Low Power Logic Circuits by Energy Packet Transfer Method

在本课题中，我们首先研究了mosfet栅极的能量消耗下限。为了改进模型，我们在传统的渐近通道近似中引入了一个新项，该项考虑了侧向电场。基于该模型，我们编制了一个数值分析程序，并对SOI器件作为样品在超快速开关操作下进行了分析。结果表明，供给栅极的总能量中约有30%被器件实际消耗，其余能量可通过电荷循环概念在理论上回收。接下来，我们研究了两种能量填充传递电路；CR型和LCR型。前者由电容器和电阻组成；其中沿逻辑路径衰减的信号由感测放大器恢复。后者采用附加电感L，使能量传递效率更高。通过数值计算找出了两种电路的电路参数的最优条件。最后，我们提出并评估了一种新的能量传递电路方法，并指出了它的可能性和局限性。

In the present project we first studied on the lower bound of the energy consumed at the gate electrode of MOSFETs. Here we introduced a new term in the conventional gradual-channel approximation, which takes into account the lateral electric field in order to improve the model. Based on the new model we inplemented a numerical analysis program and analyzed SOI devices as samles under ultra-fast switching operation. Results showed that about 30% of the total energy supplied to the gate electrode is really consumed by the devices and the rest can be theoretically recovered by the charge recycle concept.Next we investigated two kinds of energy-packed transfer circuits ; CR type and LCR type. The former is composed of Capacitors and Resisters ; where signals attenuated along logic paths are restored by sense amplifiers. The latter uses additional inductors, L,so as to make the efficiency of energy transfer higher. We numerically found the optimal conditions of the circuit parameters for the both circuits.In conclusion, we proposed and evaluated new circuitry for energy transfer method and showed its possibility and limits.