Experimental and Theoretical Investigation of Uniaxial Stress Effect on Si Hall Coefficient, Hole Effective Mass, Noise and Intervalley Scattering

单轴应力对硅霍尔系数、空穴有效质量、噪声和谷间散射影响的实验和理论研究

• 批准号: 07455013
• 负责人: KANDA Yozo
• 金额: $ 4.22万
• 依托单位: Toyo University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455013/
• 关键词: Si; electrical conduction; uniaxial stress; piezo-Hall effect; MOS; piezoresistive pressure sensor; simulation; シリコン伝導応力効果; ホール係数応力効果; モスキャパシタ応力効果; 谷間散乱応力効果

(1) Piezo-Hall EffectThe 3 Piezo-Hall tensor components P11, P12, P44 were determined experimentally in p-Si.(2) MOS CapacitorN-MOS,p-MOS each with and without diffusion were used.Conpression and tension were applied to <100> and <110>. 32 kinds of C-V characteristics including polarity were measured. Experimental results were explained by the change of depletion layr width through the change of band・edge and Fermi level. Interface trap density and fixed oxide charges did not change.(3) Intervany Scattering in n-SiThe effect of stress on f-scatterillg was calculated by the change of the density of state effective mass through the band edge change.(4) Simulation of Piezoresistance EffectFor higher impurity concentration, impurity bands were taken into account.(5) Optimum Design of Piezoresistive Pressure Sensors.Non-linearity was regarded as noise. The signal to noise ratio was improved.

(1)Piezo-Hall张量P11，P12，P44是在p-Si中测量的。(2)MOS电容器分别采用N-MOS、p-MOS，有无扩散<100><110>。测量了包括极性在内的32种C-V特性。通过带边和费米能级的变化来改变耗尽层的宽度，解释了实验结果。界面陷阱密度和固定氧化物电荷没有变化。(3)n-Si中的间隔散射应力对f-散射的影响是通过带边变化引起的态密度有效质量的变化来计算的。(4)压阻效应的模拟对于较高的杂质浓度，考虑了杂质带。(5)压阻式压力传感器的优化设计将非线性视为噪声。提高了信噪比。

项目成果

Y.anda and A.Yasukawa: "Optimum Design Considerations for Silicon Piezoresistive Pressure Sensors" Proc.of Eurosensors X. vol.5. 1501-1502 (1996)

Y.anda 和 A.Yasukawa：“硅压阻压力传感器的优化设计考虑因素”Proc.of Eurosensors X. vol.5。

Y.Kanda and A.Yasukawa: "Optimum Design Considerations for Silicon Piezoresistive pressure Sensors" Technical Digest of the 14th Sensor Symposium. 51-54 (1996)

Y.Kanda 和 A.Yasukawa：“硅压阻压力传感器的优化设计考虑”第 14 届传感器研讨会技术文摘。

Y.anda and A.Yasukawa: "Optimum Design Considerations for Silicon Piezoresistive Pressure Sensors" Proc.of Eurosensors X. 5. 1501-1502 (1996)

Y.anda 和 A.Yasukawa：“硅压阻压力传感器的优化设计考虑因素”Proc.of Eurosensors X. 5. 1501-1502 (1996)

Y.Kanda and A.Yasukawa: "Optimum Design Considerations for Silicon Piezoresistive Pressure Sensors" Sensors and Actuators. A62. 539-542 (1997)

Y.Kanda 和 A.Yasukawa：“硅压阻压力传感器的优化设计考虑”传感器和执行器。

Y.Kanda and A.Yasukawa: "Oputimum Design Considerations for Silicon Piezoresistive Pressure Sensors" Sensors and Actuators. A62. 539-542 (1997)

Y.Kanda 和 A.Yasukawa：“硅压阻压力传感器的 Oputimum 设计注意事项”传感器和执行器。