Plasma Potential Diagnostics Using X-ray Spectra obtained with Semiconductor X-ray Detectors Developed by Our New Theory

提出了一种利用等离子体X射线能谱诊断等离子体电势的新方法。特别是，利用了新开发的半导体X射线探测器；这些探测器最初是根据我们关于半导体X射线响应的新理论设计的。局域正静电等离子体势具有捕获等离子体电子的能力。势能捕获的电子的最大能量又由势值确定，因为超过最大势能的电子加热使捕获的电子不被捕获。这种最大X射线能量的观测提供了空间局域电子限制势的识别。事实上，使用这种新方法的电位值与传统的势诊断方法的比较表明，两者之间有很好的一致性。这种新方法还提供了势能形成的新标度律。

A new method for plasma potential diagnostics using plasma X-ray spectra is developed. In particular, newly developed semiconductor X-ray detectors are utilized ; these detectors are originally designed using our new theory on semiconductor X-ray responses.Localized positive electrostatic plasma potentials have the capability of plasma electron trapping. The maximum energy of the potential trapped electrons is in turn determined from the value of the potential, since the electron heatings beyond the maximum potential energy make the trapped electrons untrapped. The observation of such a maximum X-ray energy provides the identification of the spatially localized electron confining potentials.In fact, the comparison of potential values using this new method and the conventional potential diagnostics shows good agreement between the two. This new method also provides a new scaling law of the potential formation.