Characterization and modeling of memory effects in switched GaN HEMT devices

开关 GaN HEMT 器件记忆效应的表征和建模

• 批准号: 440549658
• 负责人: Professor Dr.-Ing. Ingmar Kallfass
• 金额: --
• 依托单位: Fachgebiet Hochfrequenz- und Mikrowellentechnik - Ulrich-L.-Rohde Stiftungsprofessur
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/440549658?language=en
• 关键词: Characterization; modeling; memory; effects; switched

GaN-based transistors are increasingly used in power and microwave electronics, since this material system can operate at higher voltages and currents and achieve shorter switching times than commercial transistors in other material systems. What is new is that GaN HEMTs for these very different tasks have a conceptually identical structure, so that they should be described in the circuit design also by a uniform model. At the same time, the operating modes converge when the switching operations in switching converters have to be calculated with the same high accuracy as in analog circuits, and when analog microwave power amplifiers increasingly use the transistor as a switch. This development calls for a new, uniform approach to transistor modeling. The memory effects typical for GaN HEMTs pose a particular difficulty, as they significantly worsen the efficiency of switching converters and amplifiers.On the basis of solid preliminary work in the field of modelling microwave and power transistors for circuit design and physical simulation, this project aims to develop a uniform GaN HEMT model for the simulation of switched amplifiers, which can explain the influence of trapping effects on switching behavior based on physics.

GaN基晶体管越来越多地用于功率和微波电子器件，因为这种材料系统可以在更高的电压和电流下工作，并且比其他材料系统中的商业晶体管实现更短的开关时间。新的是，用于这些非常不同的任务的GaN HEMT具有概念上相同的结构，因此它们在电路设计中也应该通过统一的模型来描述。同时，当开关转换器中的开关操作必须以与模拟电路中相同的高精度计算时，以及当模拟微波功率放大器越来越多地使用晶体管作为开关时，操作模式收敛。这种发展要求一种新的，统一的方法来晶体管建模。GaN HEMT的典型记忆效应会显著降低开关转换器和放大器的效率，因此这是一个特别困难的问题。本项目在微波和功率晶体管电路设计和物理仿真建模领域扎实的前期工作基础上，旨在开发一个用于开关放大器仿真的统一GaN HEMT模型，这可以从物理上解释陷阱效应对开关行为的影响。