Fundamental Study on The Collimation Sputtering

研究了准直溅射的基本现象。由于常规溅射中使用的钛靶不能用于准直溅射，因此本实验专门制备了不同基面的钛靶。对不同取向的钛靶，采用大纵横比一孔准直法测量了钛靶的角度分布。对这一分布也进行了模拟。结果表明，在基面最低的靶面上，垂直于靶板的束流强度最大。必须注意的是，在广泛用于常规溅射的高基面靶材中获得最低强度。这些实验表明，为了实现准直溅射，必须研制和使用专用靶材。对于这种溅射，低基面靶材是有希望的，而高度(220)取向的钛靶材是不可接受的。并对这些靶材沉积的钛膜进行了性能测试。这些薄膜表现出不同的钛颗粒取向和与硅衬底的不同硅化反应。这一结果适用于四分之一微米VLSI欧姆接触工艺。

Fundamental phenomena of collimation sputtering are studied. Since Ti target employing in conventional sputtering can not be used for the collimation sputtering, Ti target with different basal planes was prepared specifically for this experiment. Angular distribution of the Ti target was measured employing one hole collimation with high aspect ratio for Ti target with different orientations. Simulation was also performed for this distribution. These results indicated that largest beam intensity perpendicular to the target plate is attained in target with lowest basal plane. It must be noted that lowest intensity is obtained in the high basal plane target extensively employed for conventional sputtering. These experiments showed that specail target must be developed and employed for the collimation sputtering. Low basal plane target is promising for this sputtering and highly (220) oriented Ti target is not acceptable. Property of Ti film deposited from these target was also measured. These films showed different orientation of Ti grain and different silicidation reactions with Si substrate. This result is applicable to the quarter-micron VLSI ohmic contact process.