Research on a Frequency-Change-Type High-Sensitivity MEMS Acceleration Sensor

变频式高灵敏度MEMS加速度传感器的研究

• 批准号: 16560043
• 负责人: SUGAWARA Sumio
• 金额: $ 2.3万
• 依托单位: Ishinomaki Senshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560043/
• 关键词: acceleration sensor; single crystal silicon; MEMS; force sensor; bending vibrator; axial force; finite element analysis; resonance freouency change; 圧電駆動

A high-sensitivity MEMS acceleration sensor utilizing the resonance frequency change of a bending vibrator is developed in this research. The sensor element is designed by using the finite element method, and manufactured for trial. The obtained results are summarized as follows.1.Piezoelectric Bending Vibrator as High Sensitivity Force Sensor(1)The newly-developed bending vibrator made of single crystal silicon acts as a high-sensitivity force sensor, and the first out-of-plane mode of vibration is driven electrically by using the sandwich structure consisting of Au upper electrode, PZT piezoelectric film and Ag lower electrode on the central arm of the vibrator.(2)The upper electrode was divided into two parts, and these are used for driving and monitoring respectively2.Construction and Characteristics of Acceleration Sensor(1)The sensor element is constructed by combination of the vibrator, mass, support bars and frame for clamping, and is used as a 1-axis sensor for detection of acceleration along the y axis.(2)The bent-type support bars are used for high-sensitivity because of small support stiffness.(3)The volume of sensor element is about 4.0 × 4.8 × 0.5 mm^3.(4)The effect of acceleration along the z axis is about 0.15%, and the value along the x axis is almost 0%.(5)The resonance frequency of the sensor element was estimated about 23.1825kHz experimentally.(6)The sensor sensitivity obtained experimentally is about 4,000ppm/G.(7)The sensor is also applied to an inclination angle sensor around the x axis by use of gravity.The acceleration sensor can be also realized by piezoelectric single crystals. Therefore good temperature characteristic and high efficient drive will be expected. The sensor structures for detection of multi-axis acceleration and for combination with another sensor may be devised in the future.

本研究利用弯曲振子的共振频率变化，研制出一种高灵敏度的MEMS加速度传感器。利用有限元法设计了传感器元件，并进行了试制。1.压电弯曲振子作为高灵敏度力传感器（1）新研制的单晶硅弯曲振子作为高灵敏度力传感器，通过在振子的中心臂上采用Au上电极、PZT压电薄膜和Ag下电极组成的三明治结构，电驱动第一离面振动模式。（2）上电极分为两部分，分别用于驱动和监测。2.加速度传感器的结构和特性（1）传感器元件由振动器、质量块、支撑杆和用于夹紧的框架组合而成，用作单轴传感器，用于检测沿y轴沿着的加速度。（2）由于支承刚度小，所以采用了高灵敏度的悬臂式支承杆。（3）传感器元件的体积约为4.0 × 4.8 × 0.5 mm^3。（4）加速度沿着z轴的影响约为0. 15%，沿沿着x轴的值几乎为0%。（5）实验测得传感器元件的谐振频率为23.1825kHz。（6）实验测得的传感器灵敏度约为4, 000 ppm/G。（7）该传感器还可应用于利用重力绕x轴的倾角传感器，加速度传感器也可由压电单晶实现。因此，良好的温度特性和高效率的驱动器将被期望。将来可以设计用于检测多轴加速度以及与另一传感器组合的传感器结构。

项目成果

単結晶シリコン加速度センサの新構成 -横振動子の軸力による共振周波数変化を利用したMEMS加速度センサの実現を目指して-

单晶硅加速度传感器的新结构 - 旨在实现利用横向振动器的轴向力引起的共振频率变化的MEMS加速度传感器 -

• 发表时间: 2006
• 期刊: 超音波TECHNO Vol.18,No.1
• 作者: H.Oglivy;H.M.Pask;J.M.Piper T.Omatsu;菅原 澄夫;菅原 澄夫
• 通讯作者: 菅原 澄夫

New Structure of Single Crystal Silicon Acceleration Sensor - Realization of MEMS Acceleration Sensor Utilizing Resonance Frequency Change of Bending Vibrator by Axial Force -

单晶硅加速度传感器的新结构 - 利用弯曲振动器的谐振频率因轴向力而变化的MEMS加速度传感器的实现 -

• 发表时间: 2006
• 期刊: Ultrason.Techno[in Japanese] Vol.18, No.1
• 作者: H.Oglivy;H.M.Pask;J.M.Piper T.Omatsu;菅原 澄夫;菅原 澄夫;Sumio Sugawara;Sumio.Sugawara
• 通讯作者: Sumio.Sugawara

単結晶シリコン加速度センサの有限要素法による構造設計

基于有限元法的单晶硅加速度传感器结构设计

• 发表时间: 2005
• 期刊: 第26回超音波エレクトロニクスの基礎と応用に関するシンポジウム講演論文集 No.P1-17,11月
• 作者: H.Oglivy;H.M.Pask;J.M.Piper T.Omatsu;菅原 澄夫;菅原 澄夫;Sumio Sugawara;Sumio.Sugawara;菅原 澄夫;菅原 澄夫
• 通讯作者: 菅原 澄夫

Characteristics of Acceleration Sensor Utilizing Frequency Change by Axial Force

利用轴向力频率变化的加速度传感器的特性

• 发表时间: 2005
• 期刊: Acoust.Soc.Jpn, Proc.Autumn Meet.[in Japanese] No.3-P-8
• 作者: H.Oglivy;H.M.Pask;J.M.Piper T.Omatsu;菅原 澄夫;菅原 澄夫;Sumio Sugawara;Sumio.Sugawara;菅原 澄夫;菅原 澄夫;菅原 澄夫;菅原 澄夫;Sumio Sugawara;Sumio Sugawara;Sumio Sugawara
• 通讯作者: Sumio Sugawara

Finite element Analysis of Single Crystal Silicon Acceleration Sensor

单晶硅加速度传感器的有限元分析

• 发表时间: 2005
• 期刊: Acoust.Soc.Jpn, Proc.Autumn Meet.[in Japanese] No.3-P-9
• 作者: H.Oglivy;H.M.Pask;J.M.Piper T.Omatsu;菅原 澄夫;菅原 澄夫;Sumio Sugawara;Sumio.Sugawara;菅原 澄夫;菅原 澄夫;菅原 澄夫;菅原 澄夫;Sumio Sugawara;Sumio Sugawara
• 通讯作者: Sumio Sugawara