Development of Semiconductor Detectors for Simultaneous Observations of Spatially Resolved Ion and Electron Temperatures and Beams

开发用于同时观测空间分辨离子和电子温度和光束的半导体探测器

• 批准号: 12558048
• 负责人: CHO Teruji
• 金额: $ 5.25万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12558048/
• 关键词: Ion Temperature Diagnostics; Electron Temperature Diagnostics; Simultaneous Observations of Ion and Electron Temperatures; Semiconductor Detectors; Charge Exchange Neutral Particle Diagnostics; X-ray Diagnostics; X-rays from Plasmas; Plasma Diagnos

An idea of the use of semiconductor detectors for simultaneously observing both plasmaion (Ti) and electron (Te) temperatures is proposed. The idea is also experimentally verified in a tandem-mirror plasma shot. This method is developed on the basis of an alternative "positive" use of a semiconductor "dead layer" as an energy-analysis filter. Filtering dependence of charge exchange neutral particles from plasmas on the thickness of a thin (of the order of nm thick) SiO2 layer is employed for analyzing Ti in the range from hundreds to thousands eV. Even under the conditions of simultaneous incidence of such particles and x rays into semiconductor detectors, the different dependence on their penetration lengths and deposition depths in semiconductor materials makes it possible to distinguish particles (for Ti) from x rays (for Te). In this research, proof-of-principle plasma experiments for the proposed idea are carried out to verify the availability of this concept of distinguishing and identifying each value of Ti and Te by the use of various thin filtering materials prior to the use of thinner dead layers.

提出了用半导体探测器同时观测等离子体离子（Ti）和电子（Te）温度的设想。这一想法也在串联镜等离子体发射中得到了实验验证。这种方法是开发的基础上的替代“积极”使用的半导体“死层”作为能量分析过滤器。过滤依赖的电荷交换中性粒子从等离子体上的厚度薄（nm厚的顺序）的SiO2层用于分析Ti的范围从数百到数千eV。即使在这种粒子和x射线同时入射到半导体探测器的条件下，它们在半导体材料中的穿透长度和沉积深度的不同依赖性也使得有可能区分粒子（对于Ti）和x射线（对于Te）。在这项研究中，验证的原则等离子体实验所提出的想法进行了验证的可用性的概念，区分和识别每个值的Ti和Te，通过使用各种薄的过滤材料之前，使用较薄的死层。

项目成果

M. Hirata et: "Development of Novel Ion-Energy Spectrometer Using a Semiconductor Detector Collector Under a Circumstance of Simultaneously Incident Ions and Electrons with X rays"Transactions of Fusion Technology. Vol. 39. 281-284 (2001)

M. Hirata 等人：“在 X 射线同时入射离子和电子的情况下使用半导体探测器收集器开发新型离子能谱仪”Transactions of Fusion Technology。

T. Cho et al.: "A Novel Method for Simultaneous Observations of Plasma Ion and Electron Temperatures Using A Semiconductor Detector Array"Nuclear Instruments and Methods in Physics Research A. (In Press). (2002)

T. Cho 等人：“使用半导体探测器阵列同时观测等离子体离子和电子温度的新方法”物理研究 A 中的核仪器和方法（正在出版）。

T. Cho, et al.: "Generalization and consolidation of scaling laws of potential formation and associated effects in the GAMMA 10 tandem mirror"Nuclear Fusion. Vol.41,No.9. 1161-1170 (2001)

T. Cho 等人：“GAMMA 10 串联镜中潜在形成和相关效应的标度定律的概括和巩固”核聚变。

M.Hirata: "Development of Novel Ion-Energy Spectrometer Using a Semiconductor Detector Collector Under a Circumstance of Simultaneously Incident Ions and Electrons with X rays"Transactions of Fusion Technology. 39. 281-284 (2001)

M.Hirata：“在 X 射线同时入射离子和电子的情况下，使用半导体探测器收集器开发新型离子能谱仪”《聚变技术汇刊》。

T.Cho et al.: "Generalized physics scaling laws of the formation and effects of plasma-confining potentials covering over the representative tandem-mirror operations in GAMMA 10"Physical Review Letters. Vol.86,No.19. 4310-4313 (2001)

T.Cho 等人：“覆盖 GAMMA 10 中代表性串联镜操作的等离子体限制势的形成和影响的广义物理标度定律”物理评论快报。