Development and Fabrication of New X-ray Detectors on the basis of Our New Theory on the X-ray Response of Semiconductor Detectors

基于半导体探测器X射线响应新理论开发和制造新型X射线探测器

• 批准号: 05558055
• 负责人: CHO Teruji
• 金额: $ 5.57万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05558055/
• 关键词: Semiconductor X-ray Detector; X-ray Response Theory; Multilayr X-ray Detector; Plasma X-ray Diagnostics; Synchrotron Radiation Detection; Synchrotron Radiation Monitor; Multichannel X-ray Detector; X-ray Detector Array; 半導体検出器; X線感度新理論; 無電場基板領域

It is found that the dependence of the x-ray-energy response of semiconductor detectors on various detector parameters is consistently explained by our new theory ; this theory is characterized by a three-dimensional diffusion effect of x-ray produced charges on output signals.This finding significantly modifies the evaluated values of plasma-electron temperatures Te deduced from the conventional theory in textbooks and the recent MIT theory. Our theory is extended so as to analyze multichannel semiconductor array data.These results are successfully applied to fabricate upgraded high-energy-sensitive and low-noise x-ray detectors. These detectors are now installed in GAMMA 10 tandem mirror plasma confining device, and the significant high energy sensitive and low noise characteristic properties provide useful data including relativistic high electron-temperature observations as well as a few tens eV low-temperature electron measurements.Our theory also provides a new idea of Te observations using only one plasma shot ; this idea comes from the use of the above-mentioned new x-ray detectors. The present investigations have lead to an international collaboration in tha fabrication and the characterization of x-ray detectors in the DIII-D tokamak device (U.S.A) as well.

我们的新理论一致地解释了半导体探测器的X射线能量响应对不同探测器参数的依赖关系，该理论的特点是X射线产生的电荷对输出信号的三维扩散效应。这一发现大大修正了从教科书中的传统理论和最近的MIT理论推导的等离子体-电子温度Te的估计值。将我们的理论扩展到分析多道半导体阵列数据，这些结果被成功地应用于制造升级的高能量灵敏度和低噪声的X射线探测器。这些探测器现在被安装在Gamma 10串联镜等离子体限制装置上，显著的高能量灵敏度和低噪声特性提供了有用的数据，包括相对论高电子温度观测和几十eV低温电子测量。我们的理论还提供了仅用一次等离子体激发观测Te的新想法；这个想法来自于上述新的X射线探测器的使用。目前的研究已经导致了在THA制造和DIII-D托卡马克装置(美国)中X射线探测器的表征方面的国际合作。

项目成果

T.Cho et al.: "Development and Characterization of Silicon Semiconductor X-ray Detectors for Plasma Diagnostics" Proc.10th Topical Conference on High-Temperature Plasma Diagnostics, Rochester, (New York, 1994, May 8-12). 3.27. 44

T.Cho 等人：“用于等离子体诊断的硅半导体 X 射线探测器的开发和表征”Proc.10th Topical Conference on High-Temperature Plasma Diagnostics，罗彻斯特，（纽约，1994 年，5 月 8-12 日）。

T. Cho. et al.: "New findings of x-ray energy responses of silicon surface bauier defectors and their geleralred theorefical exfension to x-ray responses of pasition sensitive defectors" Nucl. Instrum. Methods in Physics Research. A348. 475-478 (1994)

T. 曹.

T. Cho. et al.: "X-ray diagnostic systems in the GAMMA 10 tandem mirra and new-X-ray semiconductor-detector responses in the DIII-D tokamuk" Rev. Sci. Instrum.66. 540-542 (1995)

T. 曹.

T. Cho. et al.: "Development and charaglerization of silicon semiconductor X-ray detectors for plasma diapnofics" Rev. Sci. Instrum.66. 543-545 (1995)

T. 曹.

T.Cho et al.: "A New Theory on X-ray Signals from Semiconductor Detectors and Its Extention to Those from Miltichannel Detector Arrays, Photon Factory Activity Report 1993 11, (National Laboratory for High Energy Physics, 1994)" (No.91-264). 363

T.Cho 等人：“半导体探测器 X 射线信号的新理论及其对多通道探测器阵列的扩展，光子工厂活动报告 1993 年 11，（国家高能物理实验室，1994 年）”（No.