Development and Fabrication of New X-ray Detectors on the basis of Our New Theory on the X-ray Response of Semiconductor Detectors

研究发现，我们的新理论可以很好地解释半导体探测器的x射线能量响应对各种探测器参数的依赖关系；该理论的特点是x射线产生的电荷对输出信号的三维扩散效应。这一发现显著地修正了从教科书中的传统理论和最近麻省理工学院的理论推导出的等离子体电子温度的评估值。扩展了我们的理论，以便分析多通道半导体阵列数据。这些结果成功地应用于制造升级的高能量敏感和低噪声x射线探测器。这些探测器现在安装在伽玛10串列镜面等离子体限制装置中，其显著的高能量敏感和低噪声特性提供了有用的数据，包括相对论性的高电子温度观测以及几十eV的低温电子测量。我们的理论还提供了仅使用一次等离子体发射进行观测的新思路；这个想法来自于对上述新型x射线探测器的使用。目前的研究也导致了在DIII-D托卡马克装置（美国）的x射线探测器的制造和表征方面的国际合作。

It is found that the dependence of the x-ray-energy response of semiconductor detectors on various detector parameters is consistently explained by our new theory ; this theory is characterized by a three-dimensional diffusion effect of x-ray produced charges on output signals.This finding significantly modifies the evaluated values of plasma-electron temperatures Te deduced from the conventional theory in textbooks and the recent MIT theory. Our theory is extended so as to analyze multichannel semiconductor array data.These results are successfully applied to fabricate upgraded high-energy-sensitive and low-noise x-ray detectors. These detectors are now installed in GAMMA 10 tandem mirror plasma confining device, and the significant high energy sensitive and low noise characteristic properties provide useful data including relativistic high electron-temperature observations as well as a few tens eV low-temperature electron measurements.Our theory also provides a new idea of Te observations using only one plasma shot ; this idea comes from the use of the above-mentioned new x-ray detectors. The present investigations have lead to an international collaboration in tha fabrication and the characterization of x-ray detectors in the DIII-D tokamak device (U.S.A) as well.