Fundamental Research of the Delamination by H^+ Implantation

H^注入分层的基础研究

• 批准号: 08455151
• 负责人: HARA Tohru
• 金额: $ 0.45万
• 依托单位: Hosei Univ.
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455151/
• 关键词: Ion Implantation; H; Si; Sol; Delamination; Thin layr; はく離; LSI; ハクマク

Delamination of Stand Sic is studied in this project. Hydrogen ion is implanted at different energios and doses into Si. SiC and GaAs crystal it hasbeen studbee from these experiment that then lages is delaminated in Si at doses abore 5*10^<16> ions/cm^2. This condtion is cveakly dependent on energy. Thickness of the delaminetion canbe caried lireaoly with energy. This delamination, however, occurs at doses above 2*10^<17> ions/cm^2 in SiC and does not occur in GaAs.Delamination tenperature, Td, defined by occuring of the delamination, is oooc at 10min in Si. It decreases with the increasing of annealing time and reachos 400ﾟC in annealing for 120min.These ion implantation and annealing cenditions are usefal for the manufacture of advanced Solwater.

本课题主要研究了Sic支架的脱层问题。用不同能量和剂量的氢离子注入Si。SiC和GaAs晶体，在5 × 10 ~ 4<16>离子/cm ~ 2的剂量下，激光在Si中分层。这种情况与能量密切相关。分层厚度可随能量的增加而减小。在SiC中，当剂量大于2 × 10 ~（13）<17>ions/cm ~ 2时，发生分层，而在GaAs中则不发生分层。随着退火时间的增加，注入温度逐渐降低，在120分钟退火时，注入温度可达400 ℃左右。

项目成果

T. Hara, H. Tanaka: "TaSiN Barrier Layer for Oxygen Diffusion" Japan J. of Appl. Phys.36. 893-895 (1997)

T. Hara、H. Tanaka：“用于氧扩散的 TaSiN 阻挡层” Japan J. of Appl。

K.Sakiyama, T.Hara and T.Onda: "Arsenic Ion Implantation into SIMOX Layrs" J.Electrochem.Soc.Vol.143, No.3. 67-69 (1996)

K.Sakiyama、T.Hara 和 T.Onda：“砷离子注入 SIMOX Layrs”J.Electrochem.Soc.Vol.143，No.3。

T. Hara: "Proc Symp. on SOI" The Electorochem. Soc. NJ. U.S.A, 560 (1997)

T. Hara：“Proc Symp. on SOI”The Electorochem。

原 徹: "高エネルギーイオン注入および高ド-ズ水素イオン注入の応用" 電気学会誌. 118. 161-164 (1998)

Toru Hara：“高能离子注入和高剂量氢​​离子注入的应用”日本电气工程师学会杂志 118. 161-164 (1998)。

T. Hara, Y. Kakizaki: "Ion Implantation and Annealing conditons for" J of Electrochem. Soc.144. 78-81 (1997)

T. Hara、Y. Kakizaki：“离子注入和退火条件”J of Electrochem。