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Theoretical Design of New Materials and Prediction of Electronic Structures and Properties of the Materials

Theoretical Design of New Materials and Prediction of Electronic Structures and Properties of the Materials
新材料理论设计及材料电子结构和性能预测
批准号:
61460035
负责人:
KAMIMURA Hiroshi
金额:
$4.16万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1986
资助国家:
日本
项目状态:
已结题
起止时间:
1986 至 1988

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中文摘要
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英文摘要
Many recent advances in condensed matter physics me due to vigorous interaction among physic material science and technology. Such interaction is schematically expressed by the corrlation diagra shown in Fig. 1. This correlation diagramindicates poss bilities towards 21st century that we can mak new materials according to our desires and the birth of such man made materials leads to discovery new phenomena and new physical concepts, and that new devices are invented from them.The purpose of the present research project was twofold:(1) to establish a theoretical framewor to calculate the electronic structures and the stability of such new materials and (2) to design a ne hypothetical stable material with use of the theory established by (1).Accelerated by perpetual desire to find concepts and new phenomena, we have chosen the followin eight categories of materials as the object of sutdy; (1) semiconductor ultrathin layered superlattice (2)semiconductor-metal superlattices, (3)graphite i … More ntercalation compounds, (4) doped semiconducto which exhibit a metal-insulator transition, (5) microclusters in a mesoscopic regime, (6) quasi-crystal (7) new material phases on surface, and (8) high temperature superconducting copper oxides.The outstanding results obtained by this project were the following: (1) the proposal and develop ment of spin-polaron pairing mechanism in high T_ccopper oxides, (2) the proposal and development intercalation compounds (GIC_s), (3) clarification of the origin of paramagnetic orbital susceptibilit of GIC_s, (4) elucidation of the origin of the NMR shift in GIC_s and graphite, (5) development of theoretical framework to treat the interplay between discover and electron-electron interaction in a Anderson-localized regime near the metal-insulator transition in doped semiconductors. (6) develop ment of new variational methods to treat many-body problems in new materials in a mesoscopic regim such as impurity clusters and metallic microclusters which are multiconfigulation self-consistent fie (MCSCF) method and floating ellipsoidal gaussian orbital (FEGO) method, (8) the electronic stru ture calculation of the new material phases on surfaces for MgO polar surface, Si(100)2X1/alkeli, an Si(100) reconstructed surface, (9) development of a the oretical framework to treat the dynamics an electronic attachment of miclocluster.As mentioned above, the group of the present research project has been working actively and ha accomplished a number of new interesting and important rnsults. Less
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H.Kamimura;A.Oshiyama eds.: "Springer,Heidelberg" Mechanism of high temperature super-conductivity, (1989)
H.Kamimura;A.Oshiyama 编辑:“Springer,Heidelberg”高温超导机制,(1989)
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通讯作者:
H.Kamimura: Annales de Physique Colloque n°2,supplement au n°2. 11. 39-48 (1986)
H.Kamimura:Annales de Physique Colloque n°2,增刊 au n°2 (1986)。
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M.Tsukada: Proc.of Sino-Japan Bilateral Workshop on Statistical Physics and Condensed Matter Theory(ed.Xie Xide,World Sci,). 164 (1986)
冢田先生:中日统计物理与凝聚态理论双边研讨会论文集(谢希德主编,世界科学)。
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斉藤理一郎: 月刊フィジクス. 7. 178-184 (1986)
斋藤里一郎:《物理学月刊》。7. 178-184 (1986)
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70
    ELECTRONIC STATES OF (GaP)m(AlP)n SHORT PERIOD SUPERLATTICES AND MULTI-QUANTUM WELL STRUCTURES AND THE MECHANISM OF PHOTOLUMINESCENCE
    • 批准号:
      08454086
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.99万
    • 财政年份:
      1996
    • 负责人:
      KAMIMURA Hiroshi
    • 依托单位:
    Low Dimensional Structures and Devices
    • 批准号:
      06044202
    • 项目类别:
      Grant-in-Aid for international Scientific Research
    • 资助金额:
      $4.86万
    • 财政年份:
      1994
    • 负责人:
      KAMIMURA Hiroshi
    • 依托单位:
    Low Dimensional Structures and Devices
    海外基金