Structural Analysis of Al_2O_3 Based High Temperature Melts
Structural Analysis of Al_2O_3 Based High Temperature Melts
批准号:
06452308
负责人:
WASEDA Yoshio
金额:
$5.44万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
点击翻译按钮获取中文摘要
英文摘要
The structural information on the melt containing Al_2O_3 is important for the better understanding of solid-melt reactions of the crystal and steel making process. However, such information is not enough because in-situ X-ray diffraction measurement at high temperature is very difficult. The main purpose of the present research project is to obtain the systematic structural data of high temperature melts containing Al_2O_3Basing on the structural data of pure Al_2O_3 (Waseda et al, 1994), the melt structure in the Al_2O_3-SiO_2-Na_2O system was systematically analyzed by the common angular dispersive X-ray diffraction (ADXD) and the energy dispersive X-ray diffraction (EDXD) techniques. The EDXD technique is known to be one of the powerful techniques which allow to get wide interference function Qi(Q) of over 250nm^<-1> and this enables us to obtain precise radial distribution functions (RDF). The experimental RDFs clearly indicate that the local structural unit of AlO_6 in the Al_2O_3 melt changes into that of AlO_4 with the addition of SiO_2 and Na_2O.These useful results are obtained only by the combination of ADXD and EDXD analyzes, presently developed. The present analysis are expected to be applied to the wider field of structural analyzes.
期刊论文(26)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Y.Waseda et al.: "High Temperature X-ray Diffraction Study of Melt Structure of Silicon" Jpn.J.Appl.Phys.34. 4124-4128 (1995)
Y.Waseda 等人:“硅熔体结构的高温 X 射线衍射研究”Jpn.J.Appl.Phys.34。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Y.Waseda, K.Shinoda, K.Sugiyama, S.Takeda, K.Terashima and J.M.Toguri: "High Temperature X-ray Diffraction Study of Melt Structure of Silicon" Jpn. J.Appl. Phys.34 (8A). 4124-4128 (1995)
Y.Waseda、K.Shinoda、K.Sugiyama、S.Takeda、K.Terashima 和 J.M.Toguri:“硅熔体结构的高温 X 射线衍射研究”Jpn。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Y. Waseda et al.: "High Temperature X-ray Diffraction Study of Melt Strucutre of Silicon" Jpn. J. Appl. Phys.34. 4124-4128 (1995)
Y. Waseda 等:“硅熔体结构的高温 X 射线衍射研究”Jpn。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Sugiyama et al.: "New ADXD/EDXD Spectrometer for Determining the Structure of Melts at High Temperature" Sci.Rep.RITU. A42. 231-237 (1996)
K.Sugiyama 等人:“用于确定高温熔体结构的新型 ADXD/EDXD 光谱仪”Sci.Rep.RITU。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Sugiyama, T.Shinkai and Y.Waseda: "New ADXD/EDXD Spectrometer for Determining the Structure of Melts at High Temperature." Sci. Rep. RITU. A42. 231-237 (1996)
K.Sugiyama、T.Shinkai 和 Y.Waseda:“用于确定高温熔体结构的新型 ADXD/EDXD 光谱仪”。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 13 条
Middle-range order structure of multi-component Li ion conducting oxides
-
批准号:24656364
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2012
-
负责人:WASEDA Yoshio
-
依托单位:
Control of cation distribution in spinel type iron oxide particles
-
批准号:23360276
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.23万
-
财政年份:2011
-
负责人:WASEDA Yoshio
-
依托单位:
Structural Characterization of LiFePO_4 based Ionic Conductivity Synthesized at Low temperatures
-
批准号:20360288
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.48万
-
财政年份:2008
-
负责人:WASEDA Yoshio
-
依托单位:
Short-range and Middle-range Ordering
-
批准号:17206075
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.45万
-
财政年份:2005
-
负责人:WASEDA Yoshio
-
依托单位:
Thermal properties and glass-forming ability of bulk glassy alloys
-
批准号:15360397
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.09万
-
财政年份:2003
-
负责人:WASEDA Yoshio
-
依托单位:
Nitride Metallurgy: Thermodynamics of Nitrides and Development of New Synthesis Methods
-
批准号:12450302
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$5.89万
-
财政年份:2000
-
负责人:WASEDA Yoshio
-
依托单位:
Development of method for measuring three dimensional thermal properties of Si/NiFe/AIN thin film using a angle femtosecond thermoreflectance technique
-
批准号:12555171
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.51万
-
财政年份:2000
-
负责人:WASEDA Yoshio
-
依托单位:
Fundamental Research on Nitride Metalirgy-New Rovte for GaN Synthesis-
-
批准号:09450275
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$5.76万
-
财政年份:1997
-
负责人:WASEDA Yoshio
-
依托单位:
Structural study for hydrolytic condensed amorphous(Y,Zr)O_x.
-
批准号:03805058
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.09万
-
财政年份:1991
-
负责人:WASEDA Yoshio
-
依托单位:
Development of a System for Measuring Thermal Diffusivity of Thin Films by Laser Flash Method Based on a New Principle.
-
批准号:01850145
-
项目类别:Grant-in-Aid for Developmental Scientific Research (B).
-
资助金额:$2.82万
-
财政年份:1989
-
负责人:WASEDA Yoshio
-
依托单位:
Development of the Remote Temperature Response Acquisition System and Its Data Processing for the Thermal Diffusivity Measurement at High Temperature
-
批准号:62850122
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$2.05万
-
财政年份:1987
-
负责人:WASEDA Yoshio
-
依托单位:
海外基金