Ion Implantation in Sillicides and Metals

硅化物和金属中的离子注入

• 批准号: 61460126
• 负责人: HARA Tohru
• 金额: $ 4.48万
• 依托单位: Hosei University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460126/
• 关键词: Silicide; Ion implantation; Gate; Interconnection; Ohmic contact; 不純物プロファイル; デンキョク; イオンチュウニュウ; フジュンブツブンプ

Ion imlantation in silicides and metals is an important process technology in MOS LSI's. Impurity concentration profiles of ion implantation in tungsten silicide with different compositions and metalS deposited by sputtering and chemical vapor diposition (CVD) were measured by Rutherford back scattering spectometry (RBS)and others.Impurity concentration profile in CVD tungsten silicide can be described by Gaussian distribution and profile tailing is not so evident. In sputtered W film, however, profile tailing occurs markedly. The tailing can be suprresed in CVD W film.when annealing of the ion implanted WSIx are performed. precipitation of the impurity ocurs rapidly together with excess Si from the Si rich silicide through the grain boundary of silicide.Out-diffusion of impurity takes place rapidly when capless annealing is done. Details of these impurity profiles are studied.

离子注入硅化物和金属是MOS大规模集成电路的重要工艺技术。用卢瑟福背散射法（RBS）等测量了溅射和化学气相沉积（CVD）沉积的不同成分和金属的硅化钨中离子注入杂质浓度的分布，CVD硅化钨中杂质浓度的分布可用高斯分布描述，分布拖尾不明显。而溅射W膜则出现明显的轮廓拖尾现象。对离子注入的WSIx进行退火处理，可以抑制CVD W膜中的拖尾现象。杂质与过量的硅一起从富硅硅化物中迅速析出，穿过硅化物的晶界，当进行无帽退火时，杂质迅速向外扩散。这些杂质配置文件的细节进行了研究。

项目成果

T. Hara;S. Kamiyama;T. Yokoyama: The 5th Symp. Ion Beam Tech. Hosei Univ. 1986 Dec.35-40 (1986)

T.哈拉；S.

原徹, 古川雅一: Semiconductor World, 1987年10月号. 78-81 (1987)

Toru Hara，Masakazu Furukawa：《半导体世界》，1987 年 10 月号 78-81（1987 年）。

H.Hayashida, S.Takahashi, A.Yamanoue, and T.Hara: "Barrier Effect of Sputtered WSix Inter-Layers in Aluminum Ohmic Contact System" The 5th Symp. Ion beam tech. Hosei Univ.29-34 (1986)

H.Hayashida、S.Takahashi、A.Yamanoue 和 T.Hara：“铝欧姆接触系统中溅射 WSix 中间层的势垒效应”第五 Symp。

T.Hara, H.Takahashi and Y.Ishizawa: "Composition of CVD Tungesten Silicides" J. Electrochem. Soc.134. 1302-1306 (1987)

T.Hara、H.Takahashi 和 Y.Ishizawa：“CVD 硅化钨的组成”J. Electrochem。

T.Hara, Y.Ishizawa, D,Hemmes and D.Rosler: "Enhanced High Temprature Stability of PECVD TiSix Due to Two-step Rapid Thrmal Annealing" Thin Solid Films.157. 1988 135-142

T.Hara、Y.Ishizawa、D、Hemmes 和 D.Rosler：“通过两步快速热退火增强 PECVD TiSix 的高温稳定性”固体薄膜。157。