Development and Fabrication of New Multilayr X-ray Detectors for the Purpose of Temporal and Spatial X-ray-Energy Observations on the Basis of Our New Theory on the X-ray Response of Semiconductor Detectors

点击翻译按钮获取中文摘要

Our newly proposed theory on the x-ray-energy response of semiconductor detectors is applied for the fabrication of new multi-layr semiconductor x-ray detectors ; this theory is characterized by a three-dimensional diffusion effect of x-ray-produced charges on output signals.Also, this finding significantly modifies the evaluated values of plasma-electron temperatures Te deduced from the conventional theory in textbooks and the recent MIT theory. Our theory is extended so as to analyze multichannel semiconductor array data.These results are successfully applied to fabricate the above-described upgraded high-energy-sensitive and temporally energy-resolved x-ray detectors. These detectors are now installed in GAMMA 10 tandem mirror plasma confining device ; the significant high-energy-sensitive properties provide useful data including relativistic high-electron-temperature observations in the form of tomographically reconstructed spatial distributions.These new multi-layr detectors show reliable one-shot plasma temperature observations using the output signal ratio from each detector layr. The analyzed temperatures using only one plasma shot are consistently confirmed by a conventionally utilized NaI (T1) x-ray detector using 60 shots.This indicates the usefulness of the newly developed multilayr detector for difficult observations of poorly reproducible phenomena including ELMs, internal disruptions, and the other stability-indication signals.