Fundamental Research of the Delamination by H^+ Implantation

本课题研究了林分碳化硅的分层。将不同能量和剂量的氢离子注入硅中。从这些实验中已经研究了SiC和GaAs晶体，然后在剂量大于5*10^<16 b>离子/cm^2的Si中分层。这个条件非常依赖于能量。脱层的厚度可以用能量来承载。然而，在SiC中，当剂量大于2 × 10^<17 b>离子/cm^2时，这种分层发生，而在GaAs中则不会发生。分层温度，Td，由分层的发生来定义，在Si中，10min时为0℃。随着退火时间的增加，其含量逐渐降低，退火120min时达到400oc。这些离子注入和退火条件对于制造先进的Solwater是有用的。

Delamination of Stand Sic is studied in this project. Hydrogen ion is implanted at different energios and doses into Si. SiC and GaAs crystal it hasbeen studbee from these experiment that then lages is delaminated in Si at doses abore 5*10^<16> ions/cm^2. This condtion is cveakly dependent on energy. Thickness of the delaminetion canbe caried lireaoly with energy. This delamination, however, occurs at doses above 2*10^<17> ions/cm^2 in SiC and does not occur in GaAs.Delamination tenperature, Td, defined by occuring of the delamination, is oooc at 10min in Si. It decreases with the increasing of annealing time and reachos 400ﾟC in annealing for 120min.These ion implantation and annealing cenditions are usefal for the manufacture of advanced Solwater.