Experimental and Theoretical Investigation of Uniaxial Stress Effect on Si Hall Coefficient, Hole Effective Mass, Noise and Intervalley Scattering

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(1) Piezo-Hall EffectThe 3 Piezo-Hall tensor components P11, P12, P44 were determined experimentally in p-Si.(2) MOS CapacitorN-MOS,p-MOS each with and without diffusion were used.Conpression and tension were applied to <100> and <110>. 32 kinds of C-V characteristics including polarity were measured. Experimental results were explained by the change of depletion layr width through the change of band・edge and Fermi level. Interface trap density and fixed oxide charges did not change.(3) Intervany Scattering in n-SiThe effect of stress on f-scatterillg was calculated by the change of the density of state effective mass through the band edge change.(4) Simulation of Piezoresistance EffectFor higher impurity concentration, impurity bands were taken into account.(5) Optimum Design of Piezoresistive Pressure Sensors.Non-linearity was regarded as noise. The signal to noise ratio was improved.