Development of On-chip Nano-Scale Network Based on Communication Theory

硅片上的CMOSIC已经根据“扩展概念”进行了扩展，实现了高性能、低功耗和高功能。硅芯片已成为泛在网络中最重要的硬件。2013年，将在一个20 mm见方的芯片上使用35 nm工艺集成1亿个晶体管，工作频率预计将超过20 GHz。在这项工作中，信号的传播被认为只是一种通信，我们开发了全球布线技术。推导出了新的布线长度分布解析表达式，该模型很好地表达了实际130 nm和90 nm芯片的布线长度分布和累积互连数。我们开发了基于差分传输线的全球布线技术，在1 cm长的互连上成功实现了0.27pJ/bit的传输，并为未来的片上网络技术开发了多点传输线互连。此外，还提出了一种新的FOM(优点系数)来比较各种互连的性能：传统的RC线路、使用CNT(碳纳米管)的RC线路、本工作开发的传输线互连、光互连和无线互连。结果，传输线互连的FOM在几百微米到几毫米的范围内最优。这意味着传输线已经成为全球布线的最佳解决方案。

Si CMOS has been scaled according to the "Scaling Concept" and have achieved high performance, low power consumption, and high functionality. The Si CMOS has become the most important hardware in ubiquitous network. In 2013, hundred million transistors will be integrated on a one chip of 20mm square using 35nm technology and the operating frequency is expected to be over 20GHz. The Si CMOS is progressing toward Nano Scale era.In this work, the signal propagation is recognized to be just communication, and we have developed global wiring technology. The novel analytic expression has been derived for wire length distribution ; the wire length distribution and cumulative number of interconnects of real 130nm and 90nm CMOS chip are well expressed by our new model. We have developed global wiring technology based on differential transmission line ; 0.27pJ/bit transmission has been successfully achieved on 1cm long interconnect, and mutli drop transmission line interconnect has been also developed for future network on-chip technology. Furthermore, novel FoM (Figure of Merit) has been proposed to compare the performance of various interconnects ; the conventional RC line, the RC line using CNT (Carbon Nano Tube), transmission line interconnect which has been developed in this work, optical interconnect, and wireless interconnect. As a results, the FoM of the transmission line interconnect has most superior in the range of several hundred micron to several mm. This means the transmission line has been the best solution for global wiring.