Studies of Physics Scaling and the Experimental Verification of the Effects of Fusion-Produced Neutrons on Semiconductor Detectors
聚变中子对半导体探测器影响的物理标度研究和实验验证
基本信息
- 批准号:11480111
- 负责人:
- 金额:$ 6.21万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B).
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The effects of fusion produced neutrons on the x-ray energy responses are investigated for x-ray tomography detector arrays in the GAMMA 10 tandem mirror (p-type silicon) and the Joint European Torus (JET) tokamak (n-type silicon). X-ray energy responses of these detector arrays after neutron exposure are studied using synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory. For estimation of neutron effects on x-ray-sensitive depletion thickness, changes in the material properties of the detector arrays are investigated using an impedance analyzer. Well-calibrated neutron-irradiation experiments are performed using a cyclotron accelerator facility so as to simulate the effects of fusion produced neutrons on plasma x-ray detectors. Degradation of the x-ray responses after neutron exposure due to fusion plasma shots in JET as well as cyclotron-produced neutron irradiations are found to have a functional dependence on x-ray energy. Recovery of the x-ray energy response is found with increasing applied bias to a detector. Such properties are well interpreted using our theory in terms of the neutron effects on the diffusion length and the resistivity of detectors.
在伽玛10串联反射镜(p型硅)和联合欧洲环面(JET)托卡马克(n型硅)中的x射线层析成像探测器阵列上研究了聚变产生的中子对x射线能量响应的影响。利用光子工厂的2.5 GeV正电子存储环的同步辐射,研究了这些探测器阵列在中子暴露后的x射线能量响应。为了估计中子对x射线敏感损耗厚度的影响,使用阻抗分析仪研究了探测器阵列材料性质的变化。为了模拟聚变产生的中子对等离子体x射线探测器的影响,利用回旋加速器设备进行了校准良好的中子辐照实验。在JET中,由于聚变等离子体射击以及回旋加速器产生的中子辐照,中子暴露后x射线响应的退化与x射线能量有功能依赖。x射线能量响应的恢复是随着探测器施加偏置的增加而发现的。这些性质可以用我们的理论很好地解释中子对扩散长度和探测器电阻率的影响。
项目成果
期刊论文数量(48)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Cho et al.: "Effects of Neutrons on Semiconductor X-Ray Detectors Including n-Type Joint European Torus and p-Type GAMMA 10 Tomography Detectors"Review of Scientific Instruments. 70. 577-580 (1999)
T.Cho 等人:“中子对半导体 X 射线探测器的影响,包括 n 型联合欧洲环面和 p 型 GAMMA 10 断层扫描探测器”科学仪器评论。
- DOI:
- 发表时间:
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- 影响因子:0
- 作者:
- 通讯作者:
J.Kohagura et al.: "Newly Developed Matrix-Type Semiconductor Detector for Temporally and Spatially Resolved・X-Ray Analyses Ranging Down to a Few Tens eV Using a Single Plasma Shot"Review of Scientific Instruments. 70,No.1. 633-636 (1999)
J. Kohagura 等人:“新开发的矩阵型半导体探测器,可使用单次等离子体发射进行低至几十 eV 的 X 射线分析”科学仪器评论 70,第 633 期。 -636 (1999)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
J.Kohagura: "Investigation of X-ray-Energy Responses of Semiconductor Detectors under Deuterium-Tritium Fusion-Produced Neutron Irradiation"Review of Scientific Instruments. 72. 805-808 (2001)
J.Kohagura:“氘氚聚变产生的中子辐照下半导体探测器的 X 射线能量响应的研究”科学仪器评论。
- DOI:
- 发表时间:
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- 影响因子:0
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T.Cho et al.: "Generalized physics scaling laws of the formation and effects of plasma-confining potentials covering over the representative tandem-mirror operations in GAMMA 10"Physical Review Letters. (Accepted for publication)(印刷中). (2001)
T.Cho 等人:“GAMMA 10 中代表性串联镜操作的等离子体限制势的形成和影响的广义物理标度定律”(已接受出版)(2001 年出版)。 )
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
T.Cho et al.: "Summarized Scaling Laws of Potential Confined Plasmas in the GAMMA 10 Tandem Mirror"Transactions of Fusion Technology. 39. 33-40 (2001)
T.Cho 等人:“GAMMA 10 串联镜中潜在受限等离子体的缩放定律总结”聚变技术交易。
- DOI:
- 发表时间:
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- 影响因子:0
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{{ truncateString('CHO Teruji', 18)}}的其他基金
Relation between a plasma confinement improvement due to internal transport barrier formation and the effects of sheared flows on the suppression of turbulent vortices
由于内部传输势垒形成而改善的等离子体约束与剪切流对湍流涡流抑制的影响之间的关系
- 批准号:
18360441 - 财政年份:2006
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Generalized Physics Mechanisms of Plasma Confinement with Radially Sheared Electric Field Formation by High Power ECH and Verification of Newly Developed Plasma Stabilization Method
高功率 ECH 形成径向剪切电场的等离子体约束的广义物理机制及新开发的等离子体稳定方法的验证
- 批准号:
16360455 - 财政年份:2004
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Extended Consolidation of Scaling Laws of Plasma Potential Confinement and Potential Formation
等离子体势限制和势形成的标度定律的扩展巩固
- 批准号:
14380216 - 财政年份:2002
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Semiconductor Detectors for Simultaneous Observations of Spatially Resolved Ion and Electron Temperatures and Beams
开发用于同时观测空间分辨离子和电子温度和光束的半导体探测器
- 批准号:
12558048 - 财政年份:2000
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of New Plasma Diagnostics Detectors for the Purpose of the Simultaneous Detection of X-rays, Electrons, Neutral Particles, and Ions with Their Species Resolution Having High Outputs in Wide Energy Ranges
开发新型等离子体诊断探测器,用于同时探测 X 射线、电子、中性粒子和离子,其物种分辨率在宽能量范围内具有高输出
- 批准号:
09558054 - 财政年份:1997
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Studies of Spatial Distributions of Potential Confined Electron Distribution Functions and a Scaling Law of Plasma Confining Potentials for Producing High Electron Temperatures and High Densities
势约束电子分布函数的空间分布和产生高电子温度和高密度的等离子体约束势的标度律的研究
- 批准号:
09480106 - 财政年份:1997
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development and Fabrication of New Multilayr X-ray Detectors for the Purpose of Temporal and Spatial X-ray-Energy Observations on the Basis of Our New Theory on the X-ray Response of Semiconductor Detectors
基于半导体探测器 X 射线响应新理论,开发和制造用于时空 X 射线能量观测的新型多层 X 射线探测器
- 批准号:
07558062 - 财政年份:1995
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Plasma Potential Diagnostics Using X-ray Spectra obtained with Semiconductor X-ray Detectors Developed by Our New Theory
使用我们新理论开发的半导体 X 射线探测器获得的 X 射线光谱进行等离子体电势诊断
- 批准号:
06452418 - 财政年份:1994
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development and Fabrication of New X-ray Detectors on the basis of Our New Theory on the X-ray Response of Semiconductor Detectors
基于半导体探测器X射线响应新理论开发和制造新型X射线探测器
- 批准号:
05558055 - 财政年份:1993
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Development of a New Photoelectron Spectroscopy method Using Microchannel Plates and Studies of Electron Confinement due to Electrostatic Plasma Potentials
使用微通道板开发新的光电子能谱方法并研究静电等离子体势引起的电子限制
- 批准号:
03680003 - 财政年份:1991
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
Study on Neutron Damage Dynamics of Semiconductor Materials
半导体材料中子损伤动力学研究
- 批准号:
08680525 - 财政年份:1996
- 资助金额:
$ 6.21万 - 项目类别:
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半导体晶体中子损伤动力学研究
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06680469 - 财政年份:1994
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半导体材料聚变-中子损伤动力学研究
- 批准号:
05558068 - 财政年份:1993
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$ 6.21万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Study on Neutron Damage Dynamics of Highly Integrated Semiconductor Devices
高集成半导体器件中子损伤动力学研究
- 批准号:
04680229 - 财政年份:1992
- 资助金额:
$ 6.21万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
MUTATION-TRANSFORMATION: NEUTRON DAMAGE AND REPAIR
突变转化:中子损伤与修复
- 批准号:
3171722 - 财政年份:1983
- 资助金额:
$ 6.21万 - 项目类别:
MUTATION-TRANSFORMATION: NEUTRON DAMAGE AND REPAIR
突变转化:中子损伤与修复
- 批准号:
3171721 - 财政年份:1983
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$ 6.21万 - 项目类别:
MUTATION-TRANSFORMATION: NEUTRON DAMAGE AND REPAIR
突变转化:中子损伤与修复
- 批准号:
3171719 - 财政年份:1983
- 资助金额:
$ 6.21万 - 项目类别:
MUTATION-TRANSFORMATION: NEUTRON DAMAGE AND REPAIR
突变转化:中子损伤与修复
- 批准号:
3171723 - 财政年份:1983
- 资助金额:
$ 6.21万 - 项目类别: