The Piezoresistance Effect in Silicon: Sensor Application and IC Influence.

1. 压力和加速度传感器的发展：已开发出5种采用剪切应力的四端压力表（F-T-G）的压力和加速度传感器。由于F-T-G的尺寸较小，在（100）平面的等效晶体方向上制作了4个半径不同的F-T-G膜片，以便选择适合各种压力范围的最佳压力表。具有F-T-G的加速度传感器的灵敏度是传统传感器的两倍。硅和玻璃之间的场辅助键合。测量了焊接过程中的瞬态电流特性和温度浪涌。用等效电路模拟了电流特性。用简并价带应力解耦模型解释了p型硅的纵向和横向压阻（PR）的来源。对剪切PR系数在<(pi)(_(66)^')>、<(pi)(_(16)^')>、<(pi)(_(26)^')>平面上进行图形表示。在一个简单的模型上讨论了不同取向无序程度的微晶硅薄膜中的PR效应，并与实验结果进行了比较。对VLSI芯片设计进行了PR分析。发现<(pi)(_(55)^')>是最重要的分量之一。

1. Development of Pressure and Acceleration Sensors:Five pressure and an acceleration sensors with four-terminal-gauge(F-T-G) using the shear stress have been developed. Since the size of the F-T-G is small, four F-T-G with different radii in an equivalent crystal direction in the (100) plane were made in a diaphragm so that an optimum gauge for various pressure range could be chosen. The acceleration sensor with F-T-G doubles the sensitivity of the conventional one.2. Field-Assisted Bonding between Silicon and Glass.The transient current characteristics and temperature surge during bonding were measured. The current characteristics were simulated by an equivalent circuit.3. Origin of the longitudinal and transverse piezoresistance(PR) of p-type silicon was explained by a model of stress decoupling of the degenerate valence band into two bands of prolate and oblate ellipsoidal energy surface.4. Graphical representation of the shear PR coefficients in plane <(pi)(_(66)^')> , <(pi)(_(16)^')> , <(pi)(_(26)^')> were performed.PR effect in microcrystalline silicon films with various degree of orientational disorder is discussed on a simple model and a comparison of the result with experiment is made.6. PR analysis for Si VLSI chip design is made. It is found that <(pi)(_(55)^')> is one of the most important component.