Development and Fabrication of New X-ray Detectors on the basis of Our New Theory on the X-ray Response of Semiconductor Detectors

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It is found that the dependence of the x-ray-energy response of semiconductor detectors on various detector parameters is consistently explained by our new theory ; this theory is characterized by a three-dimensional diffusion effect of x-ray produced charges on output signals.This finding significantly modifies the evaluated values of plasma-electron temperatures Te deduced from the conventional theory in textbooks and the recent MIT theory. Our theory is extended so as to analyze multichannel semiconductor array data.These results are successfully applied to fabricate upgraded high-energy-sensitive and low-noise x-ray detectors. These detectors are now installed in GAMMA 10 tandem mirror plasma confining device, and the significant high energy sensitive and low noise characteristic properties provide useful data including relativistic high electron-temperature observations as well as a few tens eV low-temperature electron measurements.Our theory also provides a new idea of Te observations using only one plasma shot ; this idea comes from the use of the above-mentioned new x-ray detectors. The present investigations have lead to an international collaboration in tha fabrication and the characterization of x-ray detectors in the DIII-D tokamak device (U.S.A) as well.