导”应用物理快报 75・10(1999)。
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K.Tamura: "Drude absorption and electron localization in GaAs/AlGaAs superlattices"Physica B. 272. 183-186 (1999)
K.Tamura:“GaAs/AlGaAs 超晶格中的德鲁吸收和电子局域化”Physica B. 272. 183-186 (1999)
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N.Sekine: "Coherent and incoherent excitation of two-dimensional plasmons in AlGaAs/GaAs quantum wells by femtosecond laser pulses"Inst.Phys.Conf.Ser.. 162. 845-848 (1999)
N.Sekine:“飞秒激光脉冲对 AlGaAs/GaAs 量子阱中二维等离子体激元的相干和非相干激发”Inst.Phys.Conf.Ser.. 162. 845-848 (1999)
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HIRAKAWA Kazuhiko其他文献
HIRAKAWA Kazuhiko的其他文献
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{{ truncateString('HIRAKAWA Kazuhiko', 18)}}的其他基金
Physics and applications of strong coupling beitnweternsublevel transitions in semiconductor heterostructures and electromagnetic waves in terahertz resonators
半导体异质结构亚能级跃迁与太赫兹谐振器电磁波强耦合物理及应用
- 批准号:
22241036 - 财政年份:2010
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Physics and applications of terahertz dynamics of quantum nanostructures
量子纳米结构太赫兹动力学物理及应用
- 批准号:
18201027 - 财政年份:2006
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Investigation of dynamical conductivity in quantum nanostructures by time-domain terahertz spectroscopy
通过时域太赫兹光谱研究量子纳米结构的动态电导率
- 批准号:
15206037 - 财政年份:2003
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
High-sensitivity mid infrared detection using photoionization of quantum dots
利用量子点光电离的高灵敏度中红外检测
- 批准号:
13555104 - 财政年份:2001
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Ultrafast carrier dynamics in the 10fs-time range probed by time-domain terahertz emission spectroscopy
通过时域太赫兹发射光谱探测 10fs 时间范围内的超快载流子动力学
- 批准号:
12450140 - 财政年份:2000
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Electron dynamics in semiconductor quantum structures investigated by time-resolved terahertz spectrosccopy
通过时间分辨太赫兹光谱研究半导体量子结构中的电子动力学
- 批准号:
09450138 - 财政年份:1997
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Terahertz Emission Spectroscopy of Hot Electron Systems in Semiconductor Heterostructures
半导体异质结构中热电子系统的太赫兹发射光谱
- 批准号:
06452104 - 财政年份:1994
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Terahertz emission from two-dimensional plasmons in semiconductor heterostructures
半导体异质结构中二维等离子体激元的太赫兹发射
- 批准号:
06555003 - 财政年份:1994
- 资助金额:
$ 5.7万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
相似海外基金
SBIR Phase I: III-V Nitride Structure for Far Infrared Detection
SBIR 第一阶段:用于远红外检测的 III-V 氮化物结构
- 批准号:
0318901 - 财政年份:2003
- 资助金额:
$ 5.7万 - 项目类别:
Standard Grant