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Development and Fabrication of New Multilayr X-ray Detectors for the Purpose of Temporal and Spatial X-ray-Energy Observations on the Basis of Our New Theory on the X-ray Response of Semiconductor Detectors

基于半导体探测器 X 射线响应新理论，开发和制造用于时空 X 射线能量观测的新型多层 X 射线探测器

基本信息

批准号：
07558062
负责人：
CHO Teruji
金额：
$ 5.89万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

Our newly proposed theory on the x-ray-energy response of semiconductor detectors is applied for the fabrication of new multi-layr semiconductor x-ray detectors ; this theory is characterized by a three-dimensional diffusion effect of x-ray-produced charges on output signals.Also, this finding significantly modifies the evaluated values of plasma-electron temperatures Te deduced from the conventional theory in textbooks and the recent MIT theory. Our theory is extended so as to analyze multichannel semiconductor array data.These results are successfully applied to fabricate the above-described upgraded high-energy-sensitive and temporally energy-resolved x-ray detectors. These detectors are now installed in GAMMA 10 tandem mirror plasma confining device ; the significant high-energy-sensitive properties provide useful data including relativistic high-electron-temperature observations in the form of tomographically reconstructed spatial distributions.These new multi-layr detectors show reliable one-shot plasma temperature observations using the output signal ratio from each detector layr. The analyzed temperatures using only one plasma shot are consistently confirmed by a conventionally utilized NaI (T1) x-ray detector using 60 shots.This indicates the usefulness of the newly developed multilayr detector for difficult observations of poorly reproducible phenomena including ELMs, internal disruptions, and the other stability-indication signals.

我们提出的半导体探测器的X射线能量响应理论被应用于新型多层半导体X射线探测器的制作，该理论的特征在于X射线产生的电荷对输出信号的三维扩散效应，这一发现也显著地修正了教科书中传统理论和最近的MIT理论所推导的等离子体-电子温度Te的估计值。我们的理论被扩展到分析多通道半导体阵列数据。这些结果被成功地应用于制造上述升级的高能量敏感和时间能量分辨的x射线探测器。这些探测器现已安装在伽马10串列镜等离子体约束装置中，其显著的高能灵敏特性提供了有用的数据，包括以层析重建的空间分布形式的相对论高电子温度观测，这些新的多层探测器利用每个探测器层的输出信号比显示了可靠的单次等离子体温度观测。仅使用一个等离子体发射的分析温度被常规使用的NaI（T1）x射线探测器使用60个发射一致地证实。这表明新开发的多层探测器对于难以观察的可再现性差的现象（包括ELMs、内部破裂和其他稳定性指示信号）的有用性。