Fundamental Study on The Collimation Sputtering

准直溅射的基础研究

• 批准号: 06650371
• 负责人: HARA Tohru
• 金额: $ 1.15万
• 依托单位: Hosei University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650371/
• 关键词: Sputtering; Collimation; Beam distribution; Target; Ta; Conformality; Ohmic contact; メタル膜; ビーム角; コリメータ; チタン; マクシツ; カクドブンプ

Fundamental phenomena of collimation sputtering are studied. Since Ti target employing in conventional sputtering can not be used for the collimation sputtering, Ti target with different basal planes was prepared specifically for this experiment. Angular distribution of the Ti target was measured employing one hole collimation with high aspect ratio for Ti target with different orientations. Simulation was also performed for this distribution. These results indicated that largest beam intensity perpendicular to the target plate is attained in target with lowest basal plane. It must be noted that lowest intensity is obtained in the high basal plane target extensively employed for conventional sputtering. These experiments showed that specail target must be developed and employed for the collimation sputtering. Low basal plane target is promising for this sputtering and highly (220) oriented Ti target is not acceptable. Property of Ti film deposited from these target was also measured. These films showed different orientation of Ti grain and different silicidation reactions with Si substrate. This result is applicable to the quarter-micron VLSI ohmic contact process.

研究了准直溅射的基本现象。由于传统溅射中使用的钛靶不能用于准直溅射，因此本实验专门制备了不同基面的钛靶。采用高长径比单孔准直测量了不同取向钛靶的角分布。对该分布也进行了模拟。结果表明，在基面最低的目标处，垂直于靶板的光束强度最大。必须注意的是，在传统溅射中广泛使用的高基面靶中，获得的强度最低。这些实验表明，在准直溅射中必须研制和使用专用靶材。低基面靶是理想的溅射靶，而高（220）取向的钛靶则不理想。并测量了从这些靶上沉积的Ti薄膜的性能。这些薄膜表现出不同的Ti晶粒取向和与Si衬底的不同硅化反应。该结果适用于四分之一微米VLSI欧姆接触工艺。

项目成果

原 他: "Raman lmage Study of Flash-Lamp Annealing of lon-lmplanted Silicon" J of Appl. Phys.77. 3388-3392 (1995)

Hara 等人：“离子注入硅的闪光灯退火的拉曼图像研究”J of Appl.77 (1995)。

T.Hara: "Alloyed Schottky Barrier in GaAs MESFETs : TiAs/Ti2Ga3 Double layr" The Symp. on Wide Bandgap Semiconductors and Devices. Vol.95-21. 354-367

T.Hara：“GaAs MESFET 中的合金肖特基势垒：TiAs/Ti2Ga3 双层” Symp。

原: "Thermal Stability in Al/Ti/GaAs Schottky Barrier" Japan J. Appl. Phys. 34. 800-802 (1995)

原文：“Al/Ti/GaAs 肖特基势垒的热稳定性”Japan J. Appl. 34. 800-802 (1995)

原 他: "DCプラズマド-ピング法-高キャリア濃度p+層形成" 応用物理. 63. 1153-1154 (1994)

Hara 等人：“DC 等离子体掺杂方法 - 高载流子浓度 p+ 层形成”应用物理 63. 1153-1154 (1994)。

Mizoguchi, S.Nakajima and T.Hara: "Raman Image Study of Flash-Lamp Annealing of lon-lmplanted Silicon" J of Appl. Phys.77 (7), 1 April. 3388-3392 (1995)

Mizoguchi、S.Nakajima 和 T.Hara：“长注入硅闪光灯退火的拉曼图像研究”J of Appl。