Structural Analysis of Al_2O_3 Based High Temperature Melts
Al_2O_3基高温熔体的结构分析
基本信息
- 批准号:06452308
- 负责人:
- 金额:$ 5.44万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1994
- 资助国家:日本
- 起止时间:1994 至 1995
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The structural information on the melt containing Al_2O_3 is important for the better understanding of solid-melt reactions of the crystal and steel making process. However, such information is not enough because in-situ X-ray diffraction measurement at high temperature is very difficult. The main purpose of the present research project is to obtain the systematic structural data of high temperature melts containing Al_2O_3Basing on the structural data of pure Al_2O_3 (Waseda et al, 1994), the melt structure in the Al_2O_3-SiO_2-Na_2O system was systematically analyzed by the common angular dispersive X-ray diffraction (ADXD) and the energy dispersive X-ray diffraction (EDXD) techniques. The EDXD technique is known to be one of the powerful techniques which allow to get wide interference function Qi(Q) of over 250nm^<-1> and this enables us to obtain precise radial distribution functions (RDF). The experimental RDFs clearly indicate that the local structural unit of AlO_6 in the Al_2O_3 melt changes into that of AlO_4 with the addition of SiO_2 and Na_2O.These useful results are obtained only by the combination of ADXD and EDXD analyzes, presently developed. The present analysis are expected to be applied to the wider field of structural analyzes.
含Al_2O_3熔体的结构信息对于更好地理解晶体和炼钢过程的固-熔反应是重要的。然而,这样的信息是不够的,因为在高温下的原位X射线衍射测量是非常困难的。本课题的主要目的是在纯Al_2O_3结构数据的基础上,获得含Al_2O_3高温熔体的系统结构数据(Waseda等人,1994),用普通角色散X射线衍射(ADXD)和能量色散X射线衍射(EDXD)对Al_2O_3-SiO_2-Na_2O系熔体结构进行了系统分析。技术.已知EDXD技术是允许获得超过250 nm λ的宽干涉函数Qi(Q)的强大技术之一<-1>,并且这使得我们能够获得精确的径向分布函数(RDF)。实验结果表明,加入SiO_2和Na_2O后,Al_2O_3熔体中AlO_6的局部结构单元转变为AlO_4的局部结构单元。本文的分析方法可望应用于更广泛的结构分析领域。
项目成果
期刊论文数量(26)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Waseda et al.: "High Temperature X-ray Diffraction Study of Melt Structure of Silicon" Jpn.J.Appl.Phys.34. 4124-4128 (1995)
Y.Waseda 等人:“硅熔体结构的高温 X 射线衍射研究”Jpn.J.Appl.Phys.34。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Y.Waseda, K.Shinoda, K.Sugiyama, S.Takeda, K.Terashima and J.M.Toguri: "High Temperature X-ray Diffraction Study of Melt Structure of Silicon" Jpn. J.Appl. Phys.34 (8A). 4124-4128 (1995)
Y.Waseda、K.Shinoda、K.Sugiyama、S.Takeda、K.Terashima 和 J.M.Toguri:“硅熔体结构的高温 X 射线衍射研究”Jpn。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Y. Waseda et al.: "High Temperature X-ray Diffraction Study of Melt Strucutre of Silicon" Jpn. J. Appl. Phys.34. 4124-4128 (1995)
Y. Waseda 等:“硅熔体结构的高温 X 射线衍射研究”Jpn。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.Sugiyama et al.: "New ADXD/EDXD Spectrometer for Determining the Structure of Melts at High Temperature" Sci.Rep.RITU. A42. 231-237 (1996)
K.Sugiyama 等人:“用于确定高温熔体结构的新型 ADXD/EDXD 光谱仪”Sci.Rep.RITU。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
K.Sugiyama, T.Shinkai and Y.Waseda: "New ADXD/EDXD Spectrometer for Determining the Structure of Melts at High Temperature." Sci. Rep. RITU. A42. 231-237 (1996)
K.Sugiyama、T.Shinkai 和 Y.Waseda:“用于确定高温熔体结构的新型 ADXD/EDXD 光谱仪”。
- DOI:
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- 影响因子:0
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WASEDA Yoshio其他文献
WASEDA Yoshio的其他文献
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