Mechanical Stress Effects on MOS Capacitors including FeRAM

机械应力对 MOS 电容器（包括 FeRAM）的影响

• 批准号: 12650019
• 负责人: KANDA Yozo
• 金额: $ 2.3万
• 依托单位: Toyo University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650019/
• 关键词: MOS; FeRAM; Capacitance; hysteresis; mechanical stress; depletion layer; intrinsic carrier density; effective mass of holes

1. MOSn-MOS and p-MOS capacitances were measured at 1MHz, and at room temperature under tension and compression. Capacitance change can be explained by the change of depletion layer width through energy gap change and density of state effective mass change of hole bands. The slope of C-V curve doesn't displace in parallel. The C-V curve does not stretch-out.Dielectric constant, fixed oxide charge and interface trap density don't change. Geometric deformation does not affect the capacitance. The stress dependence of intrinsic carrier density was explained.2. FeRAMPt lower electrode was deposited on MOS structure. PZT thin film was deposited on the electrode by sol-gel method and annealed at 550 C. The thickness of the film is 220 nm. Pt circular electrode with 220 μm diameter was deposited on it. Hysteresis loops were observed by Saujer-Tower circuit at 100 kHz under tension and compression. The stress coefficients of residual polarization, coercive field and spcCapacitance vs voltage characteristics with tensile stress and without stress were measured. Capacitance decrease slightly with tensile stress.

1. MOSn-MOS 和 p-MOS 电容是在 1MHz、室温、拉伸和压缩条件下测量的。电容变化可以通过能隙变化和空穴能带状态密度有效质量变化引起的耗尽层宽度变化来解释。 C-V曲线的斜率不平行位移。 C-V曲线不会拉伸。介电常数、固定氧化物电荷和界面陷阱密度不会改变。几何变形不影响电容。解释了本征载流子密度的应力依赖性。 2． FeRAMPt下电极沉积在MOS结构上。采用溶胶-凝胶法在电极上沉积PZT薄膜，并在550℃下退火，薄膜厚度为220 nm。其上沉积直径为220μm的Pt圆形电极。通过 Saujer-Tower 电路在 100 kHz 的拉伸和压缩条件下观察到磁滞回线。测量了有拉应力和无应力时残余极化、矫顽场和spc电容与电压特性的应力系数。电容随拉应力略有下降。

项目成果

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Takanori Ichiki：“大气压微等离子体射流在微加工中的应用”表面技术协会杂志 52(12) (2001)。

Y. KANDA: "SoC for bio-medical application utilizing ferroelectric thin film"5^<th> symposium on Bio-Nano Electronics p.134 (Nov. 24, 2000), Kawagoe.

Y. KANDA：“利用铁电薄膜的生物医学应用的 SoC”第 5 届生物纳米电子研讨会第 134 页（2000 年 11 月 24 日），川越。

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