Development of Semiconductor Detectors for Simultaneous Observations of Spatially Resolved Ion and Electron Temperatures and Beams

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An idea of the use of semiconductor detectors for simultaneously observing both plasmaion (Ti) and electron (Te) temperatures is proposed. The idea is also experimentally verified in a tandem-mirror plasma shot. This method is developed on the basis of an alternative "positive" use of a semiconductor "dead layer" as an energy-analysis filter. Filtering dependence of charge exchange neutral particles from plasmas on the thickness of a thin (of the order of nm thick) SiO2 layer is employed for analyzing Ti in the range from hundreds to thousands eV. Even under the conditions of simultaneous incidence of such particles and x rays into semiconductor detectors, the different dependence on their penetration lengths and deposition depths in semiconductor materials makes it possible to distinguish particles (for Ti) from x rays (for Te). In this research, proof-of-principle plasma experiments for the proposed idea are carried out to verify the availability of this concept of distinguishing and identifying each value of Ti and Te by the use of various thin filtering materials prior to the use of thinner dead layers.