High-sensitivity mid infrared detection using photoionization of quantum dots

利用量子点光电离的高灵敏度中红外检测

• 批准号: 13555104
• 负责人: HIRAKAWA Kazuhiko
• 金额: $ 8.06万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555104/
• 关键词: quantum dots; photodetector; quantum nanostructures; heterostructures; infrared radiation; intersubband transition; single electron transistor; ナノ構造; 赤外線; トンネル効果; サブハンド間遷移

We have designed and fabricated a quantum dot infrared photodetector which utilizes photoionization of quantum dots (QDs) and subsequent lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two-dimensional channels. A broad photocurrent signal has been observed in the mid infrared range due to the bound-to-continuum intersubband absorption in the self-assembled InAs QDs. A very high responsivity (-5 A/W) has been realized by a long lifetime of photoexcited carriers as well as high mobility in the modulation-doped conduction channels.Towards the ultimate sensitivity photodetection, we have also made an effort to realize mid infrared photon counters by using InAs QDs. Toward this goal, we fabricated lateral single electron tunneling structures by using metallic nanogap electrodes and successfully observed a clear Coulomb blockade and a shell structure-like conductance change at 4.2 K.

我们设计并制作了一个量子点红外探测器，它利用量子点（QD）的光致电离和随后的光激发载流子在调制掺杂AlGaAs/GaAs二维通道的横向输运。由于自组装InAs量子点的束缚-连续子带间吸收，在中红外波段观察到了宽的光电流信号。由于光激发载流子的长寿命以及掺杂调制的导电沟道中的高迁移率，实现了非常高的响应度（~ 5A/W）。为了实现最终灵敏度的光电探测，我们还努力利用InAs量子点实现中红外光子计数器。为此，我们利用金属纳米间隙电极制备了横向单电子隧穿结构，并在4.2K下成功地观察到了明显的库仑阻塞和类似壳层结构的电导变化。

项目成果

Y.Shimada, N.Sekine, K.Hirakawa: "THz emission due to inter-miniband resonant Zener tunneling in wide-miniband GaAs/AlO.3GaO.7As superlattices"Applied Physics Letters. (in press).

Y.Shimada、N.Sekine、K.Hirakawa：“宽微带 GaAs/AlO.3GaO.7As 超晶格中微带间谐振齐纳隧道效应引起的太赫兹发射”应用物理快报。

S.-W.Lee, K.Hirakawa: "Lifetime of photoexcited carriers in modulation-doped quantum dot inprared photodetectors"Physica E. vol.13. 305-308 (2002)

S.-W.Lee、K.Hirakawa：“红外光电探测器中调制掺杂量子点中光激发载流子的寿命”Physica E. vol.13。

Y.Kawaguchi, K.Hirakawa, S.Komiyama: "High-sensitivity quantum Hall far-infrared photodetector integrated with to-periodic antenna"Applied Physics Letters. vol.80 No.18. 3418-3420 (2002)

Y.Kawaguchi、K.Hirakawa、S.Komiyama：“与周期天线集成的高灵敏度量子霍尔远红外光电探测器”应用物理快报。

S.W.Lee, K.Hirakawa: "Lifetime of photoexcited carriers in modulation-doped quantum dot infrared photodetectors"Physica E. (印刷中).

S.W.Lee、K.Hirakawa：“调制掺杂量子点红外光电探测器中光激发载流子的寿命”Physica E.（出版中）。

K.Jin, M.Odnoblyudov, Y.Shimada, K.Hirakawa, K.A.Chao: "Terahertz frequency radiation from Bloch oscillations in GaAs/AlO.3GaO.7As superlattices"Physical Review B. vol.68, No.15. 153315-153318 (2003)

K.Jin、M.Odnoblyudov、Y.Shimada、K.Hirakawa、K.A.Chao：“GaAs/AlO.3GaO.7As 超晶格中布洛赫振荡的太赫兹频率辐射”《物理评论 B》第 68 卷，第 15 期。