The Piezoresistance Effect in Silicon: Sensor Application and IC Influence.

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1. Development of Pressure and Acceleration Sensors:Five pressure and an acceleration sensors with four-terminal-gauge(F-T-G) using the shear stress have been developed. Since the size of the F-T-G is small, four F-T-G with different radii in an equivalent crystal direction in the (100) plane were made in a diaphragm so that an optimum gauge for various pressure range could be chosen. The acceleration sensor with F-T-G doubles the sensitivity of the conventional one.2. Field-Assisted Bonding between Silicon and Glass.The transient current characteristics and temperature surge during bonding were measured. The current characteristics were simulated by an equivalent circuit.3. Origin of the longitudinal and transverse piezoresistance(PR) of p-type silicon was explained by a model of stress decoupling of the degenerate valence band into two bands of prolate and oblate ellipsoidal energy surface.4. Graphical representation of the shear PR coefficients in plane <(pi)(_(66)^')> , <(pi)(_(16)^')> , <(pi)(_(26)^')> were performed.PR effect in microcrystalline silicon films with various degree of orientational disorder is discussed on a simple model and a comparison of the result with experiment is made.6. PR analysis for Si VLSI chip design is made. It is found that <(pi)(_(55)^')> is one of the most important component.