Excitonic optical transition in a new II-VI semiconductor superlattice

新型 II-VI 族半导体超晶格中的激子光学跃迁

基本信息

  • 批准号:
    07455126
  • 负责人:
  • 金额:
    $ 4.74万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

II-VI semiconductors such as ZnSe are attractivenot only for the application of blue semiconductor lasers but also from physical properties such as large exciton binding energies. We have proposed ZnSe/MgSSe superiattices and have been working on the exciton related optical transitions in this superlattice.First of all we have demonstrated that the zincblende ZnSe/MgS superlattice can be grown by metalorganic vapor phase epitaxy. The crystalline properties of the the superlattice was critically dependent on the initial growth on GaAs, and therefore the surface cleaning conditions such as metalorganic As flow were examined.With these studies, we could improve the atomic abruptness of the heterointerface and monolayr photoluminescence peaks were well resolved in the ZnSe/MgS superlattice grown with the optimized condition.Based on these growth study, the superlattice crystalline structure was examined with high-resolution X-ray diffraction measurements. Clear superlattice satellite peaks were observed. From the shift of the 0-th peak, we found the formation of the MgSe interface layr. This was improved with growth interruption at the heterointerfaces.Excitonic peaks were clearly observed in the reflection spectra up to room temperature, which indicate the enhancement of quantum confinement on excitons. Photoluminescence from this superlattice was also shown to be excitonic up to room temperature.
II-VI族半导体如ZnSe不仅在蓝色半导体激光器的应用方面具有吸引力,而且从物理性质如大的激子结合能方面也具有吸引力。我们提出了ZnSe/MgSSe超晶格,并对这种超晶格中与激子相关的光跃迁进行了研究。首先,我们证明了ZnSe/MgS超晶格可以用金属有机物气相外延生长。超晶格的结晶性质与GaAs上的初始生长密切相关,因此,我们研究了表面清洁条件,如金属有机As流,通过这些研究,我们可以改善异质界面的原子不连续性,并且在优化条件下生长的ZnSe/MgS超晶格中,单层光致发光峰得到了很好的分辨。用高分辨率X射线衍射测量检查超晶格晶体结构。观察到清晰的超晶格卫星峰。从第0峰的位移,我们发现了MgSe界面层的形成。在室温下的反射光谱中可以清晰地观察到激子峰,这表明激子的量子限制增强。从这个超晶格的光致发光也被证明是激子到室温。

项目成果

期刊论文数量(26)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H. Nashiki: "Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" Jpn. J. Appl. Phys.(印刷中). (1997)
H. Nashiki:“金属有机气相外延生长的 ZnSe/MgS 超晶格中激子的局部化发光”J. Appl。
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    0
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H.Suzuki: "Purge Effect on Hetero Interfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.Vol.35, No.12B. L1658-L1661 (1996)
H.Suzuki:“金属有机气相外延生长的 ZnSe/MgS 超晶格异质界面的净化效应”Jpn.J.Appl.Phys.Vol.35,No.12B。
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K. Uesugi: "“Epitaxial Growth of Znicblende ZnSe/MgS Superlattices on (001)GaAs"" Appl. Phys. Lett.Vol.68 No.6. 844-846 (1996)
K. Uesugi:“(001)GaAs 上闪锌矿 ZnSe/MgS 超晶格的外延生长”,Appl.Vol.68 No.6 (1996)。
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K.Uesugi: "Initial Growth Processes of ZnSe onCleaned GaAs (001) Surfaces by Metal Organic Vapor Phase Epitaxy" Japan.J.Appl.Phys.Vol.35, No.8A. L1006-L1008 (1996)
K.Uesugi:“通过金属有机气相外延在清洁的 GaAs (001) 表面上进行 ZnSe 的初始生长过程”Japan.J.Appl.Phys.Vol.35,No.8A。
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    0
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K. Uesugi: ""Epitaxial Growth of Znicblends ZnSe/MgS Superlattices on (OOI) GaAs"" Appl. Phys. Lett.Vol. 68, No.6. 844-846 (1996)
K. Uesugi:“ZnSe/MgS 共混锌超晶格在 (OOI) GaAs 上的外延生长”应用。
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SUEMUNE Ikuo其他文献

SUEMUNE Ikuo的其他文献

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{{ truncateString('SUEMUNE Ikuo', 18)}}的其他基金

Study on Electron-photon Quantum-state Conversion in Quantum Dots Embedded in Meta Microcavities
超微腔中嵌入量子点的电子-光子量子态转换研究
  • 批准号:
    21246048
  • 财政年份:
    2009
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Single-Photon Generation and Detection and Its Conversion to Electron Spin States for Quantum Information Applications
用于量子信息应用的单光子生成和检测及其到电子自旋态的转换
  • 批准号:
    17068001
  • 财政年份:
    2005
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Study on coherent control of exciton states in quantum dots embeddedin pyramidal microcavities
金字塔形微腔量子点激子态相干控制研究
  • 批准号:
    16106005
  • 财政年份:
    2004
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (S)
Study of Large Purcell Effect in Three-dimensional microcavities
三维微腔大珀塞尔效应研究
  • 批准号:
    14350154
  • 财政年份:
    2002
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Control of Spontaneous Emission from Selectively Grown Semiconductor Photonic Dots
选择性生长半导体光子点自发发射的控制
  • 批准号:
    12450118
  • 财政年份:
    2000
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of AFM-SEM Coupled Lithography for Fabricating Nano Optical Devices
用于制造纳米光学器件的 AFM-SEM 耦合光刻技术的发展
  • 批准号:
    10555097
  • 财政年份:
    1998
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Fabrication of quantum dots with visible light emission and study of its stimulated emission
可见光发射量子点的制备及其受激发射研究
  • 批准号:
    09450119
  • 财政年份:
    1997
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Research on Blue Semiconductor Lasers Based on MOCVD
基于MOCVD的蓝光半导体激光器研究
  • 批准号:
    07555094
  • 财政年份:
    1995
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of High-Performance Blue Semiconductor Lasers Based on Localized Excitons
基于局域激子的高性能蓝光半导体激光器研究
  • 批准号:
    04402032
  • 财政年份:
    1992
  • 资助金额:
    $ 4.74万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)

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