Study of impurity states in II-VI semiconductor particles by local photon-emission spectroscopy
Study of impurity states in II-VI semiconductor particles by local photon-emission spectroscopy
批准号:
06640449
负责人:
NISHITANI Ryusuke
金额:
$1.34万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
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英文摘要
1.For the study of the local electronic structure of the surfaces and the microclusters, we have made a digital controlled UHV-STM which is able to record 2-dimensional map of the intensity of the photon emitted from the STM tunnel junction. An image of the photon map is recorded simultaneously with the measurements of a topography image by STM and the STS measurements. The spectral resolved photon-maps can also be obtained by using an optical band pass filter with the band width of about 50 nm and the center of the wave length of 700 and 650 nm. This apparatus is emplyed to observe the STM induced photon-maps for the film of the noble metal particles (Au and Ag) on the graphite surface. We have measured the photon images for various morphology of the film to investigate the correlation between the photon maps and the morphology of the films. We have observed that the photon map is dependent on the wave length of the collected light. We have found that the photon spectra is closely related with the geometry of the STM tip and the metal particles. The change in the spectral resolved photon map is explained in terms of the effect of the curvature radius of the STM tip on the photon spectra.2.We have studied the optical properties of the CdS microclustes. The microclustes of CdS microclusters in various sizes ranging from 1 to 2nm are prepared by precipitation technique.We have observed the size-dependnet absorption spectra for the CdS microclusters. The absorption edge for the CdS clusters increases in energy with the decrease in the cluster size. This observation is explained by the quantum size effect on the electronic levels of CdS microclustes.
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Yong Sun: "Study of Sputtering Mechanism of Silicon with Hydrogen Plasma Controlled by Magnetic Field" Jpn. J. Appl. Phys.33. L263-L266 (1994)
孙勇:《磁场控制氢等离子体溅射硅机理的研究》Jpn.
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Yong Sun: "Study of the Growth Mechanism of Narocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon" Jpn. J. Appl. Phys.33. L1645-L1648 (1994)
孙勇:“硅反应氢等离子体溅射制备纳米晶Si:H薄膜的生长机理研究”Jpn.
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西谷龍介: "ナノスケールトンネル発光像の測定:DSP制御STMの拡張" 固体物理. 31. 475-482 (1996)
Ryusuke Nishitani:“纳米级隧道发射图像的测量:DSP 控制的 STM 的扩展”固体物理 31. 475-482 (1996)。
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R.Nishitani: "Measurements of Photon Intensity Map in Nanometer Scale by STM : an extended application of DSP controlled STM" Solid State Physics. Vol.31, No.5. 475-482 (1996)
R.Nishitani:“通过 STM 测量纳米级光子强度图:DSP 控制的 STM 的扩展应用”固体物理。
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R.Nishitani: "Measurement of Photon Intensity Map for Metal Particles by STM" Materials Science and Engineering A. (1996)
R.Nishitani:“通过 STM 测量金属颗粒的光子强度图”材料科学与工程 A. (1996)
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共 11 条
Study of Plasmon-enhanced Photoelectron-excitaion in Nanosscale Cavity
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批准号:23540373
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.16万
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财政年份:2011
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负责人:NISHITANI Ryusuke
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依托单位:
Analysis of surface electronic structure by STM with resonance excitation
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批准号:13440099
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.51万
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财政年份:2001
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负责人:NISHITANI Ryusuke
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依托单位:
Construction of the apparatus for the local photoelectron spectroscopy
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批准号:09554015
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.0万
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财政年份:1997
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负责人:NISHITANI Ryusuke
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依托单位:
Local spectroscopy by spectrally resolved photon mapping of STM induced luminescnce from nanometer-size particles
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批准号:08454082
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.67万
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财政年份:1996
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负责人:NISHITANI Ryusuke
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依托单位:
STM Analysis of Growth Process and Electronic Properties of microcluster.
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批准号:02640248
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1990
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负责人:NISHITANI Ryusuke
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依托单位:
海外基金