Magnetic and electronic properties of graphene/MOFene superlattices
石墨烯/MOFene超晶格的磁和电子特性
基本信息
- 批准号:443405902
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Priority Programmes
- 财政年份:
- 资助国家:德国
- 起止时间:
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
In the first funding period we established the manufacturing of heterostructures (HS) made from vertical stacks of graphene and a crystalline two-dimensional polymer. We thoroughly characterized and understood its structure and electronic structure on ground of theory and experiment. We investigated in silico the corrugation of the HS presence and absence of typical substrates and the impact of the corrugation on the band structure. r In a 2DPI/graphene HS we were able to show strong intralayer charge transfer, enhancement of spectral features as well as first indications of a bandgap opening in graphene due to the interlayer interaction. Having established the general strategy to access the nanoscale electronic properties of such HS both theoretically and experimentally, we will focus on the more subtle magnetic interactions between 2D metal-organic frameworks, so-called MOFenes, and various graphene systems (graphene and gated Bernal-stacked bilayer graphene, gBLG) during the second funding period. These frameworks contain metal centers as nodal elements connected by organic ligands, and the metal centers carry charge and/or spin centers. MOFenes with a characteristic lattice thus will impose a charge/magnetic superlattice of the same structure on any interfaced 2D material, such as graphene or gBLG. In such HSs we will be able to investigate effects of lattice topology and different metal centers on the resulting magnetism of the HS. We will explore magnetic and electronic intralayer coupling in the MOFenes of honeycomb, kagome and rhombic lattice topology both experimentally and theoretically. This allows to tune the intra versus interlayer magnetic coupling and thus the resulting macroscopic magnetic properties. Most intriguingly, we will be able to investigate the impact of magnetism and intralayer spin-orbit coupling of the MOFene on the intricate correlated states we recently identified in gBLG near its tunable van-Hove singularity. A central goal of these investigations is the understanding of superlattice effects of different topology. While for all lattices ferromagnetic and antiferromagnetic ordering of the magnetic centers is possible, in the kagome lattice spin frustration should either should give ferromagnetic ordering or a spin liquid. As interactions can be tuned by the choice of magnetic centers and ligands, such intriguing 2D spin-liquid systems will become feasible. This proposal employs a rich range of experimental and theoretical methods, including advanced material transfer techniques, quantum transport, scanning near-field microscopy, nanoscale scanning spectroscopy, orthogonal tight-binding hamiltonians, density-functional theory (DFT), DFT based tight-binding, and quasiparticle methods.
在第一个资助期内,我们建立了由石墨烯和结晶二维聚合物的垂直堆叠制成的异质结构(HS)的制造。从理论和实验两个方面对其结构和电子结构进行了全面的表征和理解。 我们研究了在硅的HS的存在和不存在的典型的基板和带结构上的影响,的的电子。在2DPI/石墨烯HS中,我们能够显示出强的层内电荷转移、光谱特征的增强以及由于层间相互作用而导致的石墨烯中的带隙开口的第一指示。在建立了理论和实验上访问这种HS的纳米级电子特性的一般策略之后,我们将在第二个资助期内专注于2D金属有机框架(所谓的MOFenes)和各种石墨烯系统(石墨烯和门控Bernal堆叠双层石墨烯,gBLG)之间更微妙的磁性相互作用。这些骨架含有金属中心作为通过有机配体连接的节点元件,并且金属中心携带电荷和/或自旋中心。因此,具有特征晶格的MOFene将在任何界面2D材料(例如石墨烯或gBLG)上施加相同结构的电荷/磁性超晶格。在这样的HS中,我们将能够研究晶格拓扑结构和不同金属中心对HS磁性的影响。我们将从实验和理论两个方面探讨蜂窝状、可果美和菱形晶格拓扑结构的MOFenes中的磁性和电子层内耦合。这使得可以调整内部与层间的磁耦合,从而调整所得的宏观磁性。最有趣的是,我们将能够研究磁性和层内自旋-轨道耦合的MOFene对我们最近在gBLG中发现的可调van Hove奇点附近的复杂相关态的影响。这些研究的一个中心目标是理解不同拓扑结构的超晶格效应。虽然对于所有的晶格,磁中心的铁磁和反铁磁有序是可能的,但在戈薇晶格中,自旋阻挫应该要么给出铁磁有序,要么给出自旋液体。由于可以通过选择磁性中心和配体来调节相互作用,这种有趣的2D自旋液体系统将变得可行。该提案采用了丰富的实验和理论方法,包括先进的材料转移技术,量子输运,扫描近场显微镜,纳米扫描光谱,正交紧束缚哈密顿,密度泛函理论(DFT),基于DFT的紧束缚,准粒子方法。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Professor Dr. Xinliang Feng其他文献
Professor Dr. Xinliang Feng的其他文献
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{{ truncateString('Professor Dr. Xinliang Feng', 18)}}的其他基金
Exploring synthetic approaches to non-alternant ring topologies in graphene nanostructures
探索石墨烯纳米结构中非交替环拓扑的合成方法
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429265950 - 财政年份:2019
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426572620 - 财政年份:2019
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MXene–organic semiconductor blends for high-mobility printed organic electronic devices
用于高迁移率印刷有机电子器件的 MXeneâ 有机半导体混合物
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399684426 - 财政年份:2018
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391979941 - 财政年份:2018
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