The Piezoresistance Effect in Silicon: Sensor Application and IC Influence.

硅中的压阻效应：传感器应用和 IC 影响。

• 批准号: 59460054
• 负责人: KANDA Yozo
• 金额: $ 4.99万
• 依托单位: Hamamatsu University School of Medicine
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1984
• 资助国家: 日本
• 起止时间: 1984 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-59460054/
• 关键词: Pressure sensor; Acceleration sensor; Shear stress; VLSI; Four-terminal-gauge; Microcrystalline Si; Piezoresistance of p-Si; VLSI

1. Development of Pressure and Acceleration Sensors:Five pressure and an acceleration sensors with four-terminal-gauge(F-T-G) using the shear stress have been developed. Since the size of the F-T-G is small, four F-T-G with different radii in an equivalent crystal direction in the (100) plane were made in a diaphragm so that an optimum gauge for various pressure range could be chosen. The acceleration sensor with F-T-G doubles the sensitivity of the conventional one.2. Field-Assisted Bonding between Silicon and Glass.The transient current characteristics and temperature surge during bonding were measured. The current characteristics were simulated by an equivalent circuit.3. Origin of the longitudinal and transverse piezoresistance(PR) of p-type silicon was explained by a model of stress decoupling of the degenerate valence band into two bands of prolate and oblate ellipsoidal energy surface.4. Graphical representation of the shear PR coefficients in plane <(pi)(_(66)^')> , <(pi)(_(16)^')> , <(pi)(_(26)^')> were performed.PR effect in microcrystalline silicon films with various degree of orientational disorder is discussed on a simple model and a comparison of the result with experiment is made.6. PR analysis for Si VLSI chip design is made. It is found that <(pi)(_(55)^')> is one of the most important component.

1.压力和加速度传感器的研制：研制了五种压力传感器和一种四端压力计(F-T-G)。由于F-T-G的尺寸较小，因此在膜片中制作了四个在(100)面上等效晶向半径不同的F-T-G，以选择不同压力范围的最佳压力计。带有F-T-G的加速度传感器使传统传感器的灵敏度提高了一倍。测试了硅片与玻璃之间的场助键合过程中的暂态电流特性和温度波动。用等效电路对其电流特性进行了仿真。用简并价带的应力解耦模型解释了p型硅纵向和横向压阻的起源。给出了平面&lt；(Pi)(66^‘)&gt；，&lt；(Pi)(16’)&gt；，&lt；(Pi)(26)‘)&gt；的剪切PR系数的图形表示，并用一个简单的模型讨论了不同取向无序微晶硅薄膜的PR效应，并与实验结果进行了比较。对硅超大规模集成电路芯片设计进行了PR分析。研究发现，~lt；(Pi)(_(55)^‘)&gt；是其中最重要的成分之一。

项目成果

Y.Kanda: Digest of International Conference on Solid-State Sensors and Actuators.(1987)

Y.Kanda：固态传感器和执行器国际会议摘要。（1987）

神田洋三: 応用物理. 54. 353-354 (1985)

神田阳三：应用物理学。54。353-354（1985）

K.Suzuki: Proceeding the 18th International Conference on the Physics of Semiconductors.1069-1072 (1987)

K.Suzuki：第 18 届国际半导体物理会议论文集.1069-1072 (1987)

Y.Kanda: Japanese Journal of Applied Physics. 25. L35-L37 (1986)

Y.Kanda：日本应用物理学杂志。

Y. Kanda: "Graphical representation of the piezoresistance coefficients in silicon-shear coefficients in plane." Japanese Journal of Applied Physics. (1987)

Y. Kanda：“平面硅剪切系数中压阻系数的图形表示。”