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Synthesis of Diamond Film at Low Temperature and Its Apprications

金刚石薄膜的低温合成及其应用

基本信息

批准号：
06650028
负责人：
MUTSUKURA Nobuki
金额：
$ 1.22万
依托单位：
Tokyo Denki University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650028/
关键词：
Diamond Film Plasma CVD Rf Plasma Hard Carbon Film ダイヤモンド膜高周波プラズマCVD

项目摘要

In the mechanistic study on the hard carbon film deposition in pure CH4 rf plasma, it was suggested that chemical reactions of ions, accelerated by ion sheath potential, and CH_3 radicals, physisorbed on the substrate surface, determine the film deposition rate. This deposition model is also supported by the fact that the product of CH3 number density and total hydrocarbon ions density in tha plasma, describes well the film deposition rate.The film properties and the structure of the interface between deposited carbon film and Si substrate, were examined for the films deposited on both Si and Fe/Si substrates with several kinds of substrate temperatures. The film deposition rate greatly depends on the substrate temperature. It considerably decreases until 200 C,and then indicates the moderate decrease, when the substrate temperature is increased. At source gas pressures more than 60 mTorr, the film density dose not depends on the substrate temperature, but at the pressures less than 60 mTorr it increases with increasing the substrate temperature, and then reaches to 2.8 g/cm^3 at 400 C.In the film structure toward the depth, for the film deposited on Fe/Si substrate at 400 C,Fe_xCy thin film remains at top of the surface, and under this film a superhard rbon filn is deposited. The etching rate of this film in CF4 rf plasma is much lower (by about a order of magunitude) than that of normal hard carbon film. At the interface between tha carbon film and the Si substrate, a very thin diamond film exists.

在纯CH4射频等离子体中沉积硬碳膜的机理研究中，提出了离子鞘电势加速的离子与吸附在衬底表面的CH3自由基的化学反应决定了膜的沉积速率。等离子体中CH3数密度和总烃离子密度的乘积很好地描述了薄膜的沉积速率，这也支持了该沉积模型。研究了不同衬底温度下在Si和Fe/Si衬底上沉积的碳膜的性能和薄膜与Si衬底界面的结构。薄膜的沉积速率很大程度上取决于衬底温度。随着衬底温度的升高，薄膜的温度显著降低，直至200℃，然后呈现温和的下降趋势。在源气压大于60mTorr时，薄膜密度与衬底温度无关，但当气压低于60mTorr时，薄膜密度随衬底温度的升高而增大，在400C时达到2.8g/cm~3。在膜深向结构中，400℃下沉积在Fe/Si衬底上的薄膜，FexCy薄膜保持在表面的顶端，并在此薄膜下沉积了超硬碳膜。这种薄膜在CF4射频等离子体中的刻蚀速率比普通硬碳膜的刻蚀速率低得多(约一个数量级)。在碳膜和硅衬底之间的界面上，存在一层非常薄的金刚石膜。